Abstract: An optical module including a light source and an optical sensor is provided. The optical sensor includes a pixel matrix and an opaque layer. The pixel matrix includes a plurality of unblocked pixels, a plurality of first pixels and a plurality of second pixels. The opaque layer covers upon a first region, which is a part of each first pixel, and upon a second region, which is a part of each second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in a first direction, and uncovered regions of the first pixels and the second pixels are arranged to be larger at a pixel edge than at a pixel center.

Abstract: A fin-type field-effect transistor (FinFET) device includes a plurality of fins formed over a substrate. The semiconductor device further includes a dielectric layer filled in a space between each fin and over a first portion of the plurality of fins and a dielectric trench formed in the dielectric layer. The dielectric trench has a vertical profile. The semiconductor device further includes a second portion of the plurality of fins recessed and exposed in the dielectric trench. The second portion of the plurality of fins have a rounded-convex-shape top profile.

Abstract: An external neurostimulator includes a housing including a base housing and a top housing, a power source, a pulse generator, and a first and second series of spring-loaded pins electrically coupled to the pulse generator. The top housing includes a central portion, a first side door hingedly coupled to a first side of the central portion, and a second side door hingedly coupled to a second side of the central portion. Each of the first side door and the second side door include a channel formed thereon that is configured to directly receive a proximal end portion of an implantable lead. Each channel includes a series of longitudinally spaced-apart openings formed on the first side door and the second side door, respectively. The first and second series of spring-loaded pins extend through the series of longitudinally spaced-apart openings of the channel on the first and second side doors, respectively.

Abstract: In a method of patterning an integrated circuit, test layer thickness variation data is received when a test layer with a known thickness disposed over a test substrate undergoes tilted angle plasma etching. Overlay offset data per substrate locations caused by the tilted angle plasma etching is determined. The overlay offset data is determined based on the received thickness variation data. The overlay offset data is associated with an overlay between first circuit patterns of a first layer on the semiconductor substrate and corresponding second circuit patterns of a second layer disposed over the first layer on the substrate. A location of the substrate is adjusted based on the overlay offset data during a lithography operation to pattern a resist layer over the second layer. The second layer is patterned based on the projected layout patterns of the reticle and using the tilted angle plasma etching.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

Abstract: A method includes depositing a dielectric layer over a semiconductor substrate; forming a first photoresist layer over the dielectric layer; patterning the first photoresist layer to form through holes, such that a first portion of the first photoresist layer between a first one and a second one of the through holes has a less height than a second portion of the first photoresist layer between the first one and a third one of the through holes; forming a spacer on the first portion of the first photoresist layer; performing an etching process on the dielectric layer to form via holes while the spacer remains covering the first portion of the first photoresist layer; forming a plurality of metal vias in the via holes.

Abstract: A surgical navigation method includes selecting one or more two-dimensional images from a three-dimensional image. The method further includes adjusting a portion of the two-dimensional images along a viewing direction. The method also includes superimposing the portion of the two-dimensional images along the viewing direction to form a two-dimensional superimposed image. The method further incudes guiding movement of a virtual surgical instrument into the two-dimensional superimposed image.

Abstract: A method for evaluation of thin film non-uniform stress using high order wafer warpage, the steps including measuring a net wafer warpage across a wafer area due to thin film deposition, fitting a two dimensional low-order polynomial to the wafer warpage measurements and subtracting the low-order polynomial from the net wafer warpage across the wafer area.

Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

Abstract: A method for facilitating a flow from a sending end to a receiving end by multi-path transmission is introduced. The method is applied to a network controller of a software-defined network. The software-defined network includes a plurality of switches. The switches execute packet forwarding from the sending end to the receiving end. The method includes: executing, by the network controller, operations, so as for a flow from the sending end to reach the receiving end by multi-path transmission using a plurality of network paths, so as to enable the multi-path transmission to be transparent to the sending end and the receiving end. The network controller is, according to the method, configured to facilitate a transmission mechanism for multi-path stochastic switching or a transmission mechanism for multi-path stochastic switching with network coding, so as to enable multi-path transmission of the packets in one single flow and thus enhance transmission performance.

