Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for data access in response to a host discard command. The method includes: allocating space in a random access memory (RAM) for an expanded discard table; receiving the host discard command from a host side; appending new entries each including one first logical address to the expanded discard table; and setting a start-address register and/or an end-address register in a performance engine for redefining an address range in the RAM that stores the expanded discard table, thereby enabling the performance engine to search the expanded discard table in the address range in the RAM for determining whether a specific logical address of user data is no longer used.

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Abstract: The present invention provides compositions comprising therapeutic nucleic acids such as siRNA that target ApoC3 and ANGPTL3 expression, lipid particles comprising one or more (e.g., a combination) of the therapeutic nucleic acids, and methods of delivering and/or administering the lipid particles (e.g., for treating hypertriglyceridemia in humans).

Abstract: The invention is related to an apparatus and a method for driving redundant array of independent disks (RAID) engine. The method, performed by a RAID controller in a RAID pre-processor, including: completing a driving operation for performing a series of physical-layer signal interactions with a RAID engine according to a driving value in the configuration register. The driving value corresponds to a command issued by a processing unit. The processing unit performs an operation irrelevant from an encoding or a decoding of a parity of a page group in parallel of the driving operation by the RAID controller in coordination with the RAID engine.

Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature, and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

Abstract: A memory controller coupled to a memory device and a host device and configured to control access operations of the memory device includes a buffer memory, a host interface, a microprocessor and a data protection engine. The host interface is coupled to the host device and configured to write data received from the host device into the buffer memory and issue a buffer memory write complete notification after the data has been written in the buffer memory. The microprocessor is configured to trigger a data protection operation in response to the buffer memory write complete notification. The protection engine is configured to perform the data protection operation to generate corresponding protection information according to the data written in the buffer memory. The microprocessor is configured to directly trigger the data protection operation after confirming that the data has been written in the buffer memory.

Abstract: An optical lens includes an aperture, a first lens, a second lens, a third lens, and a fourth lens sequentially in a direction. One of the first lens and the second lens has positive refracting power, and the other has negative refracting power. The third lens has refracting power, and is a lens with a largest diameter in the optical lens. The fourth lens has the refracting power. The four lenses are made of glass. For light having a wavelength of 1315 nm, a transmittance of the optical lens is greater than ninety percent.

Abstract: The invention relates to a method and an apparatus for programming data into flash memory. The method includes: obtaining, by the accelerator, an execution table indicating that data related to the first virtual carrier need to go through a mid-end and a back-end processing stages earlier than data related to other virtual carriers; driving, by the routing engine, a host interface (I/F) to obtain data associated with all cargos in the second virtual carrier, updating the second cargo flags with third cargo flags to indicate that data associated with all the cargos in the second virtual carrier are prepared in the front-end processing stage; and determining, by the accelerator, that data associated with any cargo in the first virtual carrier hasn’t been prepared according to information of the first cargo flags, and disallowing the second virtual carrier to proceed to the following processing stages.

Abstract: The invention relates to a method, and an apparatus for programming data into flash memory. The method includes: driving, by the routing engine, a host interface (I/F) according to the front-end parameter set when determining that a front-end processing stage needs to be activated for the data-programming transaction; driving, by the accelerator, a Redundant Array of Independent Disks (RAID) engine according to the mid-end parameter set when receiving an activation message of the data-programming transaction from the routing engine and determining that a mid-end processing stage needs to be activated; and driving, by the accelerator, a data access engine according to the back-end parameter set when determining that the mid-end processing stage for the data-write transaction does not need to be activated or the mid-end processing stage for the data-write transaction has been completed, and a back-end processing stage for the data-write transaction needs to be activated.

