Patents by Inventor Thomas Langdo

Thomas Langdo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming structures including strained-semiconductor-on-insulator devices
    Publication number: 20060197126
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 2, 2006
    Publication date: September 7, 2006
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Glyn Braithwaite, Eugene Fitzgerald
  • Methods for forming strained-semiconductor-on-insulator bipolar device structures
    Publication number: 20060197123
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 1, 2006
    Publication date: September 7, 2006
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Glyn Braithwaite, Eugene Fitzgerald
  • Methods for forming double gate strained-semiconductor-on-insulator device structures
    Publication number: 20060197125
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 2, 2006
    Publication date: September 7, 2006
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Glyn Braithwaite, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Double gate strained-semiconductor-on-insulator device structures
    Publication number: 20060197124
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 1, 2006
    Publication date: September 7, 2006
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Glyn Braithwaite, Eugene Fitzgerald
  • Strained-semiconductor-on-insulator bipolar device structures
    Publication number: 20060186510
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: April 27, 2006
    Publication date: August 24, 2006
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Glyn Braithwaite, Eugene Fitzgerald
  • Method of producing high quality relaxed silicon germanium layers
    Publication number: 20060174818
    Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
    Type: Application
    Filed: March 9, 2006
    Publication date: August 10, 2006
    Applicant: AmberWave Systems
    Inventors: Eugene Fitzgerald, Richard Westhoff, Matthew Currie, Christopher Vineis, Thomas Langdo
  • Methods of forming strained-semiconductor-on-insulator finFET device structures
    Patent number: 7074623
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Grant
    Filed: June 6, 2003
    Date of Patent: July 11, 2006
    Assignee: AmberWave Systems Corporation
    Inventors: Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Glyn Braithwaite, Eugene A. Fitzgerald
  • Method of producing high quality relaxed silicon germanium layers
    Patent number: 7041170
    Abstract: A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: May 9, 2006
    Assignee: AmberWave Systems Corporation
    Inventors: Eugene A. Fitzgerald, Richard Westhoff, Matthew T. Currie, Christopher J. Vineis, Thomas A. Langdo
  • Strained-semiconductor-on-insulator device structures
    Patent number: 6995430
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Grant
    Filed: June 6, 2003
    Date of Patent: February 7, 2006
    Assignee: AmberWave Systems Corporation
    Inventors: Thomas A. Langdo, Matthew T. Currie, Richard Hammond, Anthony J. Lochtefeld, Eugene A. Fitzgerald
  • Strained-semiconductor-on-insulator finFET device structures
    Publication number: 20050280103
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: August 25, 2005
    Publication date: December 22, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Glyn Braithwaite, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Strained-semiconductor-on-insulator device structures with elevated source/drain regions
    Publication number: 20050218453
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 10, 2005
    Publication date: October 6, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
    Publication number: 20050212061
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 12, 2005
    Publication date: September 29, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Matthew Currie, Richard Hammond, Anthony Lochtefeld, Eugene Fitzgerald
  • Strained germanium-on-insulator device structures
    Publication number: 20050205934
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 11, 2005
    Publication date: September 22, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Gurrie, Eugene Fitzgerald
  • Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
    Patent number: 6946371
    Abstract: Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: September 20, 2005
    Assignee: Amberwave Systems Corporation
    Inventors: Thomas A. Langdo, Anthony J. Lochtefeld
  • Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
    Publication number: 20050199954
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 13, 2005
    Publication date: September 15, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald
  • Strained-semiconductor-on-insulator device structures
    Publication number: 20050189563
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 3, 2005
    Publication date: September 1, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald
  • Source and drain elements
    Publication number: 20050176204
    Abstract: Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.
    Type: Application
    Filed: April 12, 2005
    Publication date: August 11, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas Langdo, Anthony Lochtefeld
  • METHODS OF FORMING STRAINED-SEMICONDUCTOR-ON-INSULATOR DEVICE STRUCTURES
    Publication number: 20050156246
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: March 7, 2005
    Publication date: July 21, 2005
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony Lochtefeld, Thomas Langdo, Richard Hammond, Matthew Currie, Eugene Fitzgerald
  • Source and drain elements
    Publication number: 20040045499
    Abstract: Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.
    Type: Application
    Filed: June 10, 2003
    Publication date: March 11, 2004
    Applicant: AmberWave Systems Corporation
    Inventors: Thomas A. Langdo, Anthony J. Lochtefeld
  • Strained-semiconductor-on-insulator device structures
    Publication number: 20040031979
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: June 6, 2003
    Publication date: February 19, 2004
    Applicant: AmberWave Systems Corporation
    Inventors: Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Glyn Braithwaite, Eugene A. Fitzgerald