Abstract: A steel slab having a composition not containing an inhibitor component further contains, in mass %, at least one selected from: Sn: 0.010% to 0.200%; Sb: 0.010% to 0.200%; Mo: 0.010% to 0.150%; and P: 0.010% to 0.150%, and annealing that satisfies a relationship Td?Tf is performed, where Td (° C.) is a highest temperature at which the steel sheet is annealed in decarburization annealing and Tf (° C.) is a highest temperature before secondary recrystallization of the steel sheet starts in final annealing. Thus, a grain-oriented electrical steel sheet with significantly reduced magnetic property scattering in a coil is obtained without using an inhibitor component.

Abstract: In a method for producing a grain-oriented electrical steel sheet by including a series of steps of hot rolling a raw steel material containing C: 0.002-0.10 mass %, Si: 2.0-8.0 mass % and Mn: 0.005-1.0 mass % to obtain a hot rolled sheet, subjecting the hot rolled steel sheet after or without hot band annealing to one stage cold rolling or two or more stage cold rollings including an intermediate annealing therebetween to obtain a cold rolled sheet having a final sheet thickness, subjecting the cold rolled sheet to decarburization annealing combined with primary recrystallization annealing, applying an annealing separator to the steel sheet surface, and then subjecting to a final annealing.

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Abstract: An electrical steel sheet has a component composition including, by mass %, C: 0.007% or less, Si: 4% to 10%, and Mn: 0.005% to 1.0%, the balance being Fe and incidental impurities, as well as a sheet thickness within a range of 0.01 mm or more to 0.10 mm or less, and a profile roughness Pa of 1.0 ?m or less. The electrical steel sheet exhibits excellent iron loss properties whereby the magnetic property is free from deterioration, and degradation of the stacking factor can be avoided, even when the steel sheet with a thickness of 0.10 mm or less has been subjected to siliconizing treatment to increase the Si content in the steel.

Abstract: In a method for producing a grain-oriented electrical steel sheet by comprising a series of steps of hot rolling a raw steel material containing C: 0.002-0.10 mass %, Si: 2.0-8.0 mass % and Mn: 0.005-1.0 mass % to obtain a hot rolled sheet, subjecting the hot rolled steel sheet after or without hot band annealing to one stage cold rolling or two or more stage cold rollings including an intermediate annealing therebetween to obtain a cold rolled sheet having a final sheet thickness, subjecting the cold rolled sheet to decarburization annealing combined with primary recrystallization annealing, applying an annealing separator to the steel sheet surface and then subjecting to a final annealing, when rapid heating is performed at a rate of not less than 50° C./s in a range of 200-700° C. of the decarburization annealing, the cold rolled sheet is subjected to holding at any temperature of 250-600° C.

Abstract: A method for producing a grain-oriented electrical steel sheet by subjecting a slab of an inhibitor-less ingredient system containing C: 0.002-0.10 mass %, Si: 2.5-6.0 mass %, Mn: 0.010-0.8 mass % and extremely decreased Al, N, Se and S to hot rolling, hot band annealing, cold rolling, decarburization annealing, application of an annealing separator and finish annealing, when a certain temperature within range of 700-800° C. in a heating process of decarburization annealing is T1 and a certain temperature as a soaking temperature within a range of 820-900° C. is T2, a heating rate R1 between 500° C. and T1 is set to not less than 100° C./s and heating rate R2 between T1 and T2 is set to not more than 15° C./s, whereby grain-oriented electrical steel sheet having excellent iron loss property and coating peeling resistance is obtained in the inhibitor-less ingredient system while ensuring decarburization property even when rapid heating is performed during decarburization annealing.

Abstract: According to one embodiment, it includes a stacked body including N-number of layers (N is an integer of 2 or more) stacked on a semiconductor substrate, opening portions penetrating the stacked body in a stacking direction, columnar bodies respectively disposed in the opening portions, and a slit dividing M-number of layers (M is an integer of 1 or more and (N?2) or less) of the stacked body in a horizontal direction from above, wherein the slit is formed with lateral surfaces respectively having a spatial periodicity in a horizontal plane.

