Abstract: An apparatus for supporting a worker's body part, for example a surgeon's arm, is provided. The body part is supported by a base movably supported by a support. The apparatus has a free mode and a limitation mode, which are switchable. When it is determined that the body part is attempting to move the base or a fastening member, the operating mode is switched to the free mode. When it is determined that the body part is not attempting to move the base or the fastening member, the operating mode is switched to the limitation mode. The free mode allows the fastening member to fasten the body part on the base and allows a brake to release limitations to the motions of the base. The limitation mode allows the fastening member to release the body part from being fastened and allows the brake to limit the motions of the base.

Abstract: “The invention provides a photoelectric conversion element manufacturing apparatus that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit which supplies plasma excitation gas to a plasma excitation region in the chamber, a pressure regulation unit which regulates pressure in the chamber, a second gas supply unit which supplies raw gas to a plasma diffusion region in the chamber, a microwave application unit which applies microwaves into the chamber, and a bias voltage application unit which selects and applies a substrate bias voltage to the substrate according to the type of gas.

Abstract: A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract: Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.

Abstract: In a multilayer wiring board 100 having a high-density wiring region and a high-frequency propagation region mounted in the same board, it is possible to propagate a signal frequency of 40 GHz or more in the high-frequency propagation region by using a resin material with a dissipation factor (tan ?) of less than 0.01 as a material of an insulating layer used at least in the high-frequency propagation region. The insulating layer is formed of a polymerizable composition which contains a cycloolefin monomer, a polymerization catalyst, a cross-linking agent, a bifunctional compound having two vinylidene groups, and a trifunctional compound having three vinylidene groups and in which the content ratio of the bifunctional compound and the trifunctional compound is 0.5 to 1.5 in terms of a weight ratio value (bifunctional compound/trifunctional compound).

Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

Abstract: Provided is a cathode body that comprises a cylindrical cup 30 as a base member, a barrier layer 303 provided on a surface of the cylindrical cup 30 and containing SiC, and a film formed on a surface of the barrier layer 303 and containing a boride of a rare earth element and that can prevent interdiffusion of a constituent element of the base member and the boride.

Abstract: A phosphor-containing cured silicone that is a cured silicone which has a structure represented by general formulae (1) and/or (2) and also has units selected from general formulae (3) and/or (4), the phosphor-containing cured silicone includes a phosphor and particles having units selected from general formulae (3) and/or (4): wherein R1 to R3 are each a hydrogen atom, a methyl group, an ethyl group or a propyl group; X represents a methylene group, a dimethylene group or a trimethylene group, and may be the same or different; and R4 to R6 are each a substituted or unsubstituted monovalent hydrocarbon group, and may be the same or different. An object of the present invention is to provide a cured silicone in which a phosphor is uniformly dispersed, the cured silicone is characterized in that a silicone material has good thermal resistance and lightfastness.

Abstract: When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.

Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.

Abstract: A method is provided for manufacturing a semiconductor device, wherein a p-type region and/or n-type pattern is formed on a surface of a semiconductor substrate, including ejecting at least one of etching paste, masking paste, doping paste, and electrode paste from an ejecting orifice of a nozzle toward the surface of the semiconductor substrate to form beads formed of the paste between the semiconductor substrate and the ejecting orifice and moving the semiconductor substrate relative to the nozzle thereby the paste is applied to the surface of the semiconductor substrate in a stripe shape.

Abstract: A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

Abstract: It is an object of the present invention to provide a wiring board plasma processing apparatus capable of improving throughput and achieving reduction in running cost while a sputtering process is employed in manufacturing a wiring board. The wiring board plasma processing apparatus of the present invention has, in a same plasma processing chamber, a surface processing portion provided with a plasma source and performing a pretreatment of a board to be processed, and a plurality of sputtering film forming portions forming a seed layer formed of a plurality of films.

Abstract: Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion.

Abstract: An object of this invention is to provide an electrodialyzer which is effective in saving electric power. According to this invention, there is provided an electrodialyzer which electrically dialyzes water to be processed while a voltage causing substantially no current to flow is applied between an anode and a cathode.

Abstract: A liquid sodium battery in which two electrode members sandwiching a partition wall formed of a Na-ion conducting solid substance are constructed by a metal having a work function whose absolute value is smaller than that of a work function of sodium and a metal having a work function whose absolute value is greater than that of the work function of sodium.

Abstract: In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.

Abstract: An object of the present invention is to improve a sputtering efficiency and a production efficiency in a magnetron sputtering method using a rectangular target. A magnetron sputtering apparatus 10 according to the present invention is a vertical-passing-type sputtering apparatus for performing a sputtering deposition process while moving (passing) substrate PL and PR in a state in which the substrates are vertically raised. The magnetron sputtering apparatus 10 is formed as a sputtering apparatus capable of simultaneously processing two substrates with a single or common magnetic field generation mechanism 42 and targets 12L and 12R of bilateral symmetry (symmetry between the upper target and the lower target in the drawing).

Abstract: A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular r