Abstract: A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.

Abstract: A gas-communicating body 11 having a pillar shape and pores communicated with each other in a gas-communicating direction is formed. A dense member 12 is formed of a material that is not gas-permeable, has a tube shape, and covers a lateral side of the gas-communicating body 11 so that the dense member and the lateral side of the gas-communicating body contact each other. A porous piece body 13 is formed by inserting the gas-communicating body into a hollow portion of the dense member, and then the porous piece body is sintered at a first temperature. A concave portion is formed on a top plate, and a gas flow path penetrating the top plate of which one end is connected to the concave portion is formed. The porous piece body is inserted into the concave portion, and then is entirely sintered at a temperature equal to or lower than the first temperature. Accordingly, the shower plate is formed.

Abstract: A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Abstract: In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

Abstract: During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.

Abstract: A sheet processing system comprises a plurality of sheet processing devices, a primary sheet conveyance path, a secondary sheet conveyance path, and a controller which controls the sheet processing devices. The controller uses the primary sheet conveyance path to execute one job, and uses the secondary sheet conveyance path to execute another job in parallel with that one job.

Abstract: The present invention relates to a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains a graphite powder and a carbon black, and in which a mixing ratio of the graphite powder to the carbon black is in the range of 25 to 85 parts by weight to 75 to 15 parts by weight; and a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains, as a main component, a carbon black having a dibutyl phthalate absorption of 60 mL/100 g or less and a nitrogen absorption specific surface area of 50 m2/g or less. The mixed powder for powder metallurgy of the invention is less in the dust generation and segregation of the carbon supply component. Additionally, when the mixed powder for powder metallurgy of the invention is used, a green compact and a sintered body excellent in the mechanical property can be produced.

Abstract: A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.

Abstract: A dielectric film wherein N in the state of an Si3=?N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH3, Xe/NH3, Kr/NH3, Ar/N2/H2, Xe/N2/H2 and Kr/N2/H2.

Abstract: A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.

Abstract: A hydraulic control apparatus for a single action cylinder includes a switch valve for supplying fluid to and draining fluid from the cylinder, a cylinder side passage connected to the cylinder, a switch valve side passage connected to the switch valve, and a valve body accommodation chamber. The valve body accommodation chamber linearly extends between the cylinder side passage and the switch valve side passage. An on-off valve is located in a vicinity of a first end of the valve body accommodation chamber. The on-off valve defines a first back pressure chamber. A flow control valve is located in a vicinity of a second end that is opposite to the first end. The flow control valve defines a second back pressure chamber. The on-off valve and the flow control valve are separated from each other by a partitioning member.

Abstract: A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate, wherein the waveguide has a single microwave output opening in a location corresponding to a central par of the microwave emitting member.

Abstract: A main spool is located in a bypass line connecting a pump line to a return line. The main spool moves in an axial direction according to the pressure in a spring chamber and the pressure in a pilot chamber, thereby adjusting the opening degree of the bypass line. A pilot switching valve is located in a pressure control passage connecting the spring chamber to the return line. The pilot switching valve controls the flow rate of hydraulic oil that flows from the spring chamber to the return line in accordance with the load pressure of a hydraulic actuator, thereby adjusting the pressure of hydraulic oil in the spring chamber. As a result, the range of the flow rate of hydraulic oil supplied to the hydraulic actuator, which range precludes the influence of the load pressure of the hydraulic actuator, is expanded.

Abstract: A hydraulic parking brake device is selectively switched between a braking state and a non-braking state. A braking force decreases as a pressure in the control oil chamber increases and increases as the pressure in the control oil chamber decreases. The device includes a discharged oil restrictor located in a discharge passage and an accumulator connected to the control oil chamber. The accumulator is capable of releasing hydraulic oil to the control oil chamber when the braking force is greater than that at the time when the parking brake device is switched from the non-braking state to the braking state and the braking force can further be increased during the braking state of the parking brake device. Thus, the parking brake device can gradually brake the vehicle from the running state.

Abstract: Plasma discharge occurs in the gas circulation space between the upper surface of a shower plate and the lower surface of a cover plate in partial contact with the shower plate, and the supplied microwave is uselessly consumed by this undesired discharge, thereby losing the power. A plasma processing apparatus comprises a shower plate having ejection holes for ejecting gas, a microwave antenna, and a cover plate interposed between the shower plate and the microwave antenna. The material of the cover plate has a relative dielectric constant smaller than that of the material of the shower plate.

Abstract: During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.

Abstract: A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.

Abstract: A reflector member of the present invention includes a silver thin film formed on a substrate and a silicon nitride protection film formed on the silver thin film. The silver thin film has the (111) orientation as the principal plane orientation. Preferably, 99% or more of the silver thin film has the (111) orientation as the principal plane orientation. The thickness of the silver thin film is in a range of 100 nm to 350 nm.

Abstract: A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.

Abstract: A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.