Abstract: In a method for producing a grain-oriented electrical steel sheet by including a series of steps of hot rolling a raw steel material containing C: 0.002-0.10 mass %, Si: 2.0-8.0 mass % and Mn: 0.005-1.0 mass % to obtain a hot rolled sheet, subjecting the hot rolled steel sheet after or without hot band annealing to one stage cold rolling or two or more stage cold rollings including an intermediate annealing therebetween to obtain a cold rolled sheet having a final sheet thickness, subjecting the cold rolled sheet to decarburization annealing combined with primary recrystallization annealing, applying an annealing separator to the steel sheet surface, and then subjecting to a final annealing.

Abstract: According to one embodiment, the embodiment includes memory cells, a memory cell array, a first stepped portion, and a second stepped portion. The memory cell array includes memory cells and a plurality of conducting layers. n. The plurality of conducting layers are coupled to the memory cells. The first stepped portion includes the plurality of conducting layers. Height of the first stepped portion decrements with separation from the memory cell array. The second stepped portion has a structure in which a plurality of first layers and second layers are laminated in alternation on the semiconductor substrate. The second stepped portion is disposed opposing the first stepped portion. Height of the second stepped portion increments with separation from the memory cell array. A lowest surface of the second stepped portion is formed at a position higher than the conducting layer at a lowest layer of the first stepped portion.

Abstract: Provides is a method of producing a grain oriented electrical steel sheet by heating a steel slab having a predetermined composition, then subjecting the slab to hot rolling to obtain a hot rolled sheet, then optionally subjecting the hot rolled sheet to hot band annealing and subsequent cold rolling once, or twice or more with intermediate annealing performed therebetween to obtain a cold rolled sheet with final sheet thickness, then subjecting the cold rolled sheet to primary recrystallization annealing and subsequent secondary recrystallization annealing, in which the aging index AI of the steel sheet before final cold rolling is set to 70 MPa or less to effectively grow Goss-oriented grains to thereby obtain a grain-oriented electrical steel sheet with good magnetic properties, without the restriction of containing a relatively large amount of C.

Abstract: A iron-based amorphous alloy thin strip having a chemical composition represented by a chemical formula of FexBySiz (wherein x is 78-83 at %, y is 8-15 at % and z is 6-13 at %), wherein the number of air pockets at a surface contacting with a cooling roll is not more than 8 pockets/mm2 and an average length in a circumferential direction of the roll is not more than 0.5 mm.

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Abstract: In a method for producing a grain-oriented electrical steel sheet by comprising a series of steps of hot rolling a raw steel material comprising C: 0.002-0.10 mass %, Si: 2.0-8.0 mass %, and Mn: 0.005-1.0 mass %, subjecting the steel sheet to a hot band annealing as required, cold rolling to obtain a cold rolled sheet having a final sheet thickness, subjecting the steel sheet to primary recrystallization annealing combined with decarburization annealing, applying an annealing separator to the steel sheet surface and then subjecting to final annealing, rapid heating is performed at a rate of not less than 50° C./s in a region of 200-700° C. in the heating process of the primary recrystallization annealing, and the steel sheet is held at any temperature of 250-600° C. in the above region for 1-10 seconds, while a soaking process of the primary recrystallization annealing is controlled to a temperature range of 750-900° C., a time of 90-180 seconds and PH2O/PH2 in an atmosphere of 0.25-0.

