Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: A method for producing a polyethylene-based resin laminated foam sheet according to the present invention is a method for producing a polyethylene-based resin laminated foam sheet 1 with thickness of 0.05 to 0.5 mm in which an anti-static layer is adhered by lamination on at least one surface of the foam layer, including: a step of performing coextrusion and foaming of a laminate which is obtained by combining and laminating, in a die 10, a melt resin composition 6 for forming a foam layer obtained by kneading a low density polyethylene A and a physical foaming agent and a melt resin composition 9 for forming an anti-static layer obtained by kneading a low density polyethylene B and an anti-static agent, wherein the anti-static agent is a polymeric anti-static agent C which has a melting point to allow a melting point difference in the range of from ?10° C. to +10° C. compared to that of the low density polyethylene B and has a melt flow rate of 10 g/10 minutes or more.

Abstract: To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell.

Abstract: A recording apparatus includes a placement unit on which sheets of paper are placed, a feeder that feeds a sheet, thrust mechanisms that push up the placement unit toward the feeder, and an edge guide. Each of the thrust mechanisms includes a coil spring that imparts an urging force to the placement unit, one case that is mounted on the placement unit and receives the coil spring from one end thereof and accommodates the coil spring, and another case that is disposed so as to partially overlap the one case and receives the coil spring from the other end thereof and accommodates the coil spring. The one case and the other case are configured to be movable relative to each other in the urging direction of the coil spring and to be rotatable together in the circumferential direction.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: An object is to provide a semiconductor device that automatically adjusts the luminance of a display device. The semiconductor device includes an illuminometer, a threshold detector, a timing controller, a digital-to-analog converter circuit, a first display panel, and a second display panel. The illuminance of external light is measured with the illuminometer, and the threshold value of digital video data is determined by the threshold detector in accordance with the illuminance. The timing controller generates a signal for the first display panel or a signal for the second display panel on the basis of the threshold value and video data transmitted from the outside. The signal for the first display panel and the signal for the second display panel are input to one digital-to-analog converter circuit and converted into digital signals, and the obtained digital signals are input to a corresponding one of the first display panel and the second display panel.

Abstract: A digital to analog conversion circuit is disclosed. In one example, the conversion circuit includes a selector unit and a differential amplifier. The selector unit includes a selector unit that selects nodes from a voltage dividing circuit based upon bit information of a higher order side of an input digital signal and outputs voltages of the selected nodes. The differential amplifier includes differential pairs to which the output voltages of the selector unit are input. When a voltage corresponding to the digital signal is output, after a correspondence relationship between the output voltages of the selector unit and the inputs of the respective differential pairs of the differential amplifier is allowed to have a short settling time, and is then controlled in accordance with the bit information of the lower order side of the input digital signal.

Abstract: Provided are a solid-state image pickup apparatus which includes: a semiconductor substrate having a plurality of photoelectric converters; a first and a second insulating layers formed on the semiconductor substrate; an optical waveguide formed above each of the plurality of photoelectric converters and in an opening portion of the first and the second insulating layers, and has a refractive index higher than a refractive index of the first insulating layer; and a light reflecting layer formed at a boundary between the optical waveguide and the second insulating layer, and has a refractive index lower than a refractive index of the optical waveguide, where the following expression is satisfied: ?<90°, where a represents an angle formed by a boundary surface between the light reflecting layer and the second insulating layer with respect to a boundary surface between the first insulating layer and the second insulating layer.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: A multi-layer foam sheet with an apparent density of 30 to 300 kg/m3 and a thickness of 0.05 to 2 mm, including a foam layer containing a polyethylene-based resin, and an antistatic layer fusion-laminated by coextrusion on each of both sides of the foam layer. The antistatic layer has a basis weight of 1 to 10 g/m2 and contains a polyethylene-based resin, a polystyrene-based resin, a styrenic elastomer, and a polymeric antistatic agent, with the polystyrene-based resin being contained in the antistatic layer in an amount of 15 to 70% by weight.

Abstract: A programmable logic device includes a plurality of programmable logic elements (PLE) whose electrical connection is controlled by first configuration data. Each of The PLEs includes an LUT in which a relationship between a logic level of an input signal and a logic level of an output signal is determined by second configuration data, an FF to which the output signal of the LUT is input, and an MUX. The MUX includes at least two switches each including first and second transistor. A signal including third configuration data is input to a gate of the second transistor through the first transistor. The output signal of the LUT or an output signal of the FF is input to one of a source and a drain of the second transistor.

Abstract: Data corrupted by a soft error is recovered. A storage device includes a first memory cell, a second memory cell, a sense circuit electrically connected to the first memory cell through a first sense line and to the second memory cell through a second sense line, a digital-analog converter circuit electrically connected to the first memory cell and the second memory cell through a bit line, and an analog-digital converter circuit. The digital-analog converter circuit has a function of applying voltages as first signals to the first memory cell and the second memory cell. Even when a soft error occurs in the first memory cell or the second memory cell, the storage device has a function of recovering data corrupted by the soft error because the sense circuit selects and outputs a higher one of the voltages applied to the first memory cell and the second memory cell.

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Abstract: One embodiment relates to a liquid discharge head substrate including at least one heat generating resistive element, a first insulating layer covering the heat generating resistive element, a conductive layer disposed on the first insulating layer and overlapping the heat generating resistive element with the first insulating layer interposed therebetween in a plan view with respect to an upper surface of the heat generating resistive element, and a second insulating layer covering an edge of the conductive layer. The edge of the conductive layer has a tapered shape.

Abstract: A medium transportation device includes a transportation driving roller that transports a medium; a roller unit including a separation roller as a driven roller that is rotated by rotation of the transportation driving roller and a shaft which penetrates a rotation center of the separation roller; a holder that detachably holds the roller unit; and a lock mechanism that switches between an unlocked state in which the roller unit is unlocked from the holder and a locked state in which the roller unit is locked to the holder.

Abstract: A semiconductor device that has a long data retention time during stop of supply of power supply voltage by reducing leakage current due to miniaturization of a semiconductor element. In a structure where charge corresponding to data is held with the use of low off-state current of a transistor containing an oxide semiconductor in its channel formation region, a transistor for reading data and a transistor for storing charge are separately provided, thereby decreasing leakage current flowing through a gate insulating film.

Abstract: A multi-layer foam sheet with an apparent density of 30 to 300 kg/m3 and a thickness of 0.05 to 2 mm, including a foam layer containing a polyethylene-based resin (A), and an antistatic layer fusion-laminated by coextrusion on each of both sides of the foam layer. The antistatic layer has a basis weight of 1 to 10 g/m2 and contains a polyethylene-based resin (B), a polystyrene-based resin, a styrenic elastomer, and a polymeric antistatic agent, with the polystyrene-based resin being contained in the antistatic layer in an amount of 15 to 70% by weight.

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.