Abstract: An image capturing device comprises a pixel array having a plurality of pixels each including a photoelectric conversion portion, a plurality of signal lines connected to the pixel array, a plurality of column amplifiers configured to respectively amplify signals transferred from the pixel array via the signal lines, the column amplifier comprising a first input terminal, a first output terminal, an amplifier having a second input terminal and a second output terminal, a feedback capacitance arranged between the second input terminal and the first output terminal, an input capacitance having an electrode connected to the first input terminal, and an electrode connected to the second input terminal, a first switch arranged between the second input terminal and the second output terminal, a second switch arranged between the first output terminal and the second output terminal, and a third switch arranged between a reference voltage terminal and the first output terminal.

Abstract: A solid-state imaging apparatus includes: a ramp signal generator for generating first and second time-changing ramp signals during first and second analog-to-digital conversion periods, respectively; comparators for comparing a reset signal of a pixel with the first ramp signal during the first analog-to-digital conversion period, and comparing a pixel signal with the second ramp signal during the second analog-to-digital conversion period; and memories for storing, as first and second digital data, count values of counting from a start of changing the first and second ramp signals until an inversion of outputs of the comparators, during the first and second analog-to-digital conversion periods, wherein the ramp signal generator supplies a current from a current generator to a first capacitor element by a sampling and holding operation of a switch, and generates the first and second ramp signals based on the same bias voltage held by the first capacitor element.

Abstract: A solid-state imaging apparatus includes a plurality of pixels arranged two-dimensionally in a matrix, a reference signal generating circuit adapted to generate a ramp signal, a counter circuit adapted to perform a counting operation according to output of the ramp signal, comparators arranged on a column by column basis and adapted to compare signals read out of the pixels with the ramp signal, and memories arranged on a column by column basis and adapted to store digital data, wherein if output of the comparator is not changed during an AD conversion period, digital data of a predetermined value is stored in the memory. The solid-state imaging apparatus implements overflow handling using a simplified circuit configuration.

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract: An image sensing apparatus comprises a pixel array; a readout unit; a first terminal; and a second terminal, wherein the readout unit including a column amplification unit, a holding unit, a first power supply line, and a second power supply line, and wherein the column amplification unit including a transistor having a gate electrode and back-gate electrode, the gate electrode receiving a signal read out from a pixel on each column of the pixel array, and the holding unit including a capacitor having a first electrode and a second electrode, the first electrode receiving a signal amplified by the column amplification unit, and wherein the first power supply line transfers the first power supply voltage to the back-gate electrode of the transistor, and the second power supply line transfers the second power supply voltage to the second electrode of the capacitor.

Abstract: A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal.

Abstract: An image sensing apparatus comprising on a single semiconductor substrate: a pixel array; a vertical scanning unit; a horizontal scanning unit; a counter which starts a counting operation to count the number of the clocks before a start of the first period, and stops the counting operation before a start of the second period during the first period; and a generation unit which generates a first control signal for causing the vertical scanning unit to drive a pixel, the generation unit including a signal generation unit which generates a second control signal in accordance with the counted value output from the counter, and a delay unit which delays the second control signal to generate the first control signal and output the first control signal to the vertical scanning unit.

Abstract: A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region.

Abstract: An image sensing device comprises: a pixel array that is arrayed such that pixels that output signals to column signal lines constitute a plurality of rows and a plurality of columns, and in which the plurality of pixels are connected to each of the plurality of column signal lines; a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal that has been read out via the column signal line; and a first load transistor that supplies an electric current to the input transistor, and a plurality of first bias supply units that supply mutually different bias voltages to gates of the first load transistors at least in readout units of the plurality of readout units and arranged adjacent to each other.

Abstract: A solid-state image pickup device includes a plurality of common output lines receiving signals from a plurality of pixels, a plurality of column amplifier units amplifying the signals, a plurality of storage capacitors storing the amplified signals, a first transistor controlling electrical conduction between the output node of the column amplifier unit and the input node of a storage capacitor, a switch switching current for operating the column amplifier unit between a first current and a second current smaller than the first current, and a controller inhibiting, while the second current is flowing through the column amplifier unit, a potential at the output node of the column amplifier unit from approaching an off-state voltage supplied to a gate of the first transistor in an OFF state of the first transistor.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: Dark current from a transfer transistor is suppressed and power-supply voltage in a second semiconductor substrate is lowered. A solid-state image pickup device includes a pixel array, a plurality of common output lines receiving signals read out from a plurality of pixels, a transfer scanning unit sequentially driving the plurality of transfer transistors, a signal processing unit processing the signals output to the common signal lines, and a level shift unit making amplitude of a pulse supplied to a gate of the transfer transistor larger than amplitude of a pulse supplied to a gate of a transistor constituting the signal processing unit. The pixel array and the level shift unit are arranged on a first semiconductor substrate, whereas the plurality of common output lines and the signal processing unit are arranged on a second semiconductor substrate.

Abstract: The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: An image sensing device including a pixel array having a plurality of pixels which form rows and columns. Each pixel is connected to one of a plurality of column signal lines. The image sensing device also includes a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal on the column signal line, a first load transistor that supplies an electric current to the input transistor, and a plurality of bias supply units that supply bias voltages to gates of the first load transistors of the plurality of readout units. The first load transistors of the readout units, which are arranged adjacent to each other, are each connected to different bias supply units.

Abstract: A solid-state image pickup device includes a pixel region including photoelectric conversion units, FDs, and transfer transistors, reset transistors, amplifier transistors, and a reference voltage supply line used to supply reference voltages to the photoelectric conversion units. In the device, the pixel region and the reference voltage supply line are disposed on a first semiconductor substrate, and at least the reset transistors or the amplifier transistors are disposed on a second semiconductor substrate. Furthermore, power supply lines used to supply voltages to the reference voltage supply line are disposed on the second semiconductor substrate. The device further includes second electric connection units which electrically connect the reference voltage supply line to the power supply line. The first electric connection units are disposed in the pixel region whereas the second electric connection units are disposed outside the pixel region.

Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region.