Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.

Abstract: A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop. A solder material comprises 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part (3a) of an electronic component (3) is connected to a copper-containing electrode land (1a) of a substrate (1) by using this solder material, a part (5b) having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound (5a) can be rapidly grown from the electrode land (1a) and the electrode part (3a) to form a strong blocking structure.

Abstract: A head slider for supporting a head over a magnetic disk in a hard disk drive, and a method of making the head slider are disclosed. The tail section of the head slider has a deep write hole that may improve the altitude performance of the head slider by minimizing fly height variations at high altitudes (i.e., altitudes above 3000 m) or in low atmospheric pressure environments. The write hole prevents the fly height from changing. Additionally, the write hole limits the amount of lubricant that will flow over the ABS.

Abstract: The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.

Abstract: The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.

Abstract: A layer (105) of a metal having a crystal lattice different from the crystal lattice of a joining material (106) mainly containing Bi is placed on a surface (102b) of a semiconductor device (102), and a layer (104) of an element having a positive value of heat of formation of a compound with the joining material (106) is placed between the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) and the surface (102b) of the semiconductor device (102), thereby preventing the component of the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) from being diffused in the semiconductor device (102).

Abstract: The method is capable of producing a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises the steps of: putting a seed crystal and a raw material in a crucible; setting the crucible in a cylindrical heater; heating the crucible; and producing temperature gradient in the cylindrical heater so as to sequentially crystallize a melt. The crucible is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible and that of the sapphire single crystal in a direction perpendicular to a growth axis thereof, from generating in the crucible and the sapphire single crystal, or which is capable of preventing deformation of the crucible without generating a crystal defect caused by the mutual stress in the sapphire single crystal.

Abstract: A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 ?m after the electronic element and the electrode are joined by the solder layer.

Abstract: Embodiments in accordance with the present invention relate to suppressing deterioration in rigidity and dynamic characteristics of a tab even when an initial point of contact between a tab and a ramp during unloading is set closer to the outer periphery of a disk. A data storage device in one embodiment of the present invention includes a head, a ramp for unloading the head, a load beam having a head support portion for supporting the head and a tab adapted to slide on a sliding surface of the ramp on a front end side with respect to the head support portion, and an actuator having the load beam and adapted to actuate the head for loading and unloading. During unloading, a portion of the tab offset from the center in the transverse direction of the tab first comes into contact with the sliding surface of the ramp. The load beam has a flange formed to be bent and continuously from the front end portion of the tab up to both ends of the head support portion.

Abstract: Male terminals 83 are respectively provided in terminal attachment portions 82 formed on a flange unit 7. Female terminals 84 and grommets 85 are provided for a harness 17. A seal lip portion 86 to be fitted into each of the terminal attachment portions 82 is formed on each of the grommets 85. In the cylindrical terminal attachment portions 82, the male terminals 83 are individually accommodated while being electrically insulated from each other. The terminal attachment portions 82 are arranged alternately in two rows so that a line segment obtained by connecting the respective centers of openings of the terminal attachment portions is a polygonal line. The openings 87 are arranged to form the Olympic symbol. At a fore-end of each of the terminal attachment portions 82, slits 89 are provided. Owing to the slits 89, the opening 87 is likely to be enlarged when the rubber grommet 85 is inserted therethrough. As a result, the placement of the rubber grommet 85 is facilitated.

Abstract: Fibers containing nano-sized diamond and platinum nanocolloid, and bedding formed thereby.

Abstract: Embodiments of the present invention help to effectively remove adhesion on a head slider. In an embodiment of the present invention, a hard disk controller/multiprocessing unit (HDC/MPU) raises the temperature on the surface of a head slider with a heating element on the head slider to remove adhesion on the head slider while an actuator stays on a ramp. The HDC/MPU varies the amount of heat in accordance with the temperature sensed by a temperature sensor. This achieves removal of the adhesion on the head slider, maintaining reliability.

Abstract: A bonding structure according to the present invention includes: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisted of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.

Abstract: A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.

Abstract: The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.

Abstract: Embodiments of the present invention help to effectively remove adhesion on a head slider. In an embodiment of the present invention, a hard disk controller/multiprocessing unit (HDC/MPU) raises the temperature on the surface of a head slider with a heating element on the head slider to remove adhesion on the head slider while an actuator stays on a ramp. The HDC/MPU varies the amount of heat in accordance with the temperature sensed by a temperature sensor. This achieves removal of the adhesion on the head slider, maintaining reliability.