Abstract: An adaptive optics system includes a spatial light modulator configured to spatially modulate a phase of an optical image incident on a modulation surface including N two-dimensionally arranged regions and a wavefront sensor including a lens array having N two-dimensionally arranged lenses corresponding to the N regions and an optical detection element for detecting a light intensity distribution including K converging spots formed by the lens array and configured to receive the optical image after the modulation from the spatial light modulator, wherein a correspondence relation between the region of the spatial light modulator and the converging spot formed in the wavefront sensor is specified.

Abstract: An adaptive optics system includes a spatial light modulator configured to spatially modulate a phase of an optical image incident on a modulation surface including N two-dimensionally arranged regions and a wavefront sensor including a lens array having N two-dimensionally arranged lenses corresponding to the N regions and an optical detection element for detecting a light intensity distribution including M converging spots formed by the lens array and configured to receive the optical image after the modulation from the spatial light modulator, and compensates for the wavefront distortion by controlling a phase pattern displayed in the spatial light modulator based on a wavefront shape of the optical image obtained from the light intensity distribution, wherein a correspondence relation between the region of the spatial light modulator and the converging spot formed in the wavefront sensor is specified while the compensation for the wavefront distortion is executed.

Abstract: An adaptive optics system includes a spatial light modulator configured to spatially modulate a phase of an optical image incident on a modulation surface and a wavefront sensor including a lens array having a plurality of two-dimensionally arranged lenses and an optical detection element for detecting a light intensity distribution including converging spots formed by the lens array and configured to receive the optical image after the modulation from the spatial light modulator, and compensates for wavefront distribution by controlling a phase pattern displayed in the spatial light modulator based on a wavefront shape of the optical image obtained from the light intensity distribution, wherein an amount of angular displacement between the modulation surface and the wavefront sensor is calculated.

Abstract: To provide a semiconductor device having improved characteristics. The semiconductor device has, over a substrate thereof, a first buffer layer (GaN), a second buffer layer (AlGaN), a channel layer, and a barrier layer, a trench penetrating through the barrier layer and reaching the middle of the channel layer, a gate electrode placed in the trench via a gate insulating film, and a source electrode and a drain electrode formed on both sides of the gate electrode respectively. By a coupling portion in a through-hole reaching the first buffer layer, the buffer layer and the source electrode are electrically coupled to each other. Due to a two-dimensional electron gas produced in the vicinity of the interface between these two buffer layers, the semiconductor device can have an increased threshold voltage and improved normally-off characteristics.

Abstract: The characteristics of a semiconductor device are improved. A semiconductor device is formed so as to have a channel layer formed over a substrate, a barrier layer, a trench penetrating through the barrier layer in an opening region, and reaching some point of the channel layer, a gate electrode arranged in the trench via a gate insulation film, and an insulation film formed over the barrier layer outside the opening region. Then, the insulation film has a lamination structure of a Si-rich silicon nitride film, and a N-rich silicon nitride film situated thereunder. Thus, the upper layer of the insulation film is set as the Si-rich silicon nitride film. This enables the improvement of the breakdown voltage, and further, enables the improvement of the etching resistance. Whereas, the lower layer of the insulation film is set as the N-rich silicon nitride film. This can suppress collapse.

Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0?z?1). The channel layer includes a composition of AlxGa1-xN (0?x?1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.

Abstract: A light modulating device (101A) comprises a reflective SLM (107) for modulating a laser beam (Lr) entering along a first optical path extending in a first direction; a dielectric multilayer film mirror (106), formed on a light transmitting member (105) transparent to illumination light (Li), for reflecting the laser beam (Lr) incident on a front face thereof from the reflective SLM (107) onto a second optical path extending in a second direction intersecting the first direction, and transmitting the illumination light (Li) incident on a rear face thereof onto the second optical path; and a light collecting lens (109) for receiving the illumination light (Li) and laser beam (Lr) from the dielectric multilayer film mirror (106) and converging the illumination light (Li) and laser beam (Lr).

Abstract: This HEMS (200) is provided with a control unit (230) that, if an operation directive does not go through a server (600) provided externally to a customer's home (10), identifies said operation directive as having come from within the customer's home, and if the operation directive does go through the server (600) provided externally to the customer's home (10), identifies the operation directive as having come from outside the customer's home.

Abstract: Information equipment 300 is controlled by a HEMS 200 and located in a consumer's facility 10. The information equipment 300 comprises a storage unit 300 configured to store a variable indicating a route type of an operational instruction on the information equipment 300.

Abstract: In an apparatus for modulating light, an spatial light modulator includes a plurality of pixels and configured to modulate input light in response to a drive voltage for each of the pixels. An input value setting unit is configured to set an input value for the each of pixels. The input value is a digital value, an entire gray level of the digital value is “N”, and “N” is a natural number. A converting unit is configured to convert the input value to a control value. A control value is a digital value, an entire gray level of the control value is “M”, and “M” is a natural number greater than “N”. A driving unit is configured to convert the control value to a voltage value and drive the each of the pixels in response to the drive voltage corresponding to the voltage value.

