Patents by Inventor Takayuki Goto

Takayuki Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10486263
    Abstract: Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes and insulating layers and are respectively exposed to front surfaces, including a bonding interlayer which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes, between the front surfaces.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: November 26, 2019
    Assignee: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD.
    Inventors: Jun Utsumi, Takayuki Goto, Takenori Suzuki, Kensuke Ide
  • Patent number: 10418542
    Abstract: A piezoelectric ceramic speaker includes a piezoelectric element using a vibration sheet formed with piezoelectric ceramic having a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains, wherein the primary phase is constituted by ceramic grains expressed by a composition formula Pb {(Zr(1-a)Tia)x·(Ni1/3Nb2/3)y·(Zn1/3Nb2/3)z}O3 (where 0<x?0.85, 0?y<1, 0<z<1, x+y+z=1, and 0.45?a?0.60); and an enclosure which encloses the piezoelectric element.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: September 17, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Gouki Watanabe, Takayuki Goto, Keiichi Hatano, Sumiaki Kishimoto, Yutaka Doshida
  • Publication number: 20190237656
    Abstract: A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction; first internal electrodes formed in the piezoelectric ceramic body and drawn to the first end surface; second internal electrodes formed in the piezoelectric ceramic body and drawn to the second end surface; a first terminal electrode formed on the first end surface; and a second terminal electrode formed on the second end surface, the first and second internal electrodes each having a width equal to a distance between the pair of side surfaces, at least one of the pair of side surfaces including a groove extending in non-parallel with the length direction.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Inventors: Takayuki GOTO, Hiroyuki SHIMIZU, Sumiaki KISHIMOTO, Yukihiro KONISHI
  • Publication number: 20190237653
    Abstract: A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape, having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction, and including first and second regions; first internal electrodes in the first region; second internal electrodes in the second region; third internal electrodes in the first and second regions; a first terminal electrode formed on the first end surface and electrically connected to the first internal electrodes; a second terminal electrode formed on the first end surface and electrically connected to the second internal electrodes; and a third terminal electrode formed on the second end surface and electrically connected to the third internal electrodes, the first, second, and third internal electrodes each having a width equal to a distance between the pair of side surfaces.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Inventors: Sumiaki KISHIMOTO, Hiroyuki SHIMIZU, Tomohiro HARADA, Takayuki GOTO, Yukihiro KONISHI
  • Publication number: 20190237652
    Abstract: A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape, having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction, and including first and second regions; first internal electrodes in the first region; second internal electrodes in the second region; third internal electrodes in the first and second regions; a first terminal electrode formed on the first end surface and electrically connected to the first internal electrodes; a second terminal electrode formed on the first end surface and electrically connected to the second internal electrodes; a third terminal electrode formed on the second end surface and electrically connected to the third internal electrodes; a first surface electrode formed on the upper surface; and a second surface electrode formed on the lower surface.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Inventors: Tomohiro HARADA, Takayuki GOTO, Hiroyuki SHIMIZU, Sumiaki KISHIMOTO
  • Publication number: 20190237657
    Abstract: A method of producing a multi-layer piezoelectric ceramic component includes: laminating ceramic green sheets to form a laminate, each of the ceramic green sheets being made of a piezoelectric ceramic material and including an electrically conductive pattern, the electrically conductive pattern including a base metal, being to be an internal electrode, and being formed on an inner side of an outer edge of the ceramic green sheet; sintering the laminate; and cutting the sintered laminate and causing the internal electrodes to be exposed.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Inventors: Tomohiro HARADA, Hiroyuki SHIMIZU, Takayuki GOTO, Sumiaki KISHIMOTO, Yukihiro KONISHI
  • Publication number: 20190180755
    Abstract: A voice recognition device comprising: a battery; a first voice recognition section which performs voice recognition; and a second voice recognition section which performs voice recognition and in which electric power consumption is higher than the first voice recognition section; wherein the second voice recognition section performs voice recognition when driving by electric power from an external power supply, and the first voice recognition section performs voice recognition when driving by electric power from the battery.
