Abstract: Structures for a skip via and methods of forming a skip via in an interconnect structure. A metallization level is formed that includes a dielectric layer with a top surface. An opening is formed that extends vertically from the top surface of the dielectric layer into the dielectric layer. A dielectric cap layer is deposited on a bottom surface of the opening. A fill layer is formed inside the opening and extends from the top surface of the dielectric layer to the dielectric cap layer on the bottom surface of the opening. A via opening is etched that extends vertically through the fill layer to the dielectric cap layer on the bottom surface of the opening.

Abstract: Methods of forming non-mandrel cuts. A dielectric layer is formed on a metal hardmask layer, and a patterned sacrificial layer is formed on the dielectric layer. The dielectric layer is etched to form a non-mandrel cut in the dielectric layer that is vertically aligned with the opening in the patterned sacrificial layer. A metal layer is formed on an area of the metal hardmask layer exposed by the non-mandrel cut in the dielectric layer. The metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

Abstract: This invention relates to a foamable concentrated hair care composition comprising an anionic surfactant and a co-surfactant. The hair care composition may further comprise a silicone, wherein the silicone particle size is less than about 10 microns. The hair care composition has a viscosity of from about 1 to about 3,000 cps.

Abstract: A cryptographic tracking engine is disclosed that can track a user's data over the Internet in a way that allows the user to maintain control over the data downstream while maintaining the security of the stored data. An online entity provides an identifier that is encrypted using a first mechanism. Further, the user provides a data item for an electronic communication between two users. The data item is encrypted using the first mechanism. The data encrypted using the first mechanism is stored in a cryptographic entry. Other data for the electronic communication between the a first and second user is encrypted using a second encryption mechanism, such as a block cipher. The user can then selectively expose data stored in the cryptographic entry on a block-by-block basis to track exchanges of data over the Internet.

Abstract: Techniques for managing electronic user profiles are presented herein. An example method includes accessing, from a data structure, a user profile. The user profile can include a profile identifier and a plurality of data fields. The method also includes displaying, on a display device, an interactive user interface. The user interface can include a plurality of user interface action elements. Each of the user interface action elements can be associated with a data field in the data structure. Each of the user interface action elements can also be individually selectable by a respective user action to transmit the associated data field to a remote device. In response to receiving a selection of a user interface action element, the method can further include transmitting the associated data field and the profile identifier to a router configured to send, based on the profile identifier, the associated data field to the remote device.

Abstract: Devices and methods of fabricating integrated circuit devices for forming assymetric line/space with barrierless metallization are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a substrate, a dielectric matrix, and a hardmask, the dielectric matrix including a set of trenches etched into the dielectric matrix and a set of dielectric fins comprising the dielectric matrix, wherein the set of trenches and the set of dielectric fins are of equal width; damaging an inner surface of each trench of the set of trenches; etching the damaged material of the trenches removing the damaged material of the dielectric matrix; removing the hardmask; and metallizing the trenches by depositing a metal directly on the dielectric matrix with no barrier between the metal and the dielectric matrix after the etching. Also disclosed is an intermediate device formed by the method.

Abstract: A skin engagement member is provided herein for use with a needle assembly or a medical injector to minimize irritation of a patient's skin surrounding an injection site during injection by a needle of the needle assembly or the medical injector. The skin engagement member includes: a body; a surface defined on the body for engaging the patient's skin during injection by the needle; an aperture formed through the body configured to permit passage therethrough of the needle; and, rotatable mounting features for rotatably mounting the body to the needle assembly or the medical injector such that the surface, while engaging the patient's skin, is rotatable about the aperture.

Abstract: A method of treating the hair including providing a pre-aerated concentrated hair care composition. The pre-aerated concentrated hair care composition includes one or more silicones, perfume, and from about 2% to about 10% high melting point fatty compounds. The method also includes applying the pre-aerated concentrated hair care composition the hair; and rinsing the pre-aerated concentrated hair care composition from the hair. The pre-aerated concentrated hair care composition has a density of from about 0.15 g/cm3 to about 0.75 g/cm3 when dispensed from the aerosol foam dispenser.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to skip via structures and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer with one or more wiring structures, located above the first wiring layer; a skip via with metallization, which passes through upper wiring levels including the second wiring layer and which makes contact with the one or more wiring structures of the first wiring layer; and a via structure which comprises a protective material and contacts at least one of the one or more wiring structures at the upper wiring level.

Abstract: Described herein is dosage of foam including from about 5 cm3 to about 70 cm3 of the foam. The foam includes from about 0.5 g to about 4 g of a detersive surfactant; from about 0.001 g to about 4 g propellant; a foam density of from about 0.04 g/cm3 to about 0.23 g/cm3; and a bubble size distribution having an R32 of from about 30 ?m to about 60 ?m.

