Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

Abstract: A contact lens and a method of manufacturing the same are provided. The contact lens includes a contact lens body and a blue light blocking material covering the contact lens body. The blue light blocking material includes a plurality of metal particles dispersed on the contact lens body. The present invention includes compositions of at least one compound including metal ion with at least one or more reducing factors. The interactions between reducing factors endow contact lens body with homogeneous or pupil-regional preference of metal particles distribution with enhanced or decreased efficacy of blue light blocking. A further modification strengthens surface properties of contact lens including contact angle, water break-up time and long-term protein depositions.

Abstract: A contact lens and a method of manufacturing the same are provided. The contact lens includes a contact lens body and a blue light blocking material. The blue light blocking material covers the contact lens body. The blue light blocking material includes a plurality of metal particles dispersed on the contact lens body. The contact lens has good blue light blocking efficacy and surface properties.

Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

Abstract: The invention relates to the synthesis of boronic ester and acid compounds. More particularly, the invention provides improved synthetic processes for the large-scale production of boronic ester and acid compounds, including the peptide boronic acid proteasome inhibitor bortezomib.

Abstract: An optical measurement apparatus includes a thermal insulation housing, a first light-transmissive plate, a second light-transmissive plate, a heat-conductive layer, a cooling source and a photosensor. The thermal insulation housing, the first light-transmissive plate and the second light-transmissive plate define a chamber. The heat-conductive layer is disposed in the chamber, the cooling source is coupled to the heat-conductive layer, and the photosensor is disposed outside the chamber and on one side of the second light-transmissive plate facing away from the first light-transmissive plate.

Abstract: A memory controller coupled to a memory device and configured to control access operations of the memory device includes a data protection engine and a microprocessor. The data protection engine is configured to generate protection information according to data received from a host device. The microprocessor is configured to detect a status of the memory device in response to one or more write operations for writing the data to the memory device, determine whether a portion of the data has to be excluded when generating the protection information corresponding to the data according to the status and accordingly generate a determination result, and store the protection information and the determination result together in the memory device. The determination result indicates which portion of the data is utilized to generate the protection information.

Abstract: A memory controller coupled to a memory device and a host device and configured to control access operations of the memory device includes a buffer memory, a host interface, a microprocessor and a data protection engine. The host interface is coupled to the host device and configured to write data received from the host device into the buffer memory and issue a buffer memory write complete notification after the data has been written in the buffer memory. The microprocessor is configured to trigger a data protection operation in response to the buffer memory write complete notification. The protection engine is configured to perform the data protection operation to generate corresponding protection information according to the data written in the buffer memory. The microprocessor is configured to directly trigger the data protection operation after confirming that the data has been written in the buffer memory.

Abstract: A method of manufacturing an electronic device includes providing a core dielectric layer with two conductive layers formed on two opposite surfaces of the core dielectric layer, and removing at least a portion of each of the two conductive layers to respectively form an antenna pattern and a circuit pattern of a chip package at the two opposite surfaces of the core dielectric layer.

Abstract: An optical lens includes a first lens group, an aperture, and a second lens group which are sequentially arranged along an optical axis from a magnified side to a minified side. The first lens group has a negative refractive power and includes three lenses with refractive powers. The first lens group includes a lens with positive refractive power. The first lens group includes an aspheric lens. The second lens group has a positive refractive power and includes three lenses with refractive power. The second lens group includes a lens with a negative refractive power. The second lens group includes a lens closest to the minified side which is a cemented lens. The second lens group includes an aspheric lens. In the optical lens, a number of the lenses having the refractive powers is within a range from 6 to 8.

Abstract: The invention introduces a method for executing host input-output (IO) commands, performed by a processing unit of a device side, at least including: in response to different types of host IO commands, using multiple stages of a generic framework to drive a frontend interface to interact with a host side for transmitting user data read from a storage unit to the host side, and receiving user data to be programmed into the storage unit from the host side. The frontend interface includes a register, and a data line coupled to the host side. The stages of the generic framework are used to access to the register of the frontend interface and operate the data line of the frontend interface to complete interactions with the host side.

Abstract: The invention introduces a method for executing host input-output (IO) commands, performed by a processing unit of a device side, at least including: in response to different types of host IO commands, using multiple stages of a generic framework to drive a frontend interface to interact with a host side for transmitting user data read from a storage unit to the host side, and receiving user data to be programmed into the storage unit from the host side.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, a core dielectric layer disposed on the chip package, and an antenna pattern disposed on the core dielectric layer opposite to the chip package. The chip package includes a semiconductor chip, an insulating encapsulation encapsulating the semiconductor chip, and a redistribution structure electrically coupled to the semiconductor chip. The redistribution structure includes a first circuit pattern located at an outermost side of the chip package, and a patterned dielectric layer disposed between the first circuit pattern and the insulating encapsulation. The core dielectric layer is in contact with the first circuit pattern. The core dielectric layer and the patterned dielectric layer are of different materials. The antenna pattern is electrically coupled to the chip package.

Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: The invention relates to the synthesis of boronic ester and acid compounds. More particularly, the invention provides improved synthetic processes for the large-scale production of boronic ester and acid compounds, including the peptide boronic acid proteasome inhibitor bortezomib.

Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.

Abstract: The invention introduces an apparatus for controlling data access that includes a memory, an access interface and a processing unit. The processing unit is arranged to operably receive logical-to-physical (L2P) mapping information corresponding to a programming operation through the access interface and store the L2P mapping information in the memory; searching the L2P mapping information to obtain a first logical address associated with user data stored in space of each physical address and a second logical address associated with user data stored in space of each next physical address; generating content of a plurality of entries of a link-based L2P mapping sub-table in the order of logical addresses, wherein each entry of the link-based L2P mapping sub-table stores information about a physical address and a second logical address associated with a corresponding first logical address; and store the link-based L2P mapping sub-table.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: A fast index creation system for a cloud big data database electrically and communicatively coupled to a cloud non-relational database for inquiring and creating an index includes an application exchange module, a data exchange module, a first processing module, a second processing module and an integrated processing module. The application exchange module receives a query string inputted by a user and prompts a result index table. The data exchange module has a temporary index table. The first processing module computes the query string and generates a query instruction to compute a temporary index table for comparison and check if there is any data matched with the query instruction. If yes, then the first processing module will generate a cache index table, or else the first module will generate a create instruction provided for the second processing module to compute a non-relational database and generate a new index table.