Abstract: To realize a chronograph timepiece in which a manufacture and an assembly of a chronograph mechanism are easy. A chronograph timepiece of the invention contains a main plate, a front train wheel and an escapement/speed control device, and possesses a base unit having at least one of a self-winding device or a hand winging device, and a chronograph unit containing a second display mechanism, a second chronograph train wheel, a minute chronograph train wheel, and an hour chronograph train wheel. The chronograph unit is disposed in a dial side than the base unit. The base unit contains a 1st transmission wheel, i.e., second wheel & pinion, and a 2nd transmission wheel, i.e., minute driving wheel & pinion, which are rotated on the basis of a rotation of a movement barrel complete.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: To realize a chronograph timepiece in which a number of levers constituting a coupling mechanism is small, a shape of the lever is simple and fabrication of the lever is facilitated. A chronograph timepiece of the invention includes a main plate, a surface train wheel, an escapement/speed control apparatus, at least one of an automatic winding apparatus and a hand winding apparatus, a second chronograph train wheel, a minute chronograph train wheel and an hour chronograph train wheel. The chronograph timepiece further includes a plurality of levers for coupling operation of the second chronograph train wheel and an hour/minute coupling lever for controlling to operate to rotate and stop the minute chronograph train wheel and the hour chronograph train wheel. The hour/minute coupling lever includes an hour clutch ring contract portion for making an hour chronograph wheel clutch ring ON/OFF and a minute clutch ring contact portion for making a minute chronograph wheel clutch ring ON/OFF.

Abstract: A plurality of optical members (lenses) for use in ultraviolet region are mutually stuck. A fluorine-based organic compound (for example, fluorine-based oil) is provided between them. The periphery of the optical members is sealed with a sealant. As the sealant, an adhesive fluorine resin, for example, a soluble fluorine resin is used.

Abstract: The Stirling cycle engine includes: a casing having a cylindrical shape; a cylinder for sidably inserting a displacer and a piston into a part adjacent to one end and another part adjacent to an other end thereof respectively,_the cylinder being coaxially placed inside the casing; a driving mechanism provided around an outer peripheral surface of the cylinder so as to force the piston to reciprocate inside the cylinder; a mount for fixing the driving mechanism to the outer peripheral surface of the cylinder, the mount being integrally formed with the cylinder; a flat spring having a center portion thereof connected to the piston; and a plurality of connecting arms, one ends thereof being integrally formed with the mount and the other ends thereof being connected to a peripheral portion of the flat spring.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

Abstract: To provide a timepiece with calendar including a date correcting mechanism capable of feeding a date indicator in a short period of time and capable of firmly correcting the date indicator without presence of a long dead point in correcting the date indicator by a simple mechanism. A timepiece with calendar according to the invention includes a date indicator including pieces of triangular teeth, a date indicator driving wheel for rotating the date indicator and a date indicator driving finger provided integrally with the date indicator driving wheel. The date indicator driving finger includes a central portion provided integrally with the date indicator driving wheel, a spring portion in a shape of a circular arc and a date indicator feeding portion provided at a front end of the spring portion. A date indicator setting portion of a date jumper includes a first setting portion, a second setting portion and a third setting portion.

Abstract: To provide a self-winding timepiece having a thin and small-sized movement in which a train wheel setting apparatus for setting a balance with hairspring is efficiently arranged at the movement. A self-winding timepiece includes a main plate, a time indicating wheel, a winding stem and a switching apparatus. A movement barrel complete is arranged on a top side of the main plate and arranged to overlap a main plate reference horizontal axis line between a first region and a fourth region. A balance with hairspring is arranged on the top side of the main plate and arranged to overlap the main plate reference horizontal axis line between a second region and a third region. The switching apparatus is arranged on a back side of the main plate. A train wheel setting apparatus includes a train wheel setting portion for setting the balance with hairspring by penetrating the main plate.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: To provide a mechanical chronograph timepiece in which an adjustment of a hammer position can be easily performed.

Abstract: To provide a power accumulation structure of a simple construction, in which a planetary mechanism is not used, for a timepiece using a spring as power. A power accumulation structure of a simple construction not using a planetary mechanism is a power accumulation structure using a threaded mechanism.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against either the semiconductor substrate or cladding layer and, alternately, the thickness of the quantum well layer is in excess of the critical thickness calculated after Matthews and Blakeslee.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: To provide a power accumulation structure of a simple construction, in which a planetary mechanism is not used, for a timepiece using a spring as power. A power accumulation structure of a simple construction not using a planetary mechanism is a power accumulation structure using a threaded mechanism.

Abstract: A light-emitting semiconductor device for producing red color optical radiation has a cladding layer of AlGaInPAs having a lattice constant between GaAs and GaP. Further, the laser diode uses an optical waveguide layer in the system of GaInPAs free from Al. The semiconductor device may be constructed on a GaPAs substrate.

Abstract: To provide a battery holding structure of an electronic timepiece having a simple constitution and being inexpensive, there is provided a battery frame (102) having an opening portion (113) for holding a battery (101), the battery frame (102) is provided with engaging portions (105 through 108) projected to a side of the opening portion (113) and having eaves portions (105a through 108a) provided with tapers and the battery (101) is inserted into the opening portion (113) and is held by the battery frame (102) and the eaves portions (103a through 109a)