Abstract: Described herein is a dosage of foam including from about 5 cm3 to about 70 cm3 of the foam. The foam includes from about 0.5 g to about 4 g of a detersive surfactant; from about 0.001 g to about 4 g propellant; a foam density of from about 0.10 g/cm3 to about 0.35 g/cm3; a bubble size distribution having an R32 of from about 5 ?m to about 100 ?m; and a yield point of from about 5 Pa to about 100 Pa.

Abstract: Described herein is dosage of foam including from about 5 cm3 to about 70 cm3 of the foam. The foam includes from about 0.5 g to about 4 g of a detersive surfactant; from about 0.001 g to about 4 g propellant; a foam density of from about 0.02 g/cm3 to about 0.25 g/cm3; and a bubble size distribution having an R32 of from about 5 ?m to about 150 ?m.

Abstract: Described herein is a dosage of foam including from about 5 cm3 to about 70 cm3 of the foam. The foam includes from about 0.5 g to about 4 g of a detersive surfactant, from about 0.001 g to about 4 g propellant, a foam density of from about 0.05 g/cm3 to about 0.35 g/cm3, a bubble size distribution having an R32 of from about 5 ?m to about 100 ?m, and a yield point of from about 4 Pa to about 39 Pa.

Abstract: Described herein is a dosage of foam including from about 5 cm3 to about 70 cm3 of the foam. The foam includes from about 0.5 g to about 4 g of a detersive surfactant, from about 0.001 g to about 4 g propellant, a foam density of from about 0.05 g/cm3 to about 0.35 g/cm3, a bubble size distribution having an R32 of from about 5 ?m to about 100 ?m, and a yield point of from about 4 Pa to about 39 Pa.

Abstract: Described herein is a dosage of foam including from about 7.5 cm3 to about 70 cm3 of the foam. The foam includes (a) from about 0.5 g to about 4 g of a detersive surfactant; (b) from about 0.001 g to about 4 g propellant; (c) a foam density of from about 0.05 g/cm3 to about 0.35 g/cm3; (d) a bubble size distribution having an R32 of from about 5 ?m to about 100 ?m; and (e) a ? value of from about 0.0075 g/cm3 to about 0.1575 g/cm3.

Abstract: Described herein is a dosage of foam including from about 7.5 cm3 to about 70 cm3. The foam includes from about 0.5 g to about 4 g of a detersive surfactant; from about 0.001 g to about 4 g propellant; a foam density of from about 0.05 g/cm3 to about 0.35 g/cm3; a bubble size distribution having an R32 of from about 5 ?m to about 100 ?m; from about 0.001 g to about 2.45 g of a scalp health agent; a ? value of from about 0.0075 g/cm3 to about 0.1575 g/cm3; and a ?? value of from about 0.00005 g/cm3 to about 0.035 g/cm3.

Abstract: This invention relates to a foamable hair care composition comprising an anionic surfactant, a co-surfactant, a viscosity reducing agent, and a cationic polymer having a weight average molecular weight of less than about 1,000,000 g/mol. The hair care composition may further comprise a silicone, wherein the silicone particle size is less than about 10 microns. The hair care composition has a viscosity of from about 1 to about 3,000 cps.

Abstract: This invention relates to a foamable concentrated hair care composition comprising an anionic surfactant, a co-surfactant, a viscosity reducing agent, and a cationic polymer. The hair care composition may further comprise a silicone, wherein the silicone particle size is less than about 10 microns. The hair care composition has a viscosity of from about 1 to about 3,000 cps.

Abstract: Devices and methods of fabricating integrated circuit devices for forming low resistivity interconnects are provided. One method includes, for instance: obtaining an intermediate semiconductor interconnect device having a substrate, a cap layer, and a dielectric matrix including a set of trenches and a set of vias; depositing a barrier layer along a top surface of the semiconductor interconnect device; depositing and annealing a metal interconnect material over a top surface of the barrier layer, wherein the metal interconnect material fills the set of trenches and the set of vias; planarizing a top surface of the intermediate semiconductor interconnect device; exposing a portion of the barrier layer between the set of trenches and the set of vias; and depositing a dielectric cap. Also disclosed is an intermediate device formed by the method.

Abstract: Devices and methods of fabricating integrated circuit devices for forming assymetric line/space with barrierless metallization are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a substrate, a dielectric matrix, and a hardmask, the dielectric matrix including a set of trenches etched into the dielectric matrix and a set of dielectric fins comprising the dielectric matrix, wherein the set of trenches and the set of dielectric fins are of equal width; damaging an inner surface of each trench of the set of trenches; etching the damaged material of the trenches removing the damaged material of the dielectric matrix; removing the hardmask; and metallizing the trenches by depositing a metal directly on the dielectric matrix with no barrier between the metal and the dielectric matrix after the etching. Also disclosed is an intermediate device formed by the method.