Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

Abstract: A semiconductor device includes a first gate electrode, a plurality of first source electrodes, a second gate electrode, and a plurality of second source electrodes. The first gate electrode is arranged with no other electrode between the first gate electrode and a first short side of the semiconductor substrate. The plurality of first source electrodes include a plurality of approximately rectangular first source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate. The second gate electrode is arranged with no other electrode between the second gate electrode and a second short side of the semiconductor substrate. The plurality of second source electrodes include a plurality of approximately rectangular second source electrodes arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors.

Abstract: A method for producing a grain-oriented electrical steel sheet by subjecting a slab of an inhibitor-less ingredient system containing C: 0.002-0.10 mass %, Si: 2.5-6.0 mass %, Mn: 0.010-0.8 mass % and extremely decreased Al, N, Se and S to hot rolling, hot band annealing, cold rolling, decarburization annealing, application of an annealing separator and finish annealing, when a certain temperature within range of 700-800° C. in a heating process of decarburization annealing is T1 and a certain temperature as a soaking temperature within a range of 820-900° C. is T2, a heating rate R1 between 500° C. and T1 is set to not less than 100° C./s and heating rate R2 between T1 and T2 is set to not more than 15° C./s, whereby grain-oriented electrical steel sheet having excellent iron loss property and coating peeling resistance is obtained in the inhibitor-less ingredient system while ensuring decarburization property even when rapid heating is performed during decarburization annealing.

Abstract: A grain-oriented electrical steel sheet has magnetic properties improved over conventional grain-oriented electrical steel sheets. A method of producing a grain-oriented electrical steel sheet comprises: heating a steel slab at 1300° C. or less, the steel slab having a chemical composition containing C, Si, Mn, acid-soluble Al, S and/or Se, Sn and/or Sb, N, and a balance being Fe and inevitable impurities; subjecting the steel slab to hot rolling to obtain a hot rolled steel sheet; subjecting the hot rolled steel sheet to cold rolling once, or twice or more with intermediate annealing performed therebetween, to obtain a cold rolled steel sheet with a final sheet thickness; subjecting the cold rolled steel sheet to primary recrystallization annealing; applying an annealing separator to a surface of the cold rolled steel sheet after the primary recrystallization annealing; and then subjecting the cold rolled steel sheet to secondary recrystallization annealing.

Abstract: To provide a grain-oriented electrical steel sheet that has better magnetic property than conventional ones, in hot band annealing of the hot rolled steel sheet obtained by a predetermined step, an average heating rate from ordinary temperature to 400° C. is set to 50° C./s or more, and a time to reach 900° C. from 400° C. is set to 100 sec or less.

Abstract: In a method for producing a grain-oriented electrical steel sheet by comprising a series of steps of hot rolling a raw steel material comprising C: 0.002-0.10 mass %, Si: 2.0-8.0 mass %, and Mn: 0.005-1.0 mass %, subjecting the steel sheet to a hot band annealing as required, cold rolling to obtain a cold rolled sheet having a final sheet thickness, subjecting the steel sheet to primary recrystallization annealing combined with decarburization annealing, applying an annealing separator to the steel sheet surface and then subjecting to final annealing, rapid heating is performed at a rate of not less than 50° C./s in a region of 200-700° C. in the heating process of the primary recrystallization annealing, and the steel sheet is held at any temperature of 250-600° C. in the above region for 1-10 seconds, while a soaking process of the primary recrystallization annealing is controlled to a temperature range of 750-900° C., a time of 90-180 seconds and PH2O/PH2 in an atmosphere of 0.25-0.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N-2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: A rear bus bar includes a rear electrode connecting part connected to an upper end electrode of a capacitor element, and a rear overlapping part is led out upward from a rear electrode connecting part at a position overlapping with the upper end electrode. A front bus bar includes a front electrode connecting part connected to a lower end electrode of the capacitor element, a first relay part, and a second relay part extending along the upper end electrode, and a front overlapping part is led out upward from the second relay part. An insulation module includes a first insulating part interposed between the front overlapping part and the rear overlapping part, and a second insulating part interposed between the upper end electrode and the second relay part.

Abstract: In a method for producing a grain-oriented electrical steel sheet by hot rolling a raw steel material containing C: 0.002˜0.10 mass %, Si: 2.0˜8.0 mass % and Mn: 0.005˜1.0 mass % to obtain a hot rolled sheet, subjecting the hot rolled sheet to a hot band annealing as required and further to one cold rolling or two or more cold rollings including an intermediate annealing therebetween to obtain a cold rolled sheet having a final sheet thickness, subjecting the cold rolled sheet to a primary recrystallization annealing combined with decarburization annealing, applying an annealing separator to the steel sheet surface and then subjecting to a final annealing, when rapid heating is performed at a rate of not less than 50° C./s in a range of 100˜700° C. in the heating process of the primary recrystallization annealing, the steel sheet is subjected to a holding treatment at any temperature of 250˜600° C. for 0.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: A single roll type apparatus manufactures a metal thin strip by injecting a molten metal onto a cooling roll outer peripheral face solidifying it to manufacture the strip. An airflow blocking device for blocking the airflow along the cooling roll surface is at a molten metal injection nozzle upstream side for injecting the molten metal in the cooling roll rotation direction, and a carbon dioxide gas injection nozzle for forming a carbon dioxide flow on the cooling roll outer peripheral surface between the airflow blocking device and molten metal injection nozzle or forming a carbon dioxide atmosphere on the cooling roll surface between the airflow blocking device and the molten metal injection nozzle is disposed, and a foreign material removal device for removing foreign material attached to the cooling roll surface is disposed at an upstream side of the airflow blocking device in the rotation direction of the cooling roll.

