Abstract: A pallet (501) supporting a half-etched leadframe with cantilever-type leads (403) without metallic supports during the step of attaching components (510) to the leads in order to assemble an electronic system. After assembly, the pallet is removed before the molding step that encapsulates (601a) the components on the leadframe and mechanically supports (601b) the cantilever leads. The pallet is machined from metal or inert plastic material, tolerates elevated temperatures during soldering, and is reusable for the next assembly batch.

Abstract: A pallet (501) supporting a half-etched leadframe with cantilever-type leads (403) without metallic supports during the step of attaching components (510) to the leads in order to assemble an electronic system. After assembly, the pallet is removed before the molding step that encapsulates (601a) the components on the leadframe and mechanically supports (601b) the cantilever leads. The pallet is machined from metal or inert plastic material, tolerates elevated temperatures during soldering, and is reusable for the next assembly batch.

Abstract: A semiconductor device package and related method are disclosed for providing a semiconductor device encapsulated in a protective package body. The device has an exposed surface to which a thermal compound is applied for improving a thermal path for the egress of heat from the device. Preferred embodiments are disclosed in which a removable cover is attached to the thermal compound for further improved protection during handling.

Abstract: A semiconductor device package and related method are disclosed for providing a semiconductor device encapsulated in a protective package body. The device has an exposed surface to which a thermal compound is applied for improving a thermal path for the egress of heat from the device. Preferred embodiments are disclosed in which a removable cover is attached to the thermal compound for further improved protection during handling.

Abstract: Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.

Abstract: An integrated circuit (IC) chip, mounted on a leadframe, has a network of power distribution lines deposited on the surface of the chip so that these lines are located over active components of the IC, connected vertically by metal-filled vias to selected active components below the lines, and also by conductors to segments of the leadframe. Furthermore, the lines are fabricated with a sheet resistance of less than 1.5 m?/· and the majority of the lines is patterned as straight lines between the vias and the conductors, respectively.

Abstract: An improved n-channel integrated lateral DMOS (10) in which a buried body region (30), beneath and self-aligned to the source (18) and normal body diffusions, provides a low impedance path for holes emitted at the drain region (16). This greatly reduces secondary electron generation, and accordingly reduces the gain of the parasitic PNP bipolar device. The reduced regeneration in turn raises the critical field value, and hence the safe operating area.

Abstract: Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.

Abstract: The concept of the present invention describes a semiconductor device with a junction 504 between a lightly doped region 501 and a heavily doped region 502, wherein the junction has an elongated portion 504a and curved portions 504b. The doping concentration of the lightly doped region is configured so that it exhibits higher resistivity in the proximity 510 of the curved portion by an amount suitable to lower the electric field strength during device operation and thus to offset the increased field strength caused by the curved portion. As a consequence, the device breakdown voltage in the curved junction portion becomes equal to or greater than the breakdown voltage in the linear portion.

Abstract: An integrated circuit (IC) chip, mounted on a leadframe, has a network of power distribution lines deposited on the surface of the chip so that these lines are located over active components of the IC, connected vertically by metal-filled vias to selected active components below the lines, and also by conductors to segments of the leadframe. Furthermore, the lines are fabricated with a sheet resistance of less than 1.5 m?/? and the majority of the lines is patterned as straight lines between the vias and the conductors, respectively.

Abstract: An integrated circuit (IC) chip, mounted on a leadframe, has a network of power distribution lines deposited on the surface of the chip so that these lines are located over active components of the IC, connected vertically by metal-filled vias to selected active components below the lines, and also by conductors to segments of the leadframe. The network relocates most of the conventional power distribution interconnections from the circuit level to the newly created surface network, thus saving substantial amounts of silicon real estate and permitting shrinkage of the IC area. The network is electrically connected to selected active components by metal-filled vias; since these vias can easily be redesigned to other locations, IC designers gain a new degree of design freedom.

Abstract: A semiconductor integrated circuit comprises contact pads located over active components, which are positioned to minimize the distance for power delivery between a selected pad and one or more corresponding active components, to which the power is to be delivered. This minimum distance further enhances dissipation of thermal energy released by the active components. More specifically, a semiconductor integrated circuit comprises a laterally organized power transistor, an array of power supply contact pads distributed over the transistor, means for providing a distributed, predominantly vertical current flow from the contact pads to the transistor, and means for connecting a power source to each of the contact pads. Positioning the power supply contact pads directly over the active power transistor further saves precious silicon real estate area.

