Abstract: A decoder with reduced power consumption is provided. The decoder includes a first circuit and a second circuit for holding data. The second circuit includes a first transistor, a second transistor, and a third transistor. The first transistor and the second transistor include an oxide semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. A gate of the second transistor is electrically connected to one of a source and a drain of the first transistor and a gate of the third transistor is electrically connected to one of a source and a drain of the second transistor. The decoder is configured to provide or stop power supply to the semiconductor device depending on a packet ID of a header portion of the data and to perform data storing or restoring of data between the first circuit and the second circuit.

Abstract: A semiconductor device that suppresses operation delay due to stop and restart of the supply of a power supply potential is provided. A potential corresponding to data held while power supply potential is continuously supplied is backed up in a node connected to a capacitor while the supply of the power supply potential is stopped. Then, by utilizing change in resistance of a channel in a transistor whose gate is the node, the data is restored with restart of the supply of the power supply potential. Note that by supplying a high potential to the node before the data back up, high-speed and accurate data back up is possible.

Abstract: Data corrupted by a soft error is recovered. A storage device includes a first memory cell, a second memory cell, a sense circuit electrically connected to the first memory cell through a first sense line and to the second memory cell through a second sense line, a digital-analog converter circuit electrically connected to the first memory cell and the second memory cell through a bit line, and an analog-digital converter circuit. The digital-analog converter circuit has a function of applying voltages as first signals to the first memory cell and the second memory cell. Even when a soft error occurs in the first memory cell or the second memory cell, the storage device has a function of recovering data corrupted by the soft error because the sense circuit selects and outputs a higher one of the voltages applied to the first memory cell and the second memory cell.

Abstract: A digital to analog conversion circuit is disclosed. In one example, the conversion circuit includes a selector unit and a differential amplifier. The selector unit includes a selector unit that selects nodes from a voltage dividing circuit based upon bit information of a higher order side of an input digital signal and outputs voltages of the selected nodes. The differential amplifier includes differential pairs to which the output voltages of the selector unit are input. When a voltage corresponding to the digital signal is output, after a correspondence relationship between the output voltages of the selector unit and the inputs of the respective differential pairs of the differential amplifier is allowed to have a short settling time, and is then controlled in accordance with the bit information of the lower order side of the input digital signal.

Abstract: The present technology relates to an image sensor capable of achieving both higher S/N and higher frame rate, an electronic device, a control device, a control method, and a program. An AD converter has a comparator in which differential pairs are provided at an input stage. The differential pairs have a plurality of transistors as first transistors and second transistors paired to configure the differential pairs. The AD converter compares a level-changing reference signal with an electric signal output by a shooting unit for performing photoelectric conversion and outputting the electric signal, thereby performing AD conversion on the electric signal. The comparator is controlled such that a transistor to be operated is selected as active transistor from among the transistors depending on the amount of light incident in the shooting unit and the active transistor operates. The present technology is applicable to an image sensor for shooting an image, and the like, for example.

Abstract: A novel electronic device including a reconfigurable circuit is provided. In the electronic device including a reconfigurable circuit capable of executing multi-context operation, a context selection signal is locally generated. For example, a context selection signal is generated in the reconfigurable circuit with the use of context determination data contained in an output of another logic block, for example. The range of application of the context selection signal can be set as appropriate by a user. Thus, multi-context operation performed locally and partly enables efficient use of the circuit. Memory usage can be reduced and its efficiency can be improved compared to the case of using global multi-context driving. Other embodiments may be disclosed and claimed.

Abstract: A decoder with reduced power consumption is provided. The decoder includes a first circuit and a second circuit for holding data. The second circuit includes a first transistor, a second transistor, and a third transistor. The first transistor and the second transistor include an oxide semiconductor in a channel formation region. The third transistor includes silicon in a channel formation region. A gate of the second transistor is electrically connected to one of a source and a drain of the first transistor and a gate of the third transistor is electrically connected to one of a source and a drain of the second transistor. The decoder is configured to provide or stop power supply to the semiconductor device depending on a packet ID of a header portion of the data and to perform data storing or restoring of data between the first circuit and the second circuit.

