Abstract: An air cylinder includes a cylinder, a piston rod, a piston, and a controller. The piston rod has one end disposed in the cylinder and the other end protruding from the cylinder. The piston is provided at the one end of the piston rod and moves the piston rod by moving in the cylinder. The controller supplies gas into one of a space, which is a space in the cylinder directed on the piston rod side with respect to the piston, and a space, which is a space in the cylinder opposite to the space with respect to the piston, and sucks gas from an interior of the other of the spaces.

Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a sequential stack of a buffer layer, a channel layer, and a barrier layer, and includes a mesa part including a fourth nitride semiconductor layer formed over the stack, and a side part formed on both sides of the mesa part and including a thin film part of the fourth nitride semiconductor layer. Generation of 2DEG is suppressed below the mesa part while being unsuppressed below the side part. In this way, the side part that disables the 2DEG suppression effect is provided on an end portion of the mesa part, thereby a distance from an end portion of the side part to the gate electrode is increased, making it possible to suppress leakage caused by a current path passing through an undesired channel formed between a gate insulating film and the mesa part.

Abstract: A high side transistor is coupled between a high potential side power source node and an intermediate node, and a recirculation diode is coupled between a low potential side power source node and the intermediate node, thereby forming a recirculation path when the high side transistor is OFF. A power source supply line couples the high potential side power source node with one end of the high side transistor. A surge recirculation device causes a current to flow in one direction, and a surge recirculation line couples the one end of the high side transistor to the high potential side power source node through the surge recirculation device, and causes a surge generated at the one end of the high side transistor to recirculate toward the high potential side power source node.

Abstract: A plasma processing apparatus includes a first mounting table on which a target object to be processed is mounted, a second mounting table provided around the first mounting table, and an elevation mechanism. A focus ring is mounted on the second mounting table. The second mounting table has therein a temperature control mechanism. The elevation mechanism is configured to vertically move the second mounting table.

Abstract: A high-electron-mobility transistor has a buffer layer, a channel layer, a barrier layer, a mesa-shaped cap layer, a source electrode formed on one side of the cap layer, a drain electrode formed on the other side, and a gate electrode formed over the cap layer via a gate insulating film. The semiconductor device has an element isolation region defining an active region in which the semiconductor device is provided. The gate electrode extends from over the active region to the over the element isolation region. In plan view, the active region has a projection part projected to the direction of the element isolation region in a region overlapped with the gate electrode. By providing the active region with a projection part, the channel length of a parasitic transistor can be increased, and turn-on of the parasitic transistor can be suppressed.

Abstract: A camera module includes a substrate having a first main surface mounted with an image sensor, a second main surface on the reverse side of the substrate from the first main surface in the predetermined direction, and is provided with at least one hole extending from the first main surface in the predetermined direction. The camera module further includes a holder which has a boss inserted from the first main surface into the at least one hole, and holds at least one lens. The camera module further includes a fixing part made of adhesive that is cured into an anchor shape. The fixing part fixes the boss inside the at least one hole.

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Abstract: Disclosed is a plasma processing apparatus including: a first placing table including a placing surface configured to place thereon a workpiece serving as a plasma processing target, an outer peripheral surface, a heater provided on the placing surface, a power supply terminal provided on a back surface side opposite to the placing table, and a wiring provided on the outer peripheral surface so as to be enclosed in an insulator, the wiring being configured to connect the heater and the power supply terminal; and a second placing table provided along the outer peripheral surface of the first placing table and configured to place a focus ring thereon.

Abstract: Non-uniformity of temperature of a focus ring can be improved by reducing holes which hamper a heat transfer from the focus ring to a base. A mounting table includes the base configured to place a processing target object thereon; the focus ring provided on the base to surround a region on which the processing target object is placed; a connecting member provided with a through hole and configured to connect the base to a member provided below the base by being inserted into an insertion hole formed at a region of the base which corresponds to a lower portion of the focus ring; and a lifter pin provided at the base such that the lifter pin is allowed to be protruded from the insertion hole by being inserted into the through hole of the connecting member, and configured to raise the focus ring by being protruded from the insertion hole.

Abstract: A high side transistor is coupled between a high potential side power source node and an intermediate node, and a recirculation diode is coupled between a low potential side power source node and the intermediate node, thereby forming a recirculation path when the high side transistor is OFF. A power source supply line couples the high potential side power source node with one end of the high side transistor. A surge recirculation device causes a current to flow in one direction, and a surge recirculation line couples the one end of the high side transistor to the high potential side power source node through the surge recirculation device, and causes a surge generated at the one end of the high side transistor to recirculate toward the high potential side power source node.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

Abstract: A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

Abstract: A semiconductor device includes a semiconductor substrate and an electrical fuse formed on the semiconductor substrate, and including a first conductor and a second conductor electrically separated from the first conductor. In a state of the electrical fuse after a cutting processing, the first conductor is cut and separated into a first part electrically separated from the second conductor and a second part including a flowing region from which a material constituting the first conductor flows outward and which is electrically connected to the second conductor.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.