Abstract: In a method for producing a grain-oriented electrical steel sheet by hot rolling a steel slab comprising C: 0.04-0.12 mass %, Si: 1.5-5.0 mass %, Mn: 0.01-1.0 mass %, sol. Al: 0.010-0.040 mass %, N: 0.004-0.02 mass %, one or two of S and Se: 0.005-0.05 mass % in total of S and Se, cold rolling, and subjecting to primary recrystallization annealing and further to final annealing, a content ratio of sol. Al to N in the steel slab (sol. Al/N) and a final thickness d (mm) satisfy an equation of 4d+1.52?sol. Al/N?4d+2.32, and the steel sheet in the heating process of the final annealing is held at a temperature of 775-875° C. for 40-200 hours and then heated in a temperature region of 875-1050° C. at a heating rate of 10-60° C./hr to preform secondary recrystallization and purification treatment, whereby an extremely-thin grain-oriented electrical steel sheet having a low iron loss and a small deviation in coil is produced.

Abstract: In a method for producing a grain-oriented electrical steel sheet by hot rolling a raw steel material containing C: 0.002˜0.10 mass %, Si: 2.0˜8.0 mass % and Mn: 0.005˜1.0 mass % to obtain a hot rolled sheet, subjecting the hot rolled sheet to a hot band annealing as required and further to one cold rolling or two or more cold rollings including an intermediate annealing therebetween to obtain a cold rolled sheet having a final sheet thickness, subjecting the cold rolled sheet to a primary recrystallization annealing combined with decarburization annealing, applying an annealing separator to the steel sheet surface and then subjecting to a final annealing, when rapid heating is performed at a rate of not less than 50° C./s in a range of 100˜700° C. in the heating process of the primary recrystallization annealing, the steel sheet is subjected to a holding treatment at any temperature of 250˜600° C. for 0.

Abstract: A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.

Abstract: A semiconductor device according to an embodiment includes a stacked body, a second insulating film, a third insulating film and a plurality of contacts. The stacked body includes alternatively stacked electrode films and first insulating films, and has an end portion in which a terrace is formed for each pair of the electrode film and the first insulating film. The second insulating film covers the upper faces and the lower faces of the electrode films in the end portion of the stacked body. The second insulating film has a composition different from the composition of the first insulating film. The third insulating film is provided on the end portion of the stacked body. The third insulating film has a composition different from the composition of the second insulating film. The contact passes through the third insulating film and the second insulating film, and contacts the electrode film.

Abstract: A grain oriented electrical steel sheet has a total length of cracks in a film on a steel sheet surface, of 20 ?m or less per 10000 ?m2 of the film, wherein magnetic domain refinement interval in a rolling direction of the steel sheet, provided in magnetic domain refinement through substantially linear introduction of thermal strain from one side of the steel sheet corresponding to a winding outer peripheral side of a coiled steel sheet at a stage of final annealing in a direction intersecting the rolling direction; and deflection of 3 mm or less per unit length: 500 mm in the rolling direction of the steel sheet.

Abstract: When a steel sheet containing Si: 2-5 mass % after cold rolling is subjected to a primary recrystallization annealing and a finishing annealing for secondary recrystallization to form a grain-oriented electrical steel sheet, the primary recrystallization annealing is performed by rapid heating in the heating process and temperature keeping treatment at a certain temperature in the course of the heating to thereby obtain a grain-oriented electrical steel sheet having plural peaks in a distribution of misorientation angle between crystal orientation of secondary recrystallized grains and Goss orientation, wherein misorientation angle of the second smallest peak among the plural peaks is preferably not less than 5° and a grain size of secondary recrystallized grains is not more than 15 mm.

Abstract: A semiconductor device according to an embodiment includes a stacked body, a second insulating film, a third insulating film and a plurality of contacts. The stacked body includes alternatively stacked electrode films and first insulating films, and has an end portion in which a terrace is formed for each pair of the electrode film and the first insulating film. The second insulating film covers the upper faces and the lower faces of the electrode films in the end portion of the stacked body. The second insulating film has a composition different from the composition of the first insulating film. The third insulating film is provided on the end portion of the stacked body. The third insulating film has a composition different from the composition of the second insulating film. The contact passes through the third insulating film and the second insulating film, and contacts the electrode film.