Abstract: A semiconductor device capable of performing product-sum operation is provided. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. The semiconductor device retains first analog data and reference analog data in the first memory cell and the second memory cell, respectively. A potential corresponding to second analog data is applied to each of them as a selection signal, whereby current depending on the sum of products of the first analog data and the second analog data is obtained. The offset circuit includes a constant current circuit comprising a transistor and a capacitor. A first terminal of the transistor is electrically connected to a first gate of the transistor and a first terminal of the capacitor. A second gate of the transistor is electrically connected to a second terminal of the capacitor.

Abstract: A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.

Abstract: To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced.

Abstract: Provided is a method for producing a polyethylene-based resin extruded foam sheet by extruding and foaming a foamable molten resin composition formed by kneading a mixture containing a low-density polyethylene, a physical blowing agent, and an antistatic agent, wherein the foam sheet has a thickness in a range of from 0.05 to 0.5 mm, and the antistatic agent is a polymeric antistatic agent having a melting point whose different from the melting point of the low-density polyethylene is in a range of from ?10 to +10° C., and having a melt flow rate of 10 g/10 min or more. This method enables a novel polyethylene-based resin extruded foam sheet to be obtained that is of high quality such that formation of a small hole or a through-hole has been reduced or eliminated, and has both excellent strength and a shock-absorbing property despite a very small thickness even in medium- or long-term continuous production, and besides, exhibits a sufficient antistatic property, thus suitable as a glass plate interleaf sheet.

Abstract: Providing a new display device and a display method. When image data is sent from a processor to a display unit, the image data is divided into 2 or more parts such as a photographic picture and a non-picture, and corresponding compressed data is generated by performing a suitable compression processing. The size of each of the compressed data is reduced and is thus suitable to be sent to a display unit. Each of the compressed data is decompressed by a display driver; thus becoming decompressed data. Each of the decompressed data is used for display by the display unit. Other than numerical operation, a display unit having a reflective pixel and a self-luminous pixel may be used to combine the decompressed data.

Abstract: A method for producing a polyethylene-based resin laminated foam sheet according to the present invention is a method for producing a polyethylene-based resin laminated foam sheet 1 with thickness of 0.05 to 0.5 mm in which an anti-static layer is adhered by lamination on at least one surface of the foam layer, including: a step of performing coextrusion and foaming of a laminate which is obtained by combining and laminating, in a die 10, a melt resin composition 6 for forming a foam layer obtained by kneading a low density polyethylene A and a physical foaming agent and a melt resin composition 9 for forming an anti-static layer obtained by kneading a low density polyethylene B and an anti-static agent, wherein the anti-static agent is a polymeric anti-static agent C which has a melting point to allow a melting point difference in the range of from ?10° C. to +10° C. compared to that of the low density polyethylene B and has a melt flow rate of 10 g/10 minutes or more.

Abstract: A medium transportation device includes a transportation driving roller that transports a medium; a roller unit including a separation roller as a driven roller that is rotated by rotation of the transportation driving roller and a shaft which penetrates a rotation center of the separation roller; a holder that detachably holds the roller unit; and a lock mechanism that switches between an unlocked state in which the roller unit is unlocked from the holder and a locked state in which the roller unit is locked to the holder.

Abstract: A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Abstract: This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor.

Abstract: An object is to provide a semiconductor device that automatically adjusts the luminance of a display device. The semiconductor device includes an illuminometer, a threshold detector, a timing controller, a digital-to-analog converter circuit, a first display panel, and a second display panel. The illuminance of external light is measured with the illuminometer, and the threshold value of digital video data is determined by the threshold detector in accordance with the illuminance. The timing controller generates a signal for the first display panel or a signal for the second display panel on the basis of the threshold value and video data transmitted from the outside. The signal for the first display panel and the signal for the second display panel are input to one digital-to-analog converter circuit and converted into digital signals, and the obtained digital signals are input to a corresponding one of the first display panel and the second display panel.

Abstract: A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided.

Abstract: To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell.