Abstract: A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

Abstract: An elastic wave device includes elastic wave elements, each including a piezoelectric layer directly or indirectly supported by a supporting substrate and an electrode disposed in contact with the piezoelectric layer, and a highly heat-conductive member stacked on a surface of the supporting substrate, opposite to the surface supporting the piezoelectric layer, in which the thermal conductivity of the supporting substrate is higher than the thermal conductivity of the piezoelectric layer, the coefficient of linear expansion of the supporting substrate is lower than the coefficient of linear expansion of the piezoelectric layer, the highly heat-conductive member has a larger area than the surface of the supporting substrate supporting the piezoelectric layer, and the thermal conductivity of the highly heat-conductive member is higher than that of the piezoelectric layer.

Abstract: A piezoelectric device includes a piezoelectric thin film formed by separating and forming a piezoelectric single crystal substrate, an inorganic layer formed on a back surface of the piezoelectric thin film, an elastic body layer disposed on a surface opposite to the piezoelectric thin film of the inorganic layer, and a support pasted to a surface opposite to the inorganic layer of the elastic body layer. In a membrane structure portion, the inorganic layer and the elastic body layer are disposed on the piezoelectric thin film through a gap layer. The elastic body layer reduces a stress caused by pasting the piezoelectric thin film including the inorganic layer and the support and has a certain elastic modulus. The inorganic layer is formed with a material having an elastic modulus higher than that of the elastic body layer and suppresses damping caused by disposing the elastic body layer.

Abstract: A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

Abstract: Provided herein are coded fibers. In some embodiments, informationally-encoded carbon fiber structures are provided. In some embodiments, methods of manufacturing and/or reading a coded fiber are provided.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a ?C plane on a ?Z axis side of the piezoelectric thin film, the ?C plane on the ?Z axis side of the piezoelectric thin film is etched. Thus, ?Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the ?Z planes of the piezoelectric thin film in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film.

Abstract: A method for manufacturing a composite substrate that prevents undesirable effects of etching a thin film includes a pattern forming step, an ion implanting step, a bonding step, and a separation step. In the pattern forming step, a pattern region and a reverse pattern region are formed on a principal surface of a functional material substrate. In the ion implanting step, by implanting ions into the functional material substrate, a separation layer is formed inside at a certain distance from the surface of each of the pattern region and the reverse pattern region. In the bonding step, the functional material substrate at the pattern region is bonded to a supporting substrate. In the separation step, the pattern region is separated from the functional material substrate, and the reverse pattern region is made to fall off.

Abstract: Provided is a polyacetal resin composition obtained from a raw material composition containing a polyacetal resin, a hydrazine derivative, and a compound for lowering the melting point of the hydrazine derivative, wherein a mixture of the hydrazine derivative and the compound satisfies both of the following conditions: T1<T2 and T1<T3, in which T1 is an apex temperature of an endothermic peak of the mixture having a maximum endothermic capacity by, with DSC, heating and cooling the mixture in accordance with a predetermined temperature program and then heating it at a predetermined rate until the mixture fuses; and T2 and T3 represent apex temperatures of endothermic peaks of the hydrazine derivative and the polyacetal resin having a maximum endothermic capacity, respectively by the similar treatment.

Abstract: In a method for manufacturing a piezoelectric device while stably achieving strong bonding, a moisture-absorbing layer is formed on a bonding surface side of a piezoelectric single-crystal substrate. The moisture-absorbing layer is allowed to absorb moisture. A binder layer is formed on a bonding surface side of a supporting substrate. The moisture-absorbing layer is placed on the binder layer. A silica precursor in the binder layer is converted into silica through a hydrolysis reaction with moisture in the moisture-absorbing layer.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.

Abstract: A wiring substrate with improved heat dissipation capability and with reduced size is disclosed. The wiring substrate includes a metal core substrate, a buffer layer formed so as to cover at least a part of the metal core substrate and containing a phase change material or a material with an electrocaloric effect, an electronic device mounted on a surface of a base including the metal core substrate and the buffer layer or inside the base, and a thermal via formed between the electronic device and the buffer layer.

Abstract: In a method for manufacturing a piezoelectric device, a silicon oxide film is deposited by sputtering on a surface of a single-crystal piezoelectric substrate closer to an ion-implanted region, and a silicon nitride film is deposited by sputtering on a surface of the dielectric film opposite to a side thereof closer to the single-crystal piezoelectric substrate. The silicon oxide film has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film to the piezoelectric thin film during heat treatment of a piezoelectric device. This prevents oxidation of the piezoelectric thin film and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film. As a result, a pyroelectric charge generated in the piezoelectric thin film can flow to the silicon oxide film.

Abstract: A resin composition including a resin and a hydrogen storage alloy powder. When hydrogen gas is absorbed-released in a hydrogen storage vessel obtained by filling the resin composition in the vessel such that a ratio V2/V1 between a volume V2 of the hydrogen storage alloy powder and an inner volume V1 of the vessel becomes 40 to 80 vol %, a distortion ? produced on a wall of the hydrogen storage vessel is 1,000×10?6 or less.

Abstract: In an aspect, a battery assembly is adapted to accommodate a plurality of unit cells, the battery assembly has: a unit cell wiring configured to provide at least one connection for the unit cells; a cut-off device having a fuse circuit and a heater circuit, the fuse circuit configured to disconnect the connection by heat produced in the heater circuit; and a power supply wiring configured to supply the heater circuit of the cut-off device with an electric power.

Abstract: A sensor for detecting damage to an object may include a housing, a first coating provided on a surface of a first end of the housing, and a second coating provided on a surface of a second end of the housing opposing the first end. The first coating may be configured to be exposed to an environment in which the object is placed, while the second coating may be configured to be hermitically sealed. The sensor may further include a plurality of electrodes placed in the housing connected to the first end and the second end so as to measure an electrical signal generated therebetween.

Abstract: The present disclosure generally relates to expandable electrodes and/or components that are expandable and/or flexible during, prior to, and/or after the manufacture of the electrodes.

Abstract: A code converting apparatus is designed to estimate the incoming time and the like of a signal modulated by a spreading sequence composed of m elements in a set A having n kinds of symbols as elements accurately. A symbol sequence memory section 102 stores a converted sequence of symbols obtained by concatenating consecutive 2d symbols at the center of each sequence pattern pi composed of 4d elements in the set A. The converted sequence of symbols is structured so that d symbol immediately preceding the 2d symbols and d symbol immediately following the 2d symbols are identical to d symbol immediately preceding corresponding 2d symbols and d symbol immediately following the corresponding 2d symbols of a corresponding sequence pattern. A symbol sequence specifying section 103 specifies a matching sequence pattern for every consecutive 2d symbols in a symbol sequence obtained by assigning a symbol to the signal in a coding cycle of the spreading sequence.

Abstract: Provided herein are coded fibers. In some embodiments, informationally-encoded carbon fiber structures are provided. In some embodiments, methods of manufacturing and/or reading a coded fiber are provided.