Abstract: A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12) . A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).

Abstract: A method is provided for manufacturing a semiconductor device at a face of a semiconductor layer having a first conductivity type. Over the semiconductor layer and insulating therefrom a gate conductive layer is formed, which has a predetermined pattern defining an opening. A well of a second conductivity type is then implanted into the face of the semiconductor layer by self-aligning to the sidewall of the gate conductive layer. A first surface region of the first conductivity type is formed within the well and self-aligned to the sidewall of the gate conductive layer. A sacrificial sidewall layer is formed in the opening which defines a second narrower opening, so that a subsurface region of the second conductivity type may be formed within the well self-aligned to the sacrificial sidewall layer. A second surface region of the second conductivity type is then formed substantially within the first surface region and self-aligned to the sacrificial sidewall layer.

Abstract: Methods and circuits of integrated DMOS, CMOS, NPN, and PNP devices include self-aligned DMOS (411) with increased breakdown voltage and ruggedness for recovery from transients including additional Zener diodes (402/474).