Abstract: An integrated circuit (IC) chip, mounted on a leadframe, has a network of power distribution lines deposited on the surface of the chip so that these lines are located over active components of the IC, connected vertically by metal-filled vias to selected active components below the lines, and also by conductors to segments of the leadframe. The network relocates most of the conventional power distribution interconnections from the circuit level to the newly created surface network, thus saving substantial amounts of silicon real estate and permitting shrinkage of the IC area. The network is electrically connected to selected active components by metal-filled vias; since these vias can easily be redesigned to other locations, IC designers gain a new degree of design freedom.

Abstract: An improved n-channel integrated lateral DMOS (10) in which a buried body region (30), beneath and self-aligned to the source (18) and normal body diffusions, provides a low impedance path for holes emitted at the drain region (16). This greatly reduces secondary electron generation, and accordingly reduces the gain of the parasitic PNP bipolar device. The reduced regeneration in turn raises the critical field value, and hence the safe operating area.

Abstract: A method for reducing the drain resistance of a drain-extended MOS transistor in a semiconductor wafer, while maintaining a high transistor breakdown voltage. The method provides a first well (502) of a first conductivity type, operable as the extension of the transistor drain (501) of the first conductivity type; portions of the well are covered by a first insulator (503) having a first thickness. A second well (504) of the opposite conductivity type is intended to contain the transistor source (506) of the first conductivity type; portions of the second well are covered by a second insulator (507) thinner than the first insulator. The first and second wells form a junction (505) that terminates at the second insulator (530a, 530b). The method deposits a photoresist layer (510) over the wafer, which is patterned by opening a window (510a) that extends from the drain to the junction termination.

Abstract: A transistor is formed in a semiconductor substrate. A deep n-well region is used in conjunction with a shallow n-well region. A lightly doped drain extension region is disposed between a drain region and a gate conductor. The use of the regions and against the backdrop of region provides for a very high breakdown voltage as compared to a relatively low channel resistance for the device.

Abstract: A drain-extended MOS transistor in a semiconductor wafer (300) of a first conductivity type comprises a first well (315) of the first conductivity type, operable as the extension of the transistor drain (305) of the first conductivity type, and covered by a first insulator (312) having a first thickness, and further a second well (302) of the opposite conductivity type, intended to contain the transistor source (304) of the first conductivity type, and covered by a second insulator (311) thinner than said first insulator (312). First and second wells form a junction (330) that terminates (320, 321) at the second insulator. The first well has a region (360) in the proximity of the junction termination, which has a higher doping concentration than the remainder of the first well and extends not deeper than the first insulator thickness.

Abstract: A power integrated circuit architecture (10) having a high side transistor (100) interposed between a control circuit (152) and a low side transistor (100) to reduce the effects of the low side transistor on the operation of the control circuit. The low side transistor has a heavily p-doped region (56) designed to reduce minority carrier lifetime and improve minority carrier collection to reduce the minority carriers from disturbing the control circuit. The low side transistor has a guardring (16) tied to an analog ground, whereby the control circuit is tied to a digital ground, such that the collection of the minority carriers into the analog ground does not disturb the operation of the control circuit. The low side transistor is comprised of multiple transistor arrays (90) partitioned by at least one deep n-type region (16), which deep n-type region forms a guardring about the respective transistor array.

Abstract: An integrated circuit (IC) chip has a metal network of electrical power distribution lines which have a thermal conductance at least an order of magnitude greater than underlying thin film electrical interconnects. These lines are deposited on the surface of the chip (FIG. 2), located directly over active IC components, and electrically and thermally connected vertically to selected active components below the lines. Electrical conductors are operable to connect the lines to an outside source, and additional electrically non-functional conductors are distributed on the lines, operable to steepen the thermal gradient for thermal flux away from said active components and lines.

Abstract: An array (90) of transistors (50) formed in a p-type layer (34), and including a second heavily doped p-type region (56) laterally extending proximate the drain of each transistor to collect minority carriers of the transistors. A deep n-type region (16) is formed in the p-type layer (34) and proximate a n-type buried layer (14) together forming a guardring about the drain regions of the plurality of transistors. The array of transistors may be interconnected in parallel to form a large power FET, whereby the heavily doped second p-type region (56) reduces the minority carrier lifetime proximate the drains of the transistors. The guardring (14, 16) collects the minority carriers (T1) and is isolated from the drains of the transistors. Preferably, the transistors are formed in a P-epi tank that is isolated by the guardring. The P-epi tank is preferably formed upon a buried NBL layer, and the deep n-type region is an N+ well extending to the buried NBL layer.