Abstract: A solid-state imaging apparatus includes a plurality of pixels arrayed in a matrix, and configured to generate signals by photoelectric conversion; a plurality of read-out circuits disposed on each column of the plurality of pixels arrayed in a matrix pattern, and configured to read out the signals from the plurality of pixels; a plurality of comparison units configured to compare the signals output from the plurality of read-out circuits with a reference signal whose level changes with time; a counter configured to count a clock signal after the level of the reference signal starts a change; a storage unit configured, when a magnitude relationship between the signals output from the plurality of the read-out circuits and the reference signal is reversed; and a reset unit configured to reset the count value stored in the storage unit.

Abstract: A solid-state imaging apparatus includes a pixel section in which a plurality of pixels are arranged in a matrix, a column signal line configured to output a pixel signal from the pixel section, a column amplifier circuit configured to invert and amplify the pixel signal, a bypass circuit configured to bypass the column amplifier circuit, an AD converter, and a control unit configured to change an operation mode of the AD converter in accordance with the operation of the bypass circuit.

Abstract: At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A solid-state imaging apparatus includes: a ramp signal generator for generating first and second time-changing ramp signals during first and second analog-to-digital conversion periods, respectively; comparators for comparing a reset signal of a pixel with the first ramp signal during the first analog-to-digital conversion period, and comparing a pixel signal with the second ramp signal during the second analog-to-digital conversion period; and memories for storing, as first and second digital data, count values of counting from a start of changing the first and second ramp signals until an inversion of outputs of the comparators, during the first and second analog-to-digital conversion periods, wherein the ramp signal generator supplies a current from a current generator to a first capacitor element by a sampling and holding operation of a switch, and generates the first and second ramp signals based on the same bias voltage held by the first capacitor element.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Abstract: A solid-state image pickup device includes a pixel region including photoelectric conversion units, FDs, and transfer transistors, reset transistors, amplifier transistors, and a reference voltage supply line used to supply reference voltages to the photoelectric conversion units. In the device, the pixel region and the reference voltage supply line are disposed on a first semiconductor substrate, and at least the reset transistors or the amplifier transistors are disposed on a second semiconductor substrate. Furthermore, power supply lines used to supply voltages to the reference voltage supply line are disposed on the second semiconductor substrate. The device further includes second electric connection units which electrically connect the reference voltage supply line to the power supply line. The first electric connection units are disposed in the pixel region whereas the second electric connection units are disposed outside the pixel region.

Abstract: An image capturing apparatus includes: plural pixels arranged in matrix, each outputting a signal from a photoelectric conversion element; and plural readout circuits each provided for a corresponding column of the pixels, signals from the pixels being input to the readout circuits. The readout circuit includes an amplifier unit configured to amplify the signal from the pixel, and have a variable gain, and a hold capacitance connected to an output terminal of the amplifier unit via a sampling switch, and having a variable capacitance value. When the variable gain of the amplifier unit is set to be a first gain, the variable capacitance value of the hold capacitance is set to be a first capacitance value. When the variable gain is set to be a second gain larger than the first gain, the variable capacitance value is set to be a second capacitance value smaller than the first capacitance value.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: Provided is a photoelectric conversion apparatus including: a pixel array having pixels arranged in matrix; a pixel output line provided according to each column of the pixel array and transmitting a pixel signal output from a pixel of each column of the pixel array; a column signal processing unit provided according to each column of the pixel array and into which the pixel signal is input from the pixel output line, in which the column signal processing unit has a plurality of horizontal adding up or averaging units configured to add up or average the plurality of pixel signals based on the pixels of different columns of the pixel array; and a plurality of adding up or averaging modes with different numbers of columns subjected to adding up or averaging can be selected by selectively using one or a plurality of the plurality of horizontal adding up or averaging units.

Abstract: A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Abstract: A solid-state imaging apparatus includes: a pixels in a matrix for generating a pixel signal; and A/D converting units, corresponding to columns of the matrix, to convert the pixel signal into a n-bit digital value. The A/D converting units includes first storage units for storing the n-bit digital value one bit by one bit, and second storage units corresponding to the first storage units, to hold the digital value transferred from the first storage unit. In each of the columns of the plurality of pixels, arranged corresponding thereto are the first storage units and the second storage units form n-pairs. Each pair including the first storage unit and the second storage unit hold the digital value of the same bit. The n-pairs are arrayed in a matrix.

Abstract: Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data.

Abstract: A photoelectric conversion apparatus includes, on one substrate, a pixel driving unit and a signal processing unit that includes a digital circuit configured to execute signal processing. A first voltage and a second voltage different in value from the first voltage are supplied to the digital circuit of the pixel driving unit. A third voltage and a fourth voltage different in value from the third voltage are supplied to the digital circuit of the signal processing unit. A main portion of a first conductor that supplies the first voltage to the digital circuit of the pixel driving unit and a main portion of a second conductor that supplies the third voltage to the digital circuit of the signal processing unit are isolated from each other.

Abstract: First processing of causing a hold unit to hold a first signal from an amplification unit based on reset of the amplification unit, second processing of performing AD conversion of the held first signal and outputting a second signal obtained by superposing a signal based on charges generated in a photoelectric conversion unit of a first-row pixel on the first signal, third processing of performing an operation of performing AD conversion of the held second signal and an operation of resetting the amplification unit at least partly in parallel, and fourth processing of causing the hold unit to hold a fourth signal obtained by superposing a signal based on charges generated in the photoelectric conversion unit of a second-row pixel on a third signal from the amplification unit based on resetting of the amplification unit and is output from the amplification unit are performed.

Abstract: Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data.

Abstract: The present invention relates to a solid-state image pickup device. The device includes a first substrate including a photoelectric conversion element and a transfer gate electrode configured to transfer charge from the photoelectric conversion element, a second substrate having a peripheral circuit portion including a circuit configured to read a signal based charge generated in the photoelectric conversion element, the first and second substrates being laminated. The device further includes a multilayer interconnect structure, disposed on the first substrate, including an aluminum interconnect and a multilayer interconnect structure, disposed on the second substrate, including a copper interconnect.

Abstract: A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal.

Abstract: A solid-state imaging apparatus comprises a plurality of matrix pixels, a reference signal generator for generating a ramp signal, a counter for performing counting according to the ramp signal output, and an AD converter, arranged for each pixel column, for performing AD conversion by comparing a pixel signal from the pixel with the ramp signal. Further, the AD converter includes a comparator to which the pixel signal and the reference signal are input, a storage for storing the AD conversion result, and an slope converter, between the output terminal of the reference signal generator and the input terminal of the comparator, for changing a gradient of the ramp signal, so that the noise overlaid on the ramp signal changes depending on the gradient of the ramp signal. Thus, it is possible to prevent generation of a horizontal-line noise in the ramp signal.