Abstract: In an aspect, a battery assembly is adapted to accommodate a plurality of unit cells, the battery assembly has: a unit cell wiring configured to provide at least one connection for the unit cells; a cut-off device having a fuse circuit and a heater circuit, the fuse circuit configured to disconnect the connection by heat produced in the heater circuit; and a power supply wiring configured to supply the heater circuit of the cut-off device with an electric power.

Abstract: A mechanical structural component is a toothed component obtained by performing cold forging and carburizing treatment on a steel having a predetermined chemical composition, in prior austenite grains after the carburizing treatment, an area ratio of crystal grains of 50 ?m or less is 80% or more, and an area ratio of crystal grains exceeding 300 ?m is 10% or less, and a total helix deviation of teeth after the carburizing treatment satisfies Formula (1) (Bmax/L)×103?5??(1) where Bmax is a maximum total helix deviation in all teeth in mm, and L is a face width in mm.

Abstract: An elastic wave filter device includes a transmission elastic wave filter chip and a reception elastic wave filter chip. The transmission elastic wave filter chip includes an insulating support substrate, a piezoelectric layer directly or indirectly supported by the support substrate, and an IDT electrode in contact with the piezoelectric layer. The reception elastic wave filter chip includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The thermal conductivity of the support substrate is higher than the thermal conductivity of either of the piezoelectric layer and the piezoelectric substrate.

Abstract: A sensor for detecting damage to an object may include a housing, a first coating provided on a surface of a first end of the housing, and a second coating provided on a surface of a second end of the housing opposing the first end. The first coating may be configured to be exposed to an environment in which the object is placed, while the second coating may be configured to be hermitically sealed. The sensor may further include a plurality of electrodes placed in the housing connected to the first end and the second end so as to measure an electrical signal generated therebetween.

Abstract: Provided herein are various bathers and methods of making and using them. In some embodiments, the barriers include a porous crystalline charge-transfer complex and a filler.

Abstract: In a method of manufacturing a piezoelectric device, a compressive stress film is formed on a back surface of a piezoelectric single crystal substrate opposite to a surface on an ion-implanted side. The compressive stress film compresses the surface on the ion-implanted side of the piezoelectric single crystal substrate. The compressive stress produced by the compressive stress film is applied to half of the piezoelectric single crystal substrate on the ion-implanted side with respect to the center line of the thickness of the piezoelectric single crystal substrate to prevent the piezoelectric single crystal substrate from warping. A supporting substrate is then bonded to the surface of a bonding film on the flat piezoelectric single crystal substrate. The joined body of the piezoelectric single crystal substrate and the supporting substrate is then heated to initiate isolation at the ion-implanted portion as the isolation plane.

Abstract: In a method for manufacturing an electronic device, an ion implantation layer is formed at a desired depth from one principal surface of a piezoelectric single crystal substrate by implanting hydrogen ions into the piezoelectric single crystal substrate under desired conditions. The piezoelectric single crystal substrate in which the ion implantation layer has been formed is bonded to a supporting substrate, and a piezoelectric thin film is then formed by the application of heat using the ion implantation layer as a detaching interface. This heated detachment is performed at a reduced pressure less than atmospheric pressure and at a heating temperature determined in accordance with the reduced pressure.

Abstract: An ion implantation layer is formed in a piezoelectric single crystal substrate by implanting hydrogen ions. A lower electrode is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer is formed. A sacrificial layer is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer and the lower electrode are formed. The formation of the sacrificial layer is performed by direct formation thereof on the surface of the piezoelectric single crystal substrate, for example, by sputtering or coating. A support layer is formed on the piezoelectric single crystal substrate on which the sacrificial layer is formed, and after the surface of the support layer is planarized, a support base material is bonded thereto.

Abstract: Arrangements and methods for thermostatic packaging are provided herein. In some embodiments, in response to a change in temperature, an endothermic or exothermic reaction can be initiated to counteract the change in temperature.