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for programming data into flash memory. The method includes: generating a front-end parameter set, a mid-end parameter set and a back-end parameter set for each data-programming transaction; transmitting the front-end parameter set of each data-programming transaction to a routing engine, thereby enabling the routing engine to drive a host interface (I/F) to obtain from the host side; transmitting the mid-end parameter set of each data-programming transaction to an accelerator, thereby enabling the accelerator to drive the RAID engine to encrypt raw data or generate parity-page data according to multiple pages of the raw data; and transmitting the back-end parameter set of each data-programming transaction to the accelerator, thereby enabling the accelerator to drive a data access engine to program source data into a designated physical address of a flash module.

Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.

Abstract: The invention relates to a method, and an apparatus for programming data into flash memory. The method includes: reading operating settings of a virtual carrier; setting a redundant array of independent disks (RAID) engine for driving the RAID engine to complete a designated encryption or encoding operation on first data associated with the virtual carrier when the operation settings indicate that the first data associated with the virtual carrier need to go through a mid-end processing stage; and sending a programming index to a data access engine for driving the data access engine to read a programming table from the SRAM, and program the second data associated with the virtual carrier into a designated address in a flash module when the operation settings indicate that the second data associated with the virtual carrier need to go through the back-end processing stage.

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for accessing to encoding-history information. The method includes: providing a super-block formed by storage space of flash units, where the super-block includes zones, each zone includes super-page strings, and each super-page string includes pages across the flash units; and programming encoding-history information into a metadata section of a designated first page of a designated super-page string, thereby enabling a damaged page that is occurred in the designated super-page string of the designated zone to be recovered according to the encoding-history information. The encoding-history information includes a history profile and history entries. The history profile indicates which zone or zones are covered in the super-block, and a quantity of the history entries.

Abstract: Provided is a method for testing a perovskite precursor solution, including: taking a perovskite precursor solution containing a plurality of dispersed perovskite colloids as a sample to perform liquid analysis, thereby obtaining an analysis information; and determining whether the perovskite precursor solution is a good product based on obtained analysis information from the liquid analysis, wherein the analysis information is at least one selected from the group consisting of element content of the colloid, element distribution, colloid size, and colloid appearance, thereby a feasible and effective testing method is defined through the correlation between the perovskite precursor colloid and the perovskite.

Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: A floatation device is provided. In some embodiments, a floatation device is provided, comprising an inflatable ring composed of a transparent material, wherein the inflatable ring includes: an outer air chamber having a first valve for inflating the outer air chamber; an inner air chamber having a second valve for inflating the inner air chamber, wherein the outer air chamber and the inner air chamber are not in communication; a cut through the outer air chamber and the inner air chamber of the inflatable ring that forms opposing ends of the inflatable ring; and a plurality of fasteners placed on a top surface and a bottom surface of the outer or inner air chamber for detachably connecting the opposing ends of the inflatable ring.

Abstract: An analog front-end device includes an amplifier circuit, a first gain control circuit, and a tracking circuit. The amplifier circuit is configured to generate a first output signal according to a first input signal. The first gain control circuit is configured to set a first electronic component according to a first gain control signal and transmit the first input signal to a first input terminal of the amplifier circuit via the first electronic component, in which a terminal of the first electronic component is selectively coupled to the first input terminal or a first predetermined node. The tracking circuit is configured to adjust a level of the first predetermined node according to a level of the first input terminal, in order to reduce a voltage difference between the first input terminal and the first predetermined node.

Abstract: A nanonetwork with controlled chirality prepared via self-assembly of triblock terpolymers, wherein each of the triblock terpolymers includes a first block, a second block and a third block. The first block is connected to the second block, and the third block is connected to the second block. The first block, the second block and the third block are incompatible. The third block has a homochiral characteristic, and a chirality of the nanonetwork with controlled chirality is determined by the homochiral characteristic.

Abstract: A method of forming a semiconductor device includes: forming a semiconductor feature over a substrate, the semiconductor feature includes a conductive region; forming a dielectric layer over the semiconductor feature; patterning the dielectric layer to form a contact opening exposing a top surface of the conductive region; forming a monolayer over the dielectric layer, the top surface of the conductive region remaining exposed; and depositing a conductive material in the contact opening.