Abstract: A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.

Abstract: A capacitor has a capacitor element, an electrolyte, a cylindrical case made of metal and having a bottom, a metal terminal plate, and a sealing rubber. The terminal plate has a body portion and a flange portion projected from an outer peripheral surface of the body portion toward the case. The sealing rubber is abutted onto the flange portion of the terminal plate, and is interposed between the outer peripheral surface of the body portion of the terminal plate and a side surface of the case for sealing the case. The case has a drawn and grooved portion formed by being drawn and thus grooved from an outside of the side surface at a place so that the sealing rubber is compressed between the outer peripheral surface of the body portion of the terminal plate and the case. Then, a ring-like groove is provided on the outer peripheral surface of the body portion of the terminal plate at a portion, which is padded with the sealing rubber, the sealing rubber is projected into the groove.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

Abstract: A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

Abstract: A capacitor includes a capacitor element including first and second electrodes, an electrolyte solution, first and second collector plates made of metal and joined to the first and second electrodes of the capacitor element, respectively, a case accommodating the capacitor element, the electrolyte solution, the first and second collector plates, a terminal plate placed at an opening of the case and joined to the second collector plate, and a sealing rubber sealing the terminal plate and the opening of the case. The case has a tubular portion and a bottom plate closing the tubular portion. An inner surface of the bottom plate of the case has a contacting portion contacting the first collector plate and a junction portion facing the first collector plate.

Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: A capacitor has a capacitor element, an electrolyte, a cylindrical case made of metal and having a bottom, a metal terminal plate, and a sealing rubber. The terminal plate has a body portion and a flange portion projected from an outer peripheral surface of the body portion toward the case. The sealing rubber is abutted onto the flange portion of the terminal plate, and is interposed between the outer peripheral surface of the body portion of the terminal plate and a side surface of the case for sealing the case. The case has a drawn and grooved portion formed by being drawn and thus grooved from an outside of the side surface at a place so that the sealing rubber is compressed between the outer peripheral surface of the body portion of the terminal plate and the case. Then, a ring-like groove is provided on the outer peripheral surface of the body portion of the terminal plate at a portion, which is padded with the sealing rubber, the sealing rubber is projected into the groove.

Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

Abstract: An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line.

Abstract: A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.

Abstract: A solid-state imaging device includes: a plurality of pixels arranged in a matrix, the matrix defining columns of the pixels, and each of the pixels outputting an analog signal by performing photoelectric conversion; an analog-digital converter provided for each of columns which sequentially converts a plurality of analog signals outputted from the pixels in a column into a plurality of digital signals; a memory circuit provided for each column which includes memories and performs, in parallel, a process of storing a one of the digital signals in one of the memories and a process of outputting another of the digital signals previously stored in another of the memories; and data buses connected to the memory in each column.

Abstract: An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

Abstract: A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: A solid-state imaging device for high-speed photography includes an imaging element area in which a plurality of pixel portions having photodetectors for photography are disposed in a matrix form. The solid-state imaging device generates image data by capturing pixel information obtained from the photodetectors for photography. The solid-state imaging device for high-speed photography further includes: a change detection element that detects a change in an amount of incident light, which is disposed in the imaging element area or at a predetermined position surrounding the imaging element area; and a controller that controls starting or stopping of capturing of pixel information obtained from the photodetectors for photography in accordance with a trigger signal based on a detection signal output from the change detection element.

Abstract: A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera.