Abstract: Provided is a personal care article including one or more extruded dissolvable fibers. The extruded dissolvable fibers include (a) from about 10% to about 60% of one or more anionic surfactants; (b) from about 10% to about 50% of one or more water soluble polymers; (c) from about 1% to about 30% of one or more plasticizers; and (d) from about 0.01% to about 30% water. The one or more anionic surfactants have a Krafft point of less than about 30° C. The one or more extruded dissolvable fibers has an average diameter of from about 20 microns to about 1,000 microns. The personal care article has a dry density of from about 0.02 g/cm3 to about 0.30 g/cm3.

Abstract: Provided is a process for forming a personal care article comprising producing a personal care article from a twin screw extruder employing blowing agents, the personal care article including (i) from about 10% to about 60% of one or more anionic surfactants, wherein the one or more anionic surfactants have a Krafft point of less than about 30° C.; (ii) from about 10% to about 50% of one or more water soluble polymers; (iii) from about 1% to about 30% of one or more plasticizers; and (iv) from about 0.01% to about 40% water. The personal care article has a density of from about 0.05 g/cm3 to about 0.95 g/cm3.

Abstract: A process for forming a personal care article, the process including (a) adding one or more water soluble polymers and one or more plasticizers to a kneader to form a premix; (b) adding one or more anionic surfactants to the premix to form a mixture; (c) kneading the mixture until homogeneous; and (d) forming the personal care article. The personal care article includes (i) from about 10% to about 60% of one or more anionic surfactants; (ii) from about 10% to about 50% of one or more water soluble polymers; (iii) from about 1% to about 30% of one or more plasticizers; and (iv) from about 10% to about 50% water. The one or more anionic surfactants have a Krafft point of less than about 30° C.

Abstract: Provided is a process for forming a dissolvable fiber, the process including (a) producing an extrudate from a twin screw extruder; and (b) forming the extrudate into the dissolvable fiber. The dissolvable fiber includes (i) from about 10% to about 60% of one or more anionic surfactants; (ii) from about 10% to about 50% of one or more water soluble polymers; (iii) from about 1% to about 30% of one or more plasticizers; and (iv) from about 0.01% to about 30% water. The one or more anionic surfactants have a Krafft point of less than about 30° C. The dissolvable fiber has an average diameter of from about 20 microns to about 1,000 microns.

Abstract: A process for forming a personal care article, the process including (a) producing an extrudate from a twin screw extruder, and (b) forming the extrudate into the personal care article. The personal care article includes (i) from about 10% to about 60% of one or more anionic surfactants, wherein the one or more anionic surfactants have a Krafft point of less than 30° C.; (ii) from about 10% to about 50% of one or more water soluble polymers; (iii) from about 1% to about 30% of one or more plasticizers; and (iv) from about 10% to about 50% water.

Abstract: A method for fabricating integrated circuits includes providing a substrate including a protecting layer over an oxide layer and etching a recess through the protecting layer and into the oxide layer. A barrier material is deposited over the substrate to form a barrier layer including a first region in the recess and a second region outside the recess. A conductive material is deposited over the barrier layer and forms an embedded electrical interconnect in the recess and an overburden region outside the recess. The overburden region of the conductive material is removed and a portion of the embedded electrical interconnect is recessed. Thereafter, the barrier layer is etched to remove the second region of the barrier layer and to recess a portion of the first region of the barrier layer. After etching the barrier layer, the protecting layer is removed from the oxide layer.

Abstract: One illustrative method disclosed herein includes providing a layer of a carbon-containing insulating material having a nominal carbon concentration, performing at least one process operation on the carbon-containing insulating material that results in the formation of a reduced-carbon-concentration region in the layer of carbon-containing insulating material, wherein the reduced-carbon-concentration region has a carbon concentration that is less than the nominal carbon concentration, performing a carbon-introduction process operation to introduce carbon atoms into at least the reduced-carbon-concentration region and thereby define a carbon-enhanced region having a carbon concentration that is greater than the carbon concentration of the reduced-carbon-concentration region and, after introducing the carbon atoms, performing a heating process on at least the carbon-enhanced region.

