Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: A pillar-shaped memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. Other aspects are also provided.

Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract: A hybrid circuit (42) for use with communications transceivers. The hybrid circuit (42) combines the function of an ESD protection circuit (12) with the function of a TX/RX switch (10). The input node of the hybrid circuit (42) is connecting between the source of an ESD event (60) and a device to be protected (44). The hybrid circuit (42) includes an ESD protection element (50), which is triggered by a triggering transistor (52). The gate of the triggering transistor (52) is connected to a driver (54) for turning the triggering transistor (52) on during transmission and for turning the triggering transistor (52) off during reception.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.

Abstract: A calibration circuit (20, 50) and method (60) for calibrating the bias current of a VCO (10, 40) to minimize phase noise. The calibration circuit (20, 50) monitors the average voltage at the common-mode node of the VCO (10, 40) while varying the bias current over a predetermined range. The calibration circuit (20, 50) identifies the bias current associated with the minimum average common-mode voltage and utilizes this bias current for calibrating the biasing transistor of the VCO (10, 40).

Abstract: A calibration circuit (20, 50) and method (60) for calibrating the bias current of a VCO (10, 40) to minimize phase noise. The calibration circuit (20, 50) monitors the average voltage at the common-mode node of the VCO (10, 40) while varying the bias current over a predetermined range. The calibration circuit (20, 50) identifies the bias current associated with the minimum average common-mode voltage and utilizes this bias current for calibrating the biasing transistor of the VCO (10, 40).

Abstract: A wireless (such as Wi-Fi or similar) access point is included in or attached to a device, such as a cellular phone, WiMAX device, other mobile device, etc. One or more wireless units wirelessly access a communication network (and in some cases the Internet) through the wireless access point device. Additionally, such a wireless access point device can receive a transmission from a wireless tag that has been attached to an object to be monitored and can forward information from the wireless tag to a target device along with location information.

Abstract: An amplifier circuit and method for amplifying a signal efficiently over a plurality of power ranges. The amplifier circuit including a strong amplifier which is efficient over a first power range and a weak amplifier which is efficient over a second power range. An impedance transformation circuit is used for generating a higher potential and providing increased efficiency when the second range of power is present. A circuit biases active the strong amplifier when the first power range of is present and biases active the weak amplifier when the second power range is present.

Abstract: A differential diversity antenna is provided. In one embodiment, a differential diversity antenna is used in a wireless system comprising receiver circuitry. (and, in another embodiment, transmission circuitry). The differential diversity antenna comprises a plurality of antenna components that are aligned non-collinearly to achieve diversity. In another embodiment, the differential diversity antenna is used with a second differential diversity antenna. Other embodiments are disclosed, and each of the embodiments can be used alone or together in combination.

Abstract: An amplifier circuit and method for amplifying a signal efficiently over a plurality of power ranges. The amplifier circuit including a strong amplifier which is efficient over a first power range and a weak amplifier which is efficient over a second power range. An impedance transformation circuit is used for generating a higher potential and providing increased efficiency when the second range of power is present. A circuit biases active the strong amplifier when the first power range of is present and biases active the weak amplifier when the second power range is present.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.