Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Abstract: A ceiling heat insulator installed above a side wall heat insulator of a heating apparatus for a substrate processing apparatus for processing a substrate is provided. The ceiling heat insulator includes a gas-flow path installed therein to allow a cooling gas to pass therethrough so that the ceiling heat insulator has a solid cross-sectional area in an outer edge side of the ceiling heat insulator that is smaller than that in a center side of the ceiling heat insulator.

Abstract: There is provided a cooling unit, comprising: an intake pipe provided for each of a plurality of zones and configured to supply a gas for cooling a reaction tube; a control valve provided in the intake pipe and configured to adjust a flow rate of the gas; a buffer part configured to temporarily store the gas supplied from the intake pipe; and openings provided so as to blow the gas stored in the buffer part toward the reaction tube, wherein the flow rate of the gas introduced into the intake pipe is set according to vertical length ratios of the zones such that the flow rate and a flow velocity of the gas injected from the openings toward the reaction tube are adjusted by opening and closing the control valve.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: To reduce a temperature deviation on a surface of a substrate and shorten a temperature recovery time on the surface of the substrate, a substrate processing apparatus is provided. The substrate processing apparatus includes a substrate retainer configured to accommodate a plurality of substrates and heat insulating plates; a reaction tube within the substrate retainer; and a heating mechanism configured to heat the plurality of substrates, wherein the substrate retainer includes a substrate processing region where the plurality of substrates are accommodated and a heat insulating plate region where the heat insulating plates are accommodated. A reflectivity of each of the first heat insulating plates is accommodated in an upper layer portion of the heat insulating plate region and is higher than a reflectivity of each of the second heat insulating plates accommodated in a region other than the upper layer portion of the heat insulating plate region.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.

Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.

Abstract: A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

Abstract: A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.

Abstract: A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.