Abstract: Provided is an illumination module capable of preventing a light exit surface from being darker along peripheral edge portions as though having borders. An illumination module (1) includes: a light guiding plate (20), which has an end surface (21) and a first principal surface (23); a light source (30) configured to emit light that enters the end surface (21); and a diffusion plate (50), which has alight incident surface (55) and a light exit surface (56). The diffusion plate (50) includes a protruding part (51), which protrudes toward the light guiding plate (20) side and the light source (30), which is positioned so as to face a peripheral edge portion (26) on the end surface (21) side of the light guiding plate (20), and which has a light incident surface (52) into which light exiting the peripheral edge portion (26) enters.

Abstract: A method for manufacturing an elastic wave device includes successively stacking conductive films on a piezoelectric substrate on which a pattern of a first resist has been formed, removing the first resist from the piezoelectric substrate on which the conductive films have been stacked; applying a second resist to the piezoelectric substrate from which the first resist has been removed and subjecting the second resist to exposure and development, thus forming a protective layer that protects a first region with the second resist, and etching the second conductive material in a state in which the first region is protected by the protective layer.

Abstract: A piezoelectric device includes a first piezoelectric substrate, a second piezoelectric substrate and an adhesive layer. First conductor patterns are provided on a front surface of the first piezoelectric substrate. A first piezoelectric element is defined by the first conductor patterns. Second conductor patterns are provided on a front surface of the second piezoelectric substrate. A second piezoelectric element is provided of these patterns. The adhesive layer adheres a rear surface of the first piezoelectric substrate and a rear surface of the second piezoelectric substrate to each other. The adhesive layer adheres the first and second substrates to each other such that a compressive stress is applied to the first and second piezoelectric substrates in a bonded state.

Abstract: Provided is a railway vehicle wheel that enables further reducing wear and fatigue damage of the wheel and rail in total. A railway vehicle wheel containing, in mass %: 0.65% to 0.84% of C; 0.1% to 1.5% of Si; 0.05% to 1.5% of Mn; 0.025% or less of P; 0.015% or less of S; 0.001% to 0.08% of Al; and 0.05% to 1.5% of Cr, the balance being Fe and incidental impurities, wherein a microstructure at least in a region extending from a tread to a depth of 15 mm is a pearlite structure, and a pearlite lamellar spacing at least in the region is 150 nm or less.

Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.

Abstract: A resonance circuit complex electronic component includes a first circuit element and a second circuit element defining a resonance circuit, an external connection terminal connected to outside, and a plurality of routing conductors connecting an external terminal of the first circuit element and an external terminal of the second circuit element to the external connection terminal, respectively. At least one of the plurality of routing conductors includes an inductor conductor extending in a direction not in parallel with a mounting surface.

Abstract: In a method for manufacturing a piezoelectric device while stably achieving strong bonding, a moisture-absorbing layer is formed on a bonding surface side of a piezoelectric single-crystal substrate. The moisture-absorbing layer is allowed to absorb moisture. A binder layer is formed on a bonding surface side of a supporting substrate. The moisture-absorbing layer is placed on the binder layer. A silica precursor in the binder layer is converted into silica through a hydrolysis reaction with moisture in the moisture-absorbing layer.

Abstract: A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.

Abstract: In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a ?C plane on a ?Z axis side of the piezoelectric thin film, the ?C plane on the ?Z axis side of the piezoelectric thin film is etched. Thus, ?Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the ?Z planes of the piezoelectric thin film in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film.

Abstract: Provided is an illumination module capable of preventing a light exit surface from being darker along peripheral edge portions as though having borders. An illumination module (1) includes: a light guiding plate (20), which has an end surface (21) and a first principal surface (23); a light source (30) configured to emit light that enters the end surface (21); and a diffusion plate (50), which has alight incident surface (55) and a light exit surface (56). The diffusion plate (50) includes a protruding part (51), which protrudes toward the light guiding plate (20) side and the light source (30), which is positioned so as to face a peripheral edge portion (26) on the end surface (21) side of the light guiding plate (20), and which has a light incident surface (52) into which light exiting the peripheral edge portion (26) enters.

Abstract: A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.

Abstract: In a method for manufacturing a piezoelectric device while stably achieving strong bonding, a moisture-absorbing layer is formed on a bonding surface side of a piezoelectric single-crystal substrate. The moisture-absorbing layer is allowed to absorb moisture. A binder layer is formed on a bonding surface side of a supporting substrate. The moisture-absorbing layer is placed on the binder layer. A silica precursor in the binder layer is converted into silica through a hydrolysis reaction with moisture in the moisture-absorbing layer.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: A position and time calculator, based on a navigation satellite signal, calculates a position of a navigation satellite and a position and a time where an antenna receives the navigation satellite signal. An upper limit error determiner evaluates an upper limit of error caused in positioning a reception position of the antenna based on an amount obtained by multiplying a difference between the time calculated based on the navigation satellite signal and the time measured by a time measurer by a coefficient determined based on arrangement of navigation satellites, and information on the position on the track stored in a memory. A position determiner corrects the moved distance measured by the speed measurer based on the evaluation of the upper limit of error in positioning, and determines the position of the antenna.

Abstract: A lower electrode and an adhesive layer made of an insulator are formed on a back surface on the ion implantation layer side of a piezoelectric single crystal substrate. A supporting substrate in which sacrificial layers made of a conductive material have been formed is bonded to the surface of the adhesive layer. By heating the composite body including the piezoelectric single crystal substrate, the lower electrode, the adhesive layer, and the supporting substrate, a layer of the piezoelectric single crystal substrate is detached to form a piezoelectric thin film. A liquid polarizing upper electrode is formed on a detaching interface of the piezoelectric thin film. A pulsed electric field is applied using the polarizing upper electrode and the sacrificial layers as counter electrodes. Consequently, the piezoelectric thin film is polarized.

Abstract: In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a ?C plane on a ?Z axis side of the piezoelectric thin film, the ?C plane on the ?Z axis side of the piezoelectric thin film is etched. Thus, ?Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the ?Z planes of the piezoelectric thin film in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film.

Abstract: A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

Abstract: An elastic wave filter device includes a transmission filter chip, a reception filter chip, and a mounting terminal. The transmission filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The reception filter chip includes a piezoelectric substrate and an IDT electrode provided on a principal surface of the piezoelectric substrate. The transmission filter chip and the reception filter chip are laminated to provide sealed spaces above the IDT electrodes. The mounting terminal is disposed on a side of the reception filter chip opposite to the transmission filter chip side. The elastic wave filter device is mounted such that the reception filter chip faces a mounting surface.

Abstract: A front-end circuit component includes a base-body elastic wave filter and a mounted electronic component. The base-body elastic wave filter includes a piezoelectric substrate and an IDT electrode on an upper surface of a piezoelectric substrate. The mounted electronic component is mounted above the piezoelectric substrate to define a sealed space in which the IDT electrode is disposed.

Abstract: In an aspect, a battery assembly is adapted to accommodate a plurality of unit cells, the battery assembly has: a unit cell wiring configured to provide at least one connection for the unit cells; a cut-off device having a fuse circuit and a heater circuit, the fuse circuit configured to disconnect the connection by heat produced in the heater circuit; and a power supply wiring configured to supply the heater circuit of the cut-off device with an electric power.