Abstract: A process of modulating the thickness of a barrier layer deposited on the sidewalls and floor of a recessed feature in a semiconductor substrate is disclosed. The process includes altering the surface of the conductive feature on which the barrier layer is deposited by annealing in a reducing atmosphere and optionally additionally, silylating the dielectric surface that forms the sidewalls of the recessed feature.

Abstract: Methods are provided for fabricating integrated circuits. In accordance with one embodiment, the method includes forming a portion of a semiconductor substrate at least partially bounded by a confinement isolation material. A liner dielectric is formed overlying the confinement isolation material and is treated to passivate a surface thereof. An epitaxial layer of semiconductor material is then grown overlying the portion of semiconductor substrate.

Abstract: One illustrative method disclosed herein includes performing a first etching process to define a via opening in a layer of insulating material, performing at least one process operation to form a sacrificial liner layer on the sidewalls of the via opening, performing a second etching process to define a trench in the layer of insulating material, wherein the sacrificial liner layer is exposed to the second etching process, after performing the second etching process, performing a third etching process to remove the sacrificial liner layer and, after performing the third etching process, forming a conductive structure in at least the via opening and the trench.

Abstract: One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material.

Abstract: A method for fabricating integrated circuits includes providing a substrate including a protecting layer over an oxide layer and etching a recess through the protecting layer and into the oxide layer. A barrier material is deposited over the substrate to form a barrier layer including a first region in the recess and a second region outside the recess. A conductive material is deposited over the barrier layer and forms an embedded electrical interconnect in the recess and an overburden region outside the recess. The overburden region of the conductive material is removed and a portion of the embedded electrical interconnect is recessed. Thereafter, the barrier layer is etched to remove the second region of the barrier layer and to recess a portion of the first region of the barrier layer. After etching the barrier layer, the protecting layer is removed from the oxide layer.

Abstract: Methods are provided for fabricating integrated circuits. In accordance with one embodiment, the method includes forming a portion of a semiconductor substrate at least partially bounded by a confinement isolation material. A liner dielectric is formed overlying the confinement isolation material and is treated to passivate a surface thereof An epitaxial layer of semiconductor material is then grown overlying the portion of semiconductor substrate.

Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.

Abstract: A method includes forming a trench/via in a layer of insulating material, forming a first layer comprised of silicon or germanium on the insulating material in the trench/via, forming a copper-based seed layer on the first layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure.

Abstract: An article that is a porous, dissolvable solid structure that dissolves easily due to the shape, product orientation and/or method of manufacturing the porous, dissolvable solid structure. The process of making the Article involves preparing a pre-mixture, aerating the pre-mixture, dosing the pre-mixture into individual cavities in molds, and drying the pre-mixture to an Article having an open celled foam with a % open cell of from about 80% to about 100%.

Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.

Abstract: An engine system is disclosed. The engine system may have an engine, an intake duct, and a valve disposed within the intake duct and movable between a flow-passing first position, and a flow-blocking second position. The engine system may also have an actuator configured to move the valve from the second position toward the first position, and a biasing element configured to move the valve from the first position toward the second position. The engine system may additionally have a sensor configured to sense an operating condition of the engine, and a controller. The controller may be configured to receive an input indicative engine activation, and to activate the actuator based on the input. The controller may also be configured to make a determination that the operating condition of the engine has deviated from a desired operating condition, and to deactivate the actuator based on the determination.

Abstract: In one disclosed embodiment, the present method for depositing a conductive capping layer on metal lines comprises forming metal lines on a dielectric layer, applying a voltage to the metal lines, and depositing the conductive capping layer on the metal lines. The applied voltage increases the selectivity of the deposition process used, thereby preventing the conductive capping layer from causing a short between the metal lines. The conductive capping layer may be deposited through electroplating, electrolessly, by atomic layer deposition (ALD), or by chemical vapor deposition (CVD), for example. In one embodiment, the present method is utilized to fabricate a semiconductor wafer. In one embodiment, the metal lines comprise copper lines, while the conductive capping layer may comprise tantalum or cobalt. The present method enables deposition of a capping layer having high electromigration resistance.

Abstract: Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.