Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: Semiconductor device includes an element region in which the semiconductor element is provided, a semiconductor substrate including an outer peripheral region surrounding the element region, a plurality of semiconductor elements provided in an array-like in the element region. The element region includes a main circuit region in which the main circuit of semiconductor device is formed, and a sense circuit region in which a sense circuit for measuring the drain current flowing through the semiconductor element of the main circuit region is formed. Semiconductor element of the sense circuit region is surrounded by other semiconductor elements. Sense circuit region is covered with a main circuit source electrode which is connected to the semiconductor element of the main circuit region.

Abstract: A substrate support assembly on which a substrate is placed, includes a base, an electrostatic chuck disposed on the base, and an edge ring disposed in a periphery of the substrate. The edge ring is formed of a plurality of edge ring pieces that are segmented in a circumferential direction. The electrostatic chuck includes a substrate attraction part configured to attract the substrate, and an edge ring attraction part configured to attract the plurality of edge ring pieces. The edge ring attraction part includes a plurality of heat transfer gas grooves, supplied with a heat transfer gas, in a plurality of regions where the plurality of edge ring pieces are attracted, respectively.

Abstract: The semiconductor device includes a first electrode, a second electrode electrically coupled to the first electrode, and a third electrodes electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: A stage to be disposed in a chamber of a plasma processing apparatus is provided. The stage includes a chuck with a mounting portion for a substrate and a first hole through the mounting portion. The stage includes a base disposed beneath the chuck, the base including a second hole through the base, and the second hole communicating with the first hole. The base includes a first cylindrical liner disposed in the second hole, the first cylindrical liner having a relative permittivity of 5 or less.

Abstract: In a substrate support according to one exemplary embodiment, an adhesive is provided between an upper surface of a base and a lower surface of the electrostatic chuck. The base, the adhesive, and the electrostatic chuck provide a supply path for supplying a heat transfer gas between the electrostatic chuck and a substrate. The upper surface of the base defines one or more grooves. The one or more grooves are further away from a center of the upper surface than the supply path. The adhesive is provided to cover an upper end opening of each of the one or more grooves. The heat transfer gas is capable of being supplied to the one or more grooves via the supply path or a different flow path. The substrate support further includes a pressure sensor to measure pressure in the one or more grooves.

Abstract: An air cylinder includes a cylinder, a piston rod, a piston, and a controller. The piston rod has one end disposed in the cylinder and the other end protruding from the cylinder. The piston is provided at the one end of the piston rod and moves the piston rod by moving in the cylinder. The controller supplies gas into one of a space, which is a space in the cylinder directed on the piston rod side with respect to the piston, and a space, which is a space in the cylinder opposite to the space with respect to the piston, and sucks gas from an interior of the other of the spaces.

Abstract: A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.

Abstract: A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.

Abstract: In a substrate support according to one exemplary embodiment, an adhesive is provided between an upper surface of a base and a lower surface of the electrostatic chuck. The base, the adhesive, and the electrostatic chuck provide a supply path for supplying a heat transfer gas between the electrostatic chuck and a substrate. The upper surface of the base defines one or more grooves. The one or more grooves are further away from a center of the upper surface than the supply path. The adhesive is provided to cover an upper end opening of each of the one or more grooves. The heat transfer gas is capable of being supplied to the one or more grooves via the supply path or a different flow path. The substrate support further includes a pressure sensor to measure pressure in the one or more grooves.

Abstract: A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.

Abstract: A camera module includes a substrate having a first main surface mounted with an image sensor, a second main surface on the reverse side of the substrate from the first main surface in the predetermined direction, and is provided with at least one hole extending from the first main surface in the predetermined direction. The camera module further includes a holder which has a boss inserted from the first main surface into the at least one hole, and holds at least one lens. The camera module further includes a fixing part made of adhesive that is cured into an anchor shape. The fixing part fixes the boss inside the at least one hole.

Abstract: A processing container includes a processing container including a placement table configured to place a workpiece thereon and a gas supply source configured to supply a processing gas; a plurality of exhaust mechanisms provided around the placement table and configured to control an exhaust amount of the processing gas; a plurality of sensors configured to detect pressure at a plurality of positions distributed within the processing container; and a controller configured to control exhaust amounts of the plurality of exhaust mechanisms based on a result of pressure detection by the plurality of sensors so as to suppress unevenness in a pressure of the processing gas supplied to the workpiece.

Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a sequential stack of a buffer layer, a channel layer, and a barrier layer, and includes a mesa part including a fourth nitride semiconductor layer formed over the stack, and a side part formed on both sides of the mesa part and including a thin film part of the fourth nitride semiconductor layer. Generation of 2DEG is suppressed below the mesa part while being unsuppressed below the side part. In this way, the side part that disables the 2DEG suppression effect is provided on an end portion of the mesa part, thereby a distance from an end portion of the side part to the gate electrode is increased, making it possible to suppress leakage caused by a current path passing through an undesired channel formed between a gate insulating film and the mesa part.

Abstract: A high-electron-mobility transistor has a buffer layer, a channel layer, a barrier layer, a mesa-shaped cap layer, a source electrode formed on one side of the cap layer, a drain electrode formed on the other side, and a gate electrode formed over the cap layer via a gate insulating film. The semiconductor device has an element isolation region defining an active region in which the semiconductor device is provided. The gate electrode extends from over the active region to the over the element isolation region. In plan view, the active region has a projection part projected to the direction of the element isolation region in a region overlapped with the gate electrode. By providing the active region with a projection part, the channel length of a parasitic transistor can be increased, and turn-on of the parasitic transistor can be suppressed.

Abstract: A plasma processing apparatus includes an insertion member having a first surface facing a vacuum space, a second surface facing a non-vacuum space, and an insertion hole penetrating through the first and second surfaces. A pin is inserted into the insertion hole and moved vertically. A movable member is provided in a recess formed on a wall surface of the insertion hole facing the pin. The movable member has an opening into which the pin is inserted and is movable along a surface of the recess. A first sealing member is provided between the movable member and the pin. A second sealing member is provided between the movable body and the surface of the recess and allows, when a pressing force of the pin that locally compresses the first sealing member acts on the first sealing member, the movable member to move in a direction to release the pressing force.

Abstract: A mounting apparatus for an object to be processed includes a mounting stage, on which an object to be processed is mounted inside a processing container, an edge ring disposed in a peripheral edge portion of the mounting stage, and a spring-like conductive member that includes a first spring-like member contacting the edge ring at a first recess formed in the edge ring, and a second spring-like member contacting the mounting stage at a second recess formed in the mounting stage.

Abstract: There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.

Abstract: A support assembly includes an electrostatic chuck, a lower electrode, one or more conductive members and a ring-shaped insulating member. The lower electrode has a chuck support surface which supports the electrostatic chuck and a ring support surface which supports an edge ring and surrounds the chuck support surface. A contact electrode is formed on the ring support surface. The conductive members electrically connect the contact electrode and the edge ring. The insulating member is interposed between the ring support surface of the lower electrode and the edge ring while enclosing the conductive members.