Abstract: A developing apparatus has a substrate holder to hold a substrate, a heater which is provided in a substrate holder, and heats a substrate on a substrate holder for processing a resist film by PEB, a cooler to cool a substrate on a substrate holder, a developing solution nozzle to supply a developing solution to a substrate on a substrate holder, and a controller to control a heater, a cooler and a developing nozzle.

Abstract: A particulate water absorbent contains a water absorbent resin as a main component, the water absorbent resin being a crosslinked polymer of a water-soluble unsaturated monomer. The water absorbent resin is particular in shape and contains particles of a particle size in a range of not less than 106 ?m and less than 850 ?m in an amount of not less than 90 mass percent with respect to the total mass of the water absorbent resin contained in the particulate water absorbent. The particulate water absorbent has a first salt concentration absorption index of not less than 0.60 as measured by a formula below when ion exchange water is used as an aqueous solution of a constant salt concentration: (salt concentration absorption index)=(absorbency against a pressure of 4.83 kPa with respect to the aqueous solution of a constant salt concentration)/(absorbency against no pressure with respect to the aqueous solution of a constant salt concentration).

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: A heating device 1 includes a flat heating chamber 3 provided with a side opening. A substrate W is carried in a horizontal position through the side opening into the processing chamber 3, and is subjected to a heating process in the heating chamber 3. the heating chamber 3 is provided with heating plates 34 and 35 respectively provided with heating elements 34a and 35a, and a cooling mechanism 2 for cooling the heating plates 34 and 35. A controller 7 controls the cooling mechanism such that the heating plates 34 and 35 are cooled after the completion of the heating process for heating the substrate W and before a succeeding substrate W is carried into the heating chamber 3, and controls the heating elements 34a and 35a such that the heating plates 34 and 35 are heated at a processing temperature after the succeeding substrate has been carried into the heating chamber 3.

Abstract: A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

Abstract: A hot plate for heating a substrate placed on the hot plate. The hot plate comprises a silicon base having pin insertion holes through which support pins for supporting a substrate from below and elevating the substrate above the hot plate pass; a heater composed of a resistor made of a metal film deposited on the back surface of the silicon base; and a temperature sensor, composed of a resistor made of a metal film deposited on the back or front surface of the silicon base. The front surface of the silicon base has gap-making protrusions for making a gap between the hot plate and a substrate placed on the gap-making protrusions.

Abstract: A substrate heating apparatus for heating a substrate coated with a film of chemically amplified resist within a period after exposure and before development, having a mounting table to mount the substrate substantially horizontal with the resist-coated film faced up, a fluid supply mechanism for supplying glycerin to the substrate, and a heating mechanism for heating the substrate on a mounting table, in a state that glycerin contacts a resist-coated film, wherein the substrate on a mounting table is heated, in a state that glycerin contacts the resist-coated film.

Abstract: The particulate water absorbent has a cross-linking structure therein, and contains (i) a particulate water absorbent resin having a cross-linking structure on a surface therof and (ii) not less than 0.001 mass % and less than 10 mass % of anorganic acid multivalent metal salt whose molecule contains not less than seven carbon atoms. Futher, the particulate water absorbent contains 90 mass % of particles, whose particle diameter is not less than 106 ?m and 850 ?m, with respect to the particulate water absorbent.

Abstract: The present invention provides a method for being capable of sufficiently exerting property improvement effect by the addition of additive particles other than water-absorbing resin to water-absorbing resin particles. The problems can be solved by using additive particles having over cohesive particles in an amount equal to or less than a predetermined amount, or by using the additive particles by crushing or classifying in advance, before mixing with water-absorbing resin particles. Alternatively, the problem can be solved by subjecting a mixture of the water-absorbing resin particles and the additive particles to pneumatic transportation processing, in particular, in a heated state, after mixing or at the same time as mixing. Further, the present invention provides a water-absorbing resin composition, which is capable of stably exerting high-level property.

Abstract: A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Abstract: Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus.

Abstract: This invention provides a wafer-type temperature sensor capable of eliminating the need for an A/D converter, adapting itself to automation and improving the heat resistance to measure temperature distribution of the upper surface of a wafer, a temperature measuring device using the sensor, a thermal processor having a temperature measurement function and a temperature measurement method. The wafer-type temperature sensor comprises a wafer and a plurality of temperature sensors arranged in regions which are formed by segmenting the upper surface of the wafer into a plurality of regions. Each of the temperature sensors includes an oscillation circuit for oscillating a frequency signal corresponding to the temperature of its own region within a frequency band that is different for every region in response to input of power supply voltage.

Abstract: The present invention provides a particulate water absorbing agent for a thin type absorbing substrate suitable for actual use. A particulate water absorbing agent having irregularly pulverized shape, characterized by comprising, a surface crosslinked water-absorbing resin obtained by crosslinking polymerization of an unsaturated monomer with an acid group and/or salts thereof, which absorbing agent contains agglomerated particles therein and further satisfies (i) centrifuge retention capacity (CRC) in a physiological saline solution of not lower than 32 g/g, (ii) mass median particle size (D50) of 200 to 400 ?m, and (iii) particles smaller than 600 ?m and not smaller than 150 ?m of 95 to 100% by weight. By using the particulate water absorbing agent, such absorbing articles can be obtained as have few rugged surface after water absorption, excellent liquid permeation property.

Abstract: A thermal processing apparatus has a discharger for discharging process gas from a processing chamber and a ceiling plate provided between the substrate and the discharger. The ceiling plate has apertures at different aperture ratios in accordance with distances from the center of the ceiling plate. The apparatus may have dischargers provided over concentric circles of the substrate and adjusters for adjusting a discharging amount of the corresponding discharger. The apparatus may have gas suppliers provided over the concentric circles of the substrate and adjusters each for adjusting a supply amount of the corresponding supplier.

Abstract: A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Abstract: With respect to a substrate on which a resist solution is applied, the inplane uniformity of the quality of a resist film is improved in a heating processing carried out before exposure, and the yields of products are improved. A substrate on which a resist solution is applied is mounted on a heating plate in a processing vessel. Then, a purge gas is supplied into the processing vessel, and heating is started. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided. When the thickness becomes a predetermined value or less, a control part cause a lift pin to upwardly move so as to increase the distance between the substrate and the heating plate. Thus, the heating value applied to the substrate decreases, and thereafter, only the solvent is volatilized without having a bad influence on a polymer in the resist film.