    Type: Application
    Filed: December 7, 2018
    Publication date: June 13, 2019
    Inventors: Takanori Shiozaki, Takayuki Goto
  • Publication number: 20190172813
    Abstract: Provided is a substrate bonding method for bonding a first substrate (11) and a second substrate (12) by sputter-etching, the substrate bonding method comprising: an activation step in which the surface of a first substrate (11) is irradiated with a beam (2) of ion particles of a gas (1) such as Ar and sputter-etched to thereby deposit sputtered particles (Ms) from the first substrate (11) on the surface of a second substrate (12), the first substrate (11) comprising at least one among a semiconductor material, a compound semiconductor material, and a metal material; and a bonding step in which the surface of the second substrate (12), on which the sputtered particles (Ms) from the first substrate (11) are deposited, and the surface of the substrate (11), which is sputter-etched, are overlapped and bonded with each other.
    Type: Application
    Filed: May 15, 2017
    Publication date: June 6, 2019
    Applicants: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Jun UTSUMI, Kensuke IDE, Takenori SUZUKI, Takayuki GOTO, Hideki TAKAGI, Yuuichi KURASHIMA
  • Patent number: 10269846
    Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: April 23, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Patent number: 10218924
    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: February 26, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe
  • Patent number: 10127328
    Abstract: The present invention provides a distribution device for web content capable of quickly distributing a multi-domain web page in response to a request from a client. A unit 1 acquires from a web server an html file A and related sub content B, C, D for a web page requested from a client, and then caches the html file A and related sub content B, C, D in a unit 2. A unit 3 edits each piece of content data B, C, D so that the client can obtain the html file A and each piece of content for the web page from the same domain. A unit 701 reads out the html file A that was cached in the unit 2 and distributes the html file A to the client. A unit 703 push-distributes each piece of content data B, C, D to the client.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: November 13, 2018
    Assignee: KDDI CORPORATION
    Inventors: Gen Mineki, Satoshi Uemura, Takayuki Goto
  • Patent number: 10112376
    Abstract: An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO2 substrates) are bonded at room-temperature to have practical bonding strength.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: October 30, 2018
    Assignees: MITSUBISHI HEAVY INDUSTRIES MACHINE TOOL, CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Jun Utsumi, Takayuki Goto, Kensuke Ide, Masahiro Funayama, Hideki Takagi
  • Publication number: 20180302579
    Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.
    Type: Application
    Filed: April 12, 2017
    Publication date: October 18, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Duli Mao, Hiroaki Ebihara, Kazufumi Watanabe
  • Patent number: 10103193
    Abstract: An apparatus and method for a low dark current floating diffusion is discussed. An example method includes coupling a photodiode to a floating diffusion through a transfer gate where a gate terminal of the transfer gate is provided a first voltage, resetting the floating diffusion, repetitively sampling image charge on the photodiode a plurality of times, where the sampled image charge is coupled to the floating diffusion, and where the gate terminal of the transfer gate is provided a second voltage less than the first voltage during each sampling of the image charge, while repetitively sampling the image charge, coupling an additional capacitance to the floating diffusion, where a first capacitance voltage is applied to the additional capacitance during the sampling, and performing correlated double sampling of the sampled image charge.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: October 16, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto
  • Patent number: 10062722
    Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: August 28, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Vincent Venezia, Boyd Albert Fowler, Eric A. G. Webster
  • Patent number: 10051212
    Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: August 14, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takayuki Goto, Hiroaki Ebihara, Rei Yoshikawa, Koichi Okamoto
  • Publication number: 20180151610
    Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 31, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Patent number: 9962793
    Abstract: The invention provides a method for producing a deposition mask that includes forming of an opening pattern 1 at a predetermined position in a resin film 2 by laser processing so as to penetrate therethrough. The method including the steps of: forming a meniscus of a liquid film 14 between the resin film 2 and a smooth surface 13b of a reference substrate 13 supporting the resin film 2; and after the resin film 2 and the reference substrate 13 are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern 1 by performing the laser processing. Accordingly, it is possible to increase the speed of the laser processing without generating a burr on an edge portion of the opening pattern.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: May 8, 2018
    Assignee: V TECHNOLOGY CO., LTD.
    Inventors: Syuji Kudo, Yoshikatsu Yanagawa, Takayuki Goto
  • Patent number: 9967504
    Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: May 8, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Gang Chen
  • Publication number: 20180097030
    Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Vincent Venezia, Boyd Albert Fowler, Eric A. G. Webster