Abstract: A piezoelectric device includes a piezoelectric thin film formed by separating and forming a piezoelectric single crystal substrate, an inorganic layer formed on a back surface of the piezoelectric thin film, an elastic body layer disposed on a surface opposite to the piezoelectric thin film of the inorganic layer, and a support pasted to a surface opposite to the inorganic layer of the elastic body layer. In a membrane structure portion, the inorganic layer and the elastic body layer are disposed on the piezoelectric thin film through a gap layer. The elastic body layer reduces a stress caused by pasting the piezoelectric thin film including the inorganic layer and the support and has a certain elastic modulus. The inorganic layer is formed with a material having an elastic modulus higher than that of the elastic body layer and suppresses damping caused by disposing the elastic body layer.

Abstract: Devices, implementations and techniques for measuring the environment impact of electronic devices, such as CO2 emission reduction by using alternative power sources for powering or charging electronic devices.

Abstract: The present invention provides a steel for nitrocarburizing having excellent mechanical workability before nitrocarburizing, and showing excellent fatigue properties after nitrocarburizing, which is suitable for applying in mechanical structural components for automobiles etc. prepared by adjusting the composition so that it contains in mass %, C: 0.01% or more and less than 0.10%, Si: 1.0% or less, Mn: 0.5% to 3.0%, P: 0.02% or less, S: 0.06% or less, Cr: 0.3% to 3.0%, Mo: 0.005% to 0.4%, V: 0.02% to 0.5%, Nb: 0.003% to 0.15%, Al: 0.005% to 0.2%, and Sb: 0.0005% to 0.02%, and the balance including Fe and incidental impurities, and setting the area ratio of bainite phase to the whole microstructure to more than 50%.

Abstract: A liquid crystal display device includes at least one engagement structure for fixing a bezel (10) to a chassis (40). The engagement structure includes a recessed portion (42) formed in a side surface (41) of the chassis and a pair of arms (50a, 50b) formed in a side wall (11) of the bezel. The pair of arms is each cantilevered and placed such that the fixed ends (51a, 51b) are positioned outward relative to the free ends (52a, 52b), respectively. The pair of arms can mutually support each other by being elastically deformed toward the chassis, and the free ends of the arms are at least partially fitted in the recessed portion of the chassis when the pair of arms is in the mutually supporting state, thus fixing the bezel to the chassis. Consequently, it is possible to reduce the width of the frame area and to automate the process of fixing the bezel.

Abstract: A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

Abstract: A piezoelectric device includes a piezoelectric thin film formed by separating and forming a piezoelectric single crystal substrate, an inorganic layer formed on a back surface of the piezoelectric thin film, an elastic body layer disposed on a surface opposite to the piezoelectric thin film of the inorganic layer, and a support pasted to a surface opposite to the inorganic layer of the elastic body layer. In a membrane structure portion, the inorganic layer and the elastic body layer are disposed on the piezoelectric thin film through a gap layer. The elastic body layer reduces a stress caused by pasting the piezoelectric thin film including the inorganic layer and the support and has a certain elastic modulus. The inorganic layer is formed with a material having an elastic modulus higher than that of the elastic body layer and suppresses damping caused by disposing the elastic body layer.

Abstract: An elastic wave filter device includes a transmission elastic wave filter chip and a reception elastic wave filter chip. The transmission elastic wave filter chip includes an insulating support substrate, a piezoelectric layer directly or indirectly supported by the support substrate, and an IDT electrode in contact with the piezoelectric layer. The reception elastic wave filter chip includes a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate. The thermal conductivity of the support substrate is higher than the thermal conductivity of either of the piezoelectric layer and the piezoelectric substrate.

Abstract: According to the present invention, it is possible to obtain steel for nitrocarburizing having a predetermined chemical composition, a bainite area ratio exceeding 50% and excellent machinability by cutting before nitrocarburizing, and having strength and toughness equivalent to conventional steel, such as SCr420 carburized steel material, and excellent fatigue properties after nitrocarburizing.

Abstract: A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He+ ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apart from a surface of the single-crystal base. In the separation step, the microcavities formed in the ion-implantation step are subjected to thermal stress to divide the separation layer of the piezoelectric single-crystal base, thereby detaching the single-crystal thin film.