Abstract: In a method of patterning an integrated circuit, test layer thickness variation data is received when a test layer with a known thickness disposed over a test substrate undergoes tilted angle plasma etching. Overlay offset data per substrate locations caused by the tilted angle plasma etching is determined. The overlay offset data is determined based on the received thickness variation data. The overlay offset data is associated with an overlay between first circuit patterns of a first layer on the semiconductor substrate and corresponding second circuit patterns of a second layer disposed over the first layer on the substrate. A location of the substrate is adjusted based on the overlay offset data during a lithography operation to pattern a resist layer over the second layer. The second layer is patterned based on the projected layout patterns of the reticle and using the tilted angle plasma etching.

Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.

Abstract: A method includes forming a patterned etching mask, which includes a plurality of strips, and etching a semiconductor substrate underlying the patterned etching mask to form a first plurality of semiconductor fins and a second plurality of semiconductor fins. The patterned etching mask is used as an etching mask in the etching. The method further includes etching the second plurality of semiconductor fins without etching the first plurality of semiconductor fins. An isolation region is then formed, and the first plurality of semiconductor fins has top portions protruding higher than a top surface of the isolation region.

Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

Abstract: A method includes forming a patterned etching mask, which includes a plurality of strips, and etching a semiconductor substrate underlying the patterned etching mask to form a first plurality of semiconductor fins and a second plurality of semiconductor fins. The patterned etching mask is used as an etching mask in the etching. The method further includes etching the second plurality of semiconductor fins without etching the first plurality of semiconductor fins. An isolation region is then formed, and the first plurality of semiconductor fins has top portions protruding higher than a top surface of the isolation region.

Abstract: A method for registering a two-dimensional image data set with a three-dimensional image data set of a body of interest is discloses herein. The method includes the following steps: obtaining a first spatial parameter of a first registered virtual camera, wherein the first registered virtual camera is positioned corresponding to a first two-dimensional image of the two-dimensional image data set; and adjusting a second spatial parameter of the first unregistered virtual camera with the first spatial parameter of the first registered virtual camera, wherein the first unregistered virtual camera is failed to be positioned corresponding to the first two-dimensional image of the two-dimensional image data set.

Abstract: A method for registering a two-dimensional image data set of a body of interest with a three-dimensional image data set of the body of interest is discloses herein. The method includes the following steps: generating a first reconstructed image from the three-dimensional image data set with a first spatial parameter; calculating a reference similarity value according to the first reconstructed image and the two-dimensional image data set; generating a second reconstructed image from the three-dimensional image data set with a second spatial parameter; calculating a comparison similarity value according to the second reconstructed image and the two-dimensional image data set; comparing the comparison similarity value with the reference similarity value; and registering the two-dimensional image data set to the three-dimensional image data set if the comparison similarity value is not greater than the reference similarity value.

Abstract: A method for registering a two-dimensional image data set with a three-dimensional image data set of a body of interest is discloses herein. The method includes the following steps: adjusting a first virtual camera according to a distance parameter calculated corresponding to the two-dimensional image data set and the body of interest; rotating the first virtual camera according to an angle difference between a first vector and a second vector; and rotating the first virtual camera according to an angle which is corresponding to a maximum similarity value of a plurality of similarity values calculated in accordance with reconstructed images of the three-dimensional image data set which includes one generated by the first virtual camera and the others generated by other virtual cameras with different angles or different pixels from the one generated by the first virtual camera and the two-dimensional image data set.

Abstract: A method for registering a two-dimensional image data set with a three-dimensional image data set of a body of interest is discloses herein. The method includes the following steps: defining a first vector of a registered virtual camera in a coordinate system of the three-dimensional image data et; obtaining a first transformed vector of an unregistered virtual camera in the coordinate system of the three-dimensional image data set by transforming the first vector of the registered virtual camera through at least one transforming matrix; defining a focal point of the unregistered virtual camera at a reference point of the two-dimensional image data set in the coordinate system of the three-dimensional image data set; and repositioning the unregistered virtual camera according to the first transformed vector and the focal point of the unregistered virtual camera.