Abstract: The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Abstract: According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.

Abstract: It is possible to estimate an energy amount suitable for processing a substrate before the substrate is performed. There is provided a technique that includes: a processing structure configured to process a substrate based on at least one setting item in which process conditions for the substrate are defined; a manipulator configured to perform a setting operation for the process conditions of the at least one setting item; and a controller configured to be capable of controlling a calculation of an energy amount consumed under the process conditions which are set by the manipulator.

Abstract: According to the technique of the present disclosure, there is provided a heater comprising a heat generating element divided into at least a central portion and an outer peripheral portion. The heat generating element is configured to be capable of adjusting a heating amount of each of the central portion and the outer peripheral portion. End portions of the outer peripheral portion are not adjacent to outermost turnaround portions of the heat generating element. Further, turnaround portions of the heat generating element are not adjacent to the end portions in a direction outward from a center of the heat generating element in the outer peripheral portion of the heat generating element.

Abstract: According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.

Abstract: According to the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube accommodating therein a plurality of substrates vertically arranged; and a first heater configured to heat an inside of the reaction tube from an upper portion of the reaction tube, wherein a heat generating amount of the first heater in a region corresponding to a low temperature portion of an upper substrate among the plurality of the substrates accommodated in the reaction tube is greater than a heat generating amount of the first heater in a region corresponding to a high temperature portion of the upper substrate.

Abstract: There is provided a technique that includes: a heat generator installed for each of control zones and configured to raise an internal temperature of a reaction tube by heat generation; a circuit configured to equalize resistance values in the respective control zones, wherein the circuit is a parallel circuit and is configured such that an output variable element is installed in one or more of output circuits constituting the parallel circuit.

Abstract: There is provided a technique that includes: a heat generator installed for each of control zones and configured to raise an internal temperature of a reaction tube by heat generation; a circuit configured to equalize resistance values in the respective control zones, wherein the circuit is a parallel circuit and is configured such that an output variable element is installed in one or more of output circuits constituting the parallel circuit.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: To suppress deformation of a heating element, there is provided a technique that includes: a disk-shaped base structure; and a heating element continuously extending to cover multiple regions of the base structure, wherein a circle centered on a center of the base structure is divided into fan shapes by the regions. A portion of the heating element in each of the plurality of regions is connected to another portion of the heating element in an adjacent region thereof at a predetermined location. The base structure includes a groove corresponding to a shape of the heating element, a wall is formed on an area of the base structure other than where the groove is located, and an interval between portions of the heating element located in two adjacent regions among the plurality of regions is set to be wider than a width of the wall separating the two adjacent regions.

Abstract: There is provided a technique that includes: a reaction tube where a process chamber configured to process a substrate is formed; a heater structure including a heater heating the substrate; a cooler including a cooling valve supplying a cooling medium; an exhaust fan supplying the cooling medium to the cooler; and a cooling controller configured to: acquire a prediction model that includes information of the exhaust fan, final target temperature, and opening state of the cooling valve and estimates a predicted temperature predicting at least one selected from the group of a temperature of the heater and a temperature of the process chamber; acquire the at least one selected from the group of the temperature of the heater and the temperature of the process chamber, the opening state of the cooling valve, and the information of the exhaust fan; and regulate the opening state of the cooling valve.

Abstract: There is provided a configuration installed on a mount provided with an opening, that includes a main body connected to the mount to penetrate the opening while providing a micro space; a first positioner attached to a side of a leading end portion of the main body with respect to the mount; and a second positioner attached to a side of a tail end portion of the main body with respect to the mount, wherein the main body is movable within a range determined by the micro space, the first positioner, and the second positioner.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.