Abstract: In the production of a grain-oriented electrical steel sheet by hot rolling a slab containing Si: 2.0-8.0 mass % and no inhibitor-forming ingredients, cold rolling, subjecting to a decarburization annealing, applying an annealing separator composed mainly of MgO and containing a Ti compound(s) and subjecting to a finish annealing, an atmosphere in the heating process of the decarburization annealing is rendered into a dry atmosphere having a dew point of not higher than 0° C. and a Ti amount (Ti(a)) and a N amount (N(a)) contained in an iron matrix after the removal of a forsterite coating and a Ti amount (Ti(b)) and a N amount (N(b)) contained in the steel sheet having a forsterite coating are made to satisfy relationships as N(b)?0.0050 mass %, N(b)/N(a)?4, and Ti(b)/Ti(a)?4.

Abstract: Provides is a method of producing a grain oriented electrical steel sheet by heating a steel slab having a predetermined composition, then subjecting the slab to hot rolling to obtain a hot rolled sheet, then optionally subjecting the hot rolled sheet to hot band annealing and subsequent cold rolling once, or twice or more with intermediate annealing performed therebetween to obtain a cold rolled sheet with final sheet thickness, then subjecting the cold rolled sheet to primary recrystallization annealing and subsequent secondary recrystallization annealing, in which the aging index AI of the steel sheet before final cold rolling is set to 70 MPa or less to effectively grow Goss-oriented grains to thereby obtain a grain-oriented electrical steel sheet with good magnetic properties, without the restriction of containing a relatively large amount of C.

Abstract: A semiconductor device in chip size package includes first and second metal oxide semiconductor transistors both vertical transistors formed in first and second regions obtained by dividing the semiconductor device into halves. The first metal oxide semiconductor transistor includes one or more first gate electrodes and four or more first source electrodes provided in one major surface, each of the first gate electrodes is surrounded, in top view, by the first source electrodes, and for any combination of a first gate electrode and a first source electrode, closest points between the first gate and first source electrodes are on a line inclined to a chip side. The second metal oxide semiconductor transistor includes the same structure as the first metal oxide semiconductor transistor. A conductor that connects the drains of the first and second metal oxide semiconductor transistors is provided in the other major surface of the semiconductor device.

Abstract: Provided are a grain-oriented electrical steel sheet with low iron loss even when including at least one grain boundary segregation element among Sb, Sn, Mo, Cu, and P, and a method for manufacturing the same. In our method, Pr is controlled to satisfy Pr??0.075T+18, where T>10, 5<Pr, T (hr) is the time required after final annealing to reduce the temperature of a secondary recrystallized sheet from 800° C. to 400° C., and Pr (MPa) is the line tension on the secondary recrystallized sheet during flattening annealing. As a result, a grain-oriented electrical steel sheet in which iron loss is low and a dislocation density near crystal grain boundaries of the steel substrate is 1.0×1013 m?2 or less can be obtained even when the grain-oriented electrical steel sheet contains at least one of Sb, Sn, Mo, Cu, and P.

Abstract: In a method of producing a grain-oriented electrical steel sheet by hot rolling a steel slab having a chemical composition comprising C: 0.001 to 0.10 mass %, Si: 1.0 to 5.0 mass %, Mn: 0.01 to 0.5 mass %, S and/or Se: 0.005 to 0.040 mass %, sol. Al: 0.003˜0.050 mass % and N: 0.0010 to 0.020 mass %, subjecting to single cold rolling or two or more cold rollings including an intermediate annealing therebetween to a final thickness, performing primary recrystallization annealing, and thereafter applying an annealing separator to perform final annealing, a temperature range of 550° C. to 700° C. in a heating process of the primary recrystallization annealing is rapidly heated at an average heating rate of 40 to 200° C./s, while any temperature zone of from 250° C. to 550° C. is kept at a heating rate of not more than 10° C./s for 1 to 10 seconds, whereby the refining of secondary recrystallized grains is attained and grain-oriented electrical steel sheets are stably obtained with a low iron loss.

Abstract: In a method for producing a grain-oriented electrical steel sheet by hot rolling a steel slab having a chemical composition including C: 0.001˜0.10 mass %, Si: 1.0˜5.0 mass %, Mn: 0.01˜0.5 mass %, Al: less than 0.0100 mass %, each of S, Se, O and N: not more than 0.0050 mass % and the remainder being Fe and inevitable impurities, subjecting the resulting hot rolled sheet to a single cold rolling or two or more cold rollings sandwiching an intermediate annealing therebetween to a final thickness, subjecting to a primary recrystallization annealing, applying an annealing separator thereto and then subjecting to a finish annealing, a zone of 550˜700° C. in a heating process of the primary recrystallization annealing is rapidly heated at an average heating rate of 40˜200° C./s, while any temperature zone of 250˜550° C. is kept at a heating rate of not more than 10° C.

Abstract: A steel slab having a composition not containing an inhibitor component further contains, in mass %, at least one selected from: Sn: 0.010% to 0.200%; Sb: 0.010% to 0.200%; Mo: 0.010% to 0.150%; and P: 0.010% to 0.150%, and annealing that satisfies a relationship Td?Tf is performed, where Td (° C.) is a highest temperature at which the steel sheet is annealed in decarburization annealing and Tf (° C.) is a highest temperature before secondary recrystallization of the steel sheet starts in final annealing. Thus, a grain-oriented electrical steel sheet with significantly reduced magnetic property scattering in a coil is obtained without using an inhibitor component.