Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

Abstract: Provided is a solid-state imaging device that can perform a high-speed imaging, with appropriate number of pixels maintained. A plurality of pixels are arranged in a matrix in the solid-state imaging device. Each pixel includes a plurality of signal charge holding units that hold signal charges output from a photo diode. A write target switching unit selects the signal charge holding units so that signal charges output at different time points are written to the signal charge holding units, respectively. A read target switching unit switches between signal charge holding units from which to read a signal charge.

Abstract: An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.

Abstract: A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two ?/4 multilayer films, and an insulation layer sandwiched between the two ?/4 multilayer films. Here, each of the ?/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not ?/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.

Abstract: Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.

Abstract: A solid-state imaging device according to the present invention comprises: a region (hereinafter, referred to as a pixel cell 100) in which at least a photodiode 101 for performing photoelectric conversion, a readout MOS transistor 102 for reading out from the photodiode 101 an electric charge photoelectrically converted, and a floating diffusion 103 for reading out and storing the electric charge via the readout MOS transistor 102 from the photodiode are arranged; and a region (hereinafter, referred to as a transistor cell 106) which includes an amplifier MOS transistor 105 having a plurality of two or more said pixel cells 100 connected thereto and a reset MOS transistor 104 for resetting a potential of the floating diffusion 103 so as to be a potential the same as a potential of a power source and in which at least the reset MOS transistor 104 and the amplifier MOS transistors 105 are arranged, and the pixel cell 100 and the transistor cell 106 are two-dimensionally arranged.

Abstract: In an electric double-layer capacitor, resistance of a polarizable electrode layer is reduced and gas generation inside a case is suppressed in an attempt to improve reliability. On that account, an electric double-layer capacitor is provided, which is obtained by housing in a case, together with a driving electrolyte, a capacitor element wound with a separator interposed between electrodes being paired anode and cathode electrodes in each of which polarizable electrode layers are formed on and lead wires are fixed to both sides of a current collector made of metallic foil, such that the polarizable electrode layers are opposed to each other. Further, an electric double-layer capacitor is provided in which the lead wire is fixed to a polarizable-electrode-layer-removed section on the electrode where the polarizable electrode layer has been removed, and an area of the polarizable-electrode-layer-removed section is not smaller than 1 and not larger than 2.

Abstract: A capacitor includes a capacitor element including first and second electrodes, an electrolyte solution, first and second collector plates made of metal and joined to the first and second electrodes of the capacitor element, respectively, a case accommodating the capacitor element, the electrolyte solution, the first and second collector plates, a terminal plate placed at an opening of the case and joined to the second collector plate, and a sealing rubber sealing the terminal plate and the opening of the case. The case has a tubular portion and a bottom plate closing the tubular portion. An inner surface of the bottom plate of the case has a contacting portion contacting the first collector plate and a junction portion facing the first collector plate.

Abstract: A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.

Abstract: An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.

Abstract: In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90.

Abstract: A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

Abstract: A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

Abstract: A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.

Abstract: A wavelength separation filter 206 is composed of ?/4 multilayer films 302 to 304 that are sequentially laminated on a multilayer interference filter 301. The multilayer interference filter 301 is composed of two ?/4 multilayer films with a dielectric layer sandwiched therebetween. Also, the multilayer interference filter 301 is composed of parts 301B, 301G, 301R that transmit blue light, green light, and red light, respectively. The multilayer interference filter 301 wavelength-separates visible light. The ?/4 multilayer films 302 to 304 reflect light having a wavelength within wavelength ranges having set-wavelengths of 800 nm, 900 nm, and 1000 nm respectively. In other words, the ?/4 multilayer films 302 to 304 reflect near infrared light.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

Abstract: A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: In an electric double-layer capacitor, resistance of a polarizable electrode layer is reduced and gas generation inside a case is suppressed in an attempt to improve reliability. On that account, an electric double-layer capacitor is provided, which is obtained by housing in a case, together with a driving electrolyte, a capacitor element wound with a separator interposed between electrodes being paired anode and cathode electrodes in each of which polarizable electrode layers are formed on and lead wires are fixed to both sides of a current collector made of metallic foil, such that the polarizable electrode layers are opposed to each other. Further, an electric double-layer capacitor is provided in which the lead wire is fixed to a polarizable-electrode-layer-removed section on the electrode where the polarizable electrode layer has been removed, and an area of the polarizable-electrode-layer-removed section is not smaller than 1 and not larger than 2.