Abstract: A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.

Abstract: A stage to be disposed in a chamber of a plasma processing apparatus is provided. The stage includes a chuck with a mounting portion for a substrate and a first hole through the mounting portion. The stage includes a base disposed beneath the chuck, the base including a second hole through the base, and the second hole communicating with the first hole. The base includes a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.

Abstract: A method for manufacturing a semiconductor device includes forming semiconductor devices from a semiconductor wafer and identifying a position of the semiconductor device in the semiconductor wafer, wherein the forming the semiconductor devices includes forming a first repeating pattern including i semiconductor devices each having a unique pattern, forming a second repeating pattern including j semiconductor devices each having a unique pattern, defining semiconductor devices on the semiconductor wafer such that each of the k semiconductor devices has a unique pattern based on the first and second repeating patterns, and grinding a backside of the semiconductor wafer, wherein each unique pattern of the k semiconductor devices is composed of a combination of the unique patterns of the first and second repeating patterns, wherein the position of the semiconductor device is identified based on the unique patterns of the first and second repeating patterns and an angle of a grinding mark.

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: A semiconductor device includes an aluminum layer, a passivation film, and a protective film arranged between the aluminum layer and the passivation film. A plurality of aluminum regions are formed in the aluminum layer. A width of a gap between the adjacent aluminum regions is equal to or less than twice a thickness of the protective film 140. The gap is filled with the protective film 140.

Abstract: A plasma processing apparatus includes a first mounting table on which a target object to be processed is mounted, a second mounting table provided around the first mounting table, and an elevation mechanism. A focus ring is mounted on the second mounting table. The second mounting table has therein a temperature control mechanism. The elevation mechanism is configured to vertically move the second mounting table.

Abstract: The present invention suppresses an increase in manufacturing cost and reduces switching noise. A field-effect transistor having a gate electrode embedded in a trench in an upper surface of a semiconductor substrate, a source region formed in the semiconductor substrate, and a drain region formed on a lower surface of the semiconductor substrate is provided with a gate wiring formed on the semiconductor substrate and being electrically connected to the gate electrode, a gate pad formed on the semiconductor substrate, a first resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned ON, a second resistor connected between the gate pad and the gate wiring and being configured to function when the field-effect transistor is turned OFF, and a rectifier diode included in the first resistor or the second resistor between the gate pad and the gate wiring.

Abstract: A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.

Abstract: A moisture-permeable waterproof fabric includes: a porous moisture-permeable waterproof membrane on at least one surface of a fabric. Polyurethane forming the moisture-permeable waterproof membrane is synthesized using a polyol including a polycarbonate diol having a plant-derived component.

Abstract: A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.

Abstract: A method for manufacturing a semiconductor device includes forming semiconductor devices from a semiconductor wafer and identifying a position of the semiconductor device in the semiconductor wafer, wherein the forming the semiconductor devices includes forming a first repeating pattern including i semiconductor devices each having a unique pattern, forming a second repeating pattern including j semiconductor devices each having a unique pattern, defining semiconductor devices on the semiconductor wafer such that each of the k semiconductor devices has a unique pattern based on the first and second repeating patterns, and grinding a backside of the semiconductor wafer, wherein each unique pattern of the k semiconductor devices is composed of a combination of the unique patterns of the first and second repeating patterns, wherein the position of the semiconductor device is identified based on the unique patterns of the first and second repeating patterns and an angle of a grinding mark.

Abstract: A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.

Abstract: The semiconductor device includes a first electrode, a second electrode electrically coupled to the first electrode, and a third electrodes electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Abstract: A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.

Abstract: A mounting apparatus for an object to be processed includes a mounting stage, on which an object to be processed is mounted inside a processing container, an edge ring disposed in a peripheral edge portion of the mounting stage, and a spring-like conductive member that includes a first spring-like member contacting the edge ring at a first recess formed in the edge ring, and a second spring-like member contacting the mounting stage at a second recess formed in the mounting stage.

Abstract: A support assembly includes an electrostatic chuck, a lower electrode, one or more conductive members and a ring-shaped insulating member. The lower electrode has a chuck support surface which supports the electrostatic chuck and a ring support surface which supports an edge ring and surrounds the chuck support surface. A contact electrode is formed on the ring support surface. The conductive members electrically connect the contact electrode and the edge ring. The insulating member is interposed between the ring support surface of the lower electrode and the edge ring while enclosing the conductive members.

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: Semiconductor device includes an element region in which the semiconductor element is provided, a semiconductor substrate including an outer peripheral region surrounding the element region, a plurality of semiconductor elements provided in an array-like in the element region. The element region includes a main circuit region in which the main circuit of semiconductor device is formed, and a sense circuit region in which a sense circuit for measuring the drain current flowing through the semiconductor element of the main circuit region is formed. Semiconductor element of the sense circuit region is surrounded by other semiconductor elements. Sense circuit region is covered with a main circuit source electrode which is connected to the semiconductor element of the main circuit region.