Patents by Inventor Tetsuya Goto

Tetsuya Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110300422
    Abstract: A liquid sodium battery in which two electrode members sandwiching a partition wall formed of a Na-ion conducting solid substance are constructed by a metal having a work function whose absolute value is smaller than that of a work function of sodium and a metal having a work function whose absolute value is greater than that of the work function of sodium.
    Type: Application
    Filed: February 15, 2010
    Publication date: December 8, 2011
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Masafumi Kitano
  • Publication number: 20110248323
    Abstract: In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.
    Type: Application
    Filed: December 10, 2009
    Publication date: October 13, 2011
    Applicant: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Publication number: 20110198219
    Abstract: An object of the present invention is to improve a sputtering efficiency and a production efficiency in a magnetron sputtering method using a rectangular target. A magnetron sputtering apparatus 10 according to the present invention is a vertical-passing-type sputtering apparatus for performing a sputtering deposition process while moving (passing) substrate PL and PR in a state in which the substrates are vertically raised. The magnetron sputtering apparatus 10 is formed as a sputtering apparatus capable of simultaneously processing two substrates with a single or common magnetic field generation mechanism 42 and targets 12L and 12R of bilateral symmetry (symmetry between the upper target and the lower target in the drawing).
    Type: Application
    Filed: October 9, 2009
    Publication date: August 18, 2011
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Publication number: 20110186425
    Abstract: A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular r
    Type: Application
    Filed: June 17, 2009
    Publication date: August 4, 2011
    Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Nobuaki Seki, Satoru Kawakami, Takaaki Matsuoka
  • Publication number: 20110169390
    Abstract: It is an object of the present invention to obtain a cathode body capable of maintaining a long service life even when a high current flows therethrough. According to the present invention, it is possible to obtain a magnetron cathode body including, as a base material, a high-melting-point metal containing an electron emission material, and rare-earth boride coating a surface thereof. As the electron emission material and the high-melting-point metal, La2O3 and W are desirable, respectively. As the rare-earth boride, LaB6 is preferable.
    Type: Application
    Filed: September 17, 2009
    Publication date: July 14, 2011
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Publication number: 20110114375
    Abstract: Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.
    Type: Application
    Filed: May 29, 2009
    Publication date: May 19, 2011
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Patent number: 7879182
    Abstract: A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: February 1, 2011
    Assignee: Foundation for Advancement of International Science
    Inventors: Tadahiro Ohmi, Masaki Hirayama, Tetsuya Goto
  • Publication number: 20110000533
    Abstract: It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor.
    Type: Application
    Filed: March 2, 2009
    Publication date: January 6, 2011
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Kouji Tanaka, Yuichi Sano
  • Publication number: 20110000783
    Abstract: Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate 10 to be processed and the plasma shielding member. Further, since a series resonant circuit is provided between a target and the ground, the RF power is efficiently supplied only to a region where the substrate passes under the target, so that a self-bias voltage is generated.
    Type: Application
    Filed: March 2, 2009
    Publication date: January 6, 2011
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Publication number: 20100288439
    Abstract: A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits.
    Type: Application
    Filed: August 21, 2008
    Publication date: November 18, 2010
    Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Kiyotaka Ishibashi, Tadahiro Ohmi, Tetsuya Goto, Masahiro Okesaku
  • Publication number: 20100275981
    Abstract: An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD.
    Type: Application
    Filed: December 12, 2008
    Publication date: November 4, 2010
    Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Tetsuya Goto, Kouji Tanaka
  • Publication number: 20100231118
    Abstract: An object of the present invention is to provide a cathode body having a high intensity, a high efficiency, and a long life. The cathode body of the present invention is manufactured by forming, on a cylindrical cup formed of a metal alloy containing lanthanum oxide and having a high thermal conductivity, a LaB6 film using a magnetron sputtering apparatus capable of sputtering at a low electron temperature.
    Type: Application
    Filed: September 12, 2008
    Publication date: September 16, 2010
    Inventors: Tadahiro Ohmi, Tetsuya Goto
  • Publication number: 20100230387
    Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.
    Type: Application
    Filed: June 13, 2007
    Publication date: September 16, 2010
    Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Masahiro Okesaku, Tetsuya Goto, Tadahiro Ohmi, Kiyotaka Ishibashi
  • Publication number: 20100178775
    Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
    Type: Application
    Filed: September 26, 2007
    Publication date: July 15, 2010
    Applicants: TOKYO ELECTRON LIMITED, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Masahiro Okesaku, Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka, Toshihisa Nozawa, Atsutoshi Inokuchi, Kiyotaka Ishibashi
  • Publication number: 20100126852
    Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.
    Type: Application
    Filed: March 28, 2008
    Publication date: May 27, 2010
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Publication number: 20100126848
    Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.
    Type: Application
    Filed: October 6, 2006
    Publication date: May 27, 2010
    Applicants: Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Publication number: 20100101945
    Abstract: In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus of this invention, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and a psubstrate to be processed is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.
    Type: Application
    Filed: March 14, 2008
    Publication date: April 29, 2010
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Publication number: 20100059368
    Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.
    Type: Application
    Filed: April 4, 2008
    Publication date: March 11, 2010
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 7670454
    Abstract: In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
    Type: Grant
    Filed: January 23, 2006
    Date of Patent: March 2, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Masaki Hirayama, Shigetoshi Sugawa, Tetsuya Goto
  • Publication number: 20100025821
    Abstract: When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
    Type: Application
    Filed: December 20, 2007
    Publication date: February 4, 2010
    Applicants: NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Akinobu Teramoto, Takaaki Matsuoka