Abstract: An optical module (1A) includes a polarization beam splitter (10A), polarization elements (20 and 40) having nonreciprocal optical activity and respectively arranged on an optical path of a first polarization component (L2) transmitted through a light splitting surface (11) in irradiation light (L1) and an optical path of a second polarization component (L4) reflected in the light splitting surface (11), a first reflective SLM (30) that modulates and reflects a first polarization component (L2) passing through the first polarization element (20), and a second reflective SLM (50) that modulates and reflects the second polarization component (L4) passing through the second polarization element (40). First modulation light (L3) passing through the polarization element (20) again and then reflected by the light splitting surface (11) and second modulation light (L5) passing through the polarization element (40) again and then transmitted through the light splitting surface (11) are combined with each other.

Abstract: An optical module (1A) includes a polarization beam splitter (10A) having a light splitting surface (11), polarization elements (20, 40), and respectively arranged on an optical path of a first polarization component (L2) transmitted through the light splitting surface (11) and an optical path of a second polarization component (L4) reflected by the light splitting surface (11), a reflective SLM (30) that modulates and reflects the first polarization component (L2) passing through the polarization element (20), and a reflective SLM (50) that modulates and reflects the second polarization component (L4) passing through the polarization element (40). The first modulation light (L3) passing through the polarization element (20) again and then reflected by the light splitting surface (11) and the second modulation light (L5) passing through the polarization element (40) again and then transmitted through the light splitting surface (11) are combined with each other.

Abstract: A vehicle lamp includes: an LED mount on which an LED is placed; an attachment that fixes the LED to the LED mount; a power supply that supplies power to the LED; a first optical member that controls light emitted from the LED; and a second optical member that controls light emitted from the first optical member. The power supply and the first optical member are provided at the attachment.

Abstract: The reliability of a field effect transistor made of a nitride semiconductor material is improved. An ohmic electrode includes a plurality of unit electrodes isolated to be separated from each other. With this configuration, an on-state current can be prevented from flowing in the unit electrodes in a y-axial direction (negative direction). Further, in the respective unit electrodes, a current density of the on-state current flowing in the y-axial direction (negative direction) can be prevented from increasing. As a result, an electromigration resistance of the ohmic electrode can be improved.

Abstract: An optical module (1A) includes a polarization beam splitter (10) that receives input light (L1) including a p-polarization component using a light splitting surface (11), a first polarization element (20) that rotates a polarization plane of the input light (L1) transmitted through the light splitting surface (11), a first reflective SLM (30) that modulates the input light (L1) to generate first modulation light (L2), a second polarization element (40) that rotates a polarization plane of the first modulation light (L2) passing through the first polarization element (20) again and reflected by the light splitting surface (11), and a second reflective SLM (50) that modulates the first modulation light (L2) to generate second modulation light (L3). The second modulation light (L3) passes through the second polarization element (40) again, is transmitted through the light splitting surface (11), and then is output.

Abstract: Control system 100 comprises information equipment 300 located in a consumer's facility and a HEMS 200 controlling the information equipment 300 via a narrow area network 70. The HMES 200 includes a transmission unit 320 which repetitively transmits to the information equipment 300 an operational instruction of instructing an operation of the information equipment 300 until transmission of an instruction different from the operational instruction is determined.

Abstract: An image reading device includes an image reading section, an image processing section, and a density reference member. Based on a location of a defect in the image reading section or in the density reference member, the image processing section determines whether or not to at least partially restrict either a read range of the image reading section when the image reading section reads an original document or usage of a result obtained by reading the original document by the image reading section. The image processing section determines whether or not to apply a smoothing process to each density value detected by reading the original document by the image reading section. The determination is made based on a comparison between a normal-value determining threshold and each density value detected by reading the density reference member by the image reading section.

Abstract: A vehicle lamp includes a semiconductor light emitting device, a thermally conductive portion which is in contact with the semiconductor light emitting device, a heatsink which dissipates heat generated by the semiconductor light emitting device, and a housing in which the semiconductor light emitting device, the thermally conductive portion and the heatsink are accommodated. The heatsink includes a base and plate fins arranged at intervals to protrude from the base. Each of the plate fins includes a plate surface facing the plate surface of an adjacent one of the plate fins and upwardly extending in a direction along the base. A plane parallel to at least one of the plate surfaces of the plate fins may be oblique with respect to a vertical direction. An inner surface of the housing may be oblique with respect to the vertical direction in a region above the plate fins.

Abstract: In an automotive headlamp, a light-emitting module is configured such that a light-emitting element and a control circuit unit for controlling the lighting of the light-emitting element are structured integrally with each other. A control circuit unit in a position anterior to the light-emitting element in a lamp unit is located below a shade section so that the control circuit unit can be clear of the path of light used to form a low beam light distribution pattern of the light emitted by the light-emitting element. In this setting, the light-emitting element is so located that a main optical axis Ax2 is perpendicular respect to an optical axis Ax1 of the lamp unit and that a light-emitting portion of the light-emitting element protrudes higher than the control circuit unit in the direction of the main optical axis Ax2.

Abstract: A semiconductor device includes a first semiconductor layer, a second semiconductor layer formed over the first semiconductor layer, a gate insulating film contacting the second semiconductor layer, and a gate electrode facing the second semiconductor layer via the gate insulating film. The first semiconductor layer includes an Alx?1-xN layer (? includes Ga or In, and 0<x<1), and the second semiconductor layer includes an Aly?1-yN layer (0?y<1), in which y of the Aly?1-yN layer forming the second semiconductor layer increases at least in a region under the gate electrode as a position where y is measured approaches the first semiconductor layer.