Patents by Inventor Thomas Langdo

Thomas Langdo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
    Patent number: 8324660
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Grant
    Filed: July 28, 2010
    Date of Patent: December 4, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • DEVICES, SYSTEMS, AND METHODS FOR CONTROLLING THE TEMPERATURE OF RESONANT ELEMENTS
    Publication number: 20120299662
    Abstract: A thermoelectric device transfers heat away from or toward an object using the Peltier effect. In some embodiments, the length of at least one thermoelectric element is at least ten times greater than a combined average cross-sectional dimension, orthogonal to the length, of two thermoelectric elements.
    Type: Application
    Filed: August 6, 2012
    Publication date: November 29, 2012
    Inventors: Stanley R. Shanfield, Thomas A. Langdo, Marc S. Weinberg, Albert C. Imhoff
  • Interposers, electronic modules, and methods for forming the same
    Patent number: 8273603
    Abstract: In accordance with a method for forming an interposer, a fill hole is formed in a first side of a substrate and a cavity is formed in a second side. The cavity is in fluidic communication with the fill hole. A plurality of posts is formed in the cavity, and an encapsulant is injected through the fill hole into the cavity to encapsulate the plurality of posts. In accordance with a method of thermal management, an electronic component and a heat sink are disposed on opposing sides of an interposer that includes a plurality of encapsulated posts.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: September 25, 2012
    Assignee: The Charles Stark Draper Laboratory, Inc.
    Inventors: Livia M. Racz, Gary B. Tepolt, Jeffrey C. Thompson, Thomas A. Langdo, Andrew J. Mueller
  • Devices, systems, and methods for controlling the temperature of resonant elements
    Patent number: 8248173
    Abstract: A thermoelectric device transfers heat away from or toward an object using the Peltier effect. In some embodiments, the length of at least one thermoelectric element is at least ten times greater than a combined average cross-sectional dimension, orthogonal to the length, of two thermoelectric elements.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: August 21, 2012
    Assignee: The Charles Stark Draper Laboratory, Inc.
    Inventors: Stanley R. Shanfield, Thomas A. Langdo, Marc S. Weinberg, Albert C. Imhoff
  • Method of producing high quality relaxed silicon germanium layers
    Patent number: 8187379
    Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: May 29, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eugene Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher J. Vineis, Thomas A. Langdo
  • Water purification and enhancement systems
    Publication number: 20120125203
    Abstract: Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.
    Type: Application
    Filed: August 22, 2011
    Publication date: May 24, 2012
    Applicant: THE WATER INITIATIVE, LLC
    Inventors: Eugene A. Fitzgerald, Ya-Hong Xie, Thomas Langdo, Richard Renjilian, Carl V. Thompson
  • INTERPOSERS, ELECTRONIC MODULES, AND METHODS FOR FORMING THE SAME
    Publication number: 20120086135
    Abstract: In various embodiments, an electronic module features a first cavity in a first side of a substrate, a fill hole extending from the first cavity, and a second cavity in a second side of the substrate. The second cavity is in fluidic communication with the fill hole, and a die is encapsulated within the second cavity.
    Type: Application
    Filed: October 6, 2011
    Publication date: April 12, 2012
    Inventors: Jeffrey C. Thompson, Livia M. Racz, Gary B. Tepolt, Thomas A. Langdo, Andrew J. Mueller
  • Low-cost high-density rectifier matrix memory
    Patent number: 8116109
    Abstract: A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: February 14, 2012
    Inventors: Daniel R. Shepard, Thomas A. Langdo, Arthur J. Pitera
  • METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20110318893
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: September 7, 2011
    Publication date: December 29, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald
  • Electronic Modules and Methods for Forming the Same
    Publication number: 20110309528
    Abstract: Electronic modules are formed by encapsulating microelectronic dies within cavities in a substrate.
    Type: Application
    Filed: August 31, 2011
    Publication date: December 22, 2011
    Inventors: Livia M. Racz, Gary B. Tepolt, Jeffrey C. Thompson, Thomas A. Langdo, Andrew J. Mueller
  • DEVICES, SYSTEMS, AND METHODS FOR CONTROLLING THE TEMPERATURE OF RESONANT ELEMENTS
    Publication number: 20110260800
    Abstract: A thermoelectric device transfers heat away from or toward an object using the Peltier effect. In some embodiments, the length of at least one thermoelectric element is at least ten times greater than a combined average cross-sectional dimension, orthogonal to the length, of two thermoelectric elements.
    Type: Application
    Filed: April 27, 2010
    Publication date: October 27, 2011
    Inventors: Stanley R. Shanfield, Thomas A. Langdo, Marc S. Weinberg, Albert C. Imhoff
  • III-V semiconductor device structures
    Patent number: 8026534
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: September 27, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald
  • Electronic modules and methods for forming the same
    Patent number: 8017451
    Abstract: Electronic modules are formed by encapsulating microelectronic dies within cavities in a substrate.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: September 13, 2011
    Assignee: The Charles Stark Draper Laboratory, Inc.
    Inventors: Livia M. Racz, Gary B. Tepolt, Jeffrey C. Thompson, Thomas A. Langdo, Andrew J. Mueller
  • Method of Producing High Quality Relaxed Silicon Germanium Layers
    Publication number: 20110177681
    Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
    Type: Application
    Filed: March 29, 2011
    Publication date: July 21, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher J. Vineis, Thomas A. Langdo
  • Method of producing high quality relaxed silicon germanium layers
    Patent number: 7955435
    Abstract: A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: June 7, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eugene Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher J. Vineis, Thomas A. Langdo
  • Low cost, high-density rectifier matrix memory
    Patent number: 7933133
    Abstract: A high-density memory device is fabricated three-dimensionally in layers. To keep points of failure low, address decoding circuits are included within each layer so that, in addition to power and data lines, only the address signal lines need be interconnected between the layers.
    Type: Grant
    Filed: November 5, 2008
    Date of Patent: April 26, 2011
    Assignee: Contour Semiconductor, Inc.
    Inventors: Daniel R. Shepard, Thomas A. Langdo, Arthur J. Pitera
  • III-V Semiconductor Device Structures
    Publication number: 20110073908
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: October 19, 2010
    Publication date: March 31, 2011
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald
  • Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
    Publication number: 20110049568
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Application
    Filed: July 28, 2010
    Publication date: March 3, 2011
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • Methods for forming III-V semiconductor device structures
    Patent number: 7838392
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Grant
    Filed: November 20, 2007
    Date of Patent: November 23, 2010
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald
  • Method of Producing High Quality Relaxed Silicon Germanium Layers
    Publication number: 20100206216
    Abstract: A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.
    Type: Application
    Filed: February 24, 2010
    Publication date: August 19, 2010
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher J. Vineis, Thomas A. Langdo