Abstract: A multilayer ceramic capacitor includes: a first and a second external electrodes; internal electrode layers that are alternately connected to the first and the second external electrodes; and dielectric layers including a ceramic material as a main component, wherein a D20% diameter of the ceramic material of an end margin region, in which internal electrode layers connected to one of the first external electrode and the second external electrode face with each other and does not face with internal electrode layers connected to the other, is smaller than that of a capacity region in which internal electrode layers connected to different external electrodes face with each other and a D80% diameter of the ceramic material of the end margin region is larger than that of the capacity region, or 1/(log D80?log D20) of the ceramic material of the capacity region is larger than that of the end margin region.

Abstract: Provided is a highly versatile heat-curable resin composition for semiconductor encapsulation that exhibits a favorable water resistance and abradability when used to encapsulate a semiconductor device; and a superior fluidity and a small degree of warpage even when used to perform encapsulation on a large-sized wafer. The heat-curable resin composition for semiconductor encapsulation comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule, and containing a particular cyanate ester compound that has a viscosity of not higher than 50 Pa·s; (B) a phenol curing agent containing a resorcinol-type phenolic resin; (C) a curing accelerator; (D) an inorganic filler surface-treated with a silane coupling agent; and (E) an ester compound.

Abstract: An ultrasonic device includes: a substrate provided with a first opening and a second opening; a support film that is provided on the substrate and closes the first opening and the second opening; a transmitting piezoelectric film that is provided on the support film at a position which overlaps the first opening when viewed in a thickness direction of the substrate and that is sandwiched between a pair of electrodes in the thickness direction of the substrate; and a receiving piezoelectric film that is provided on the support film at a position which overlaps the second opening when viewed in the thickness direction of the substrate and that is sandwiched between a pair of electrodes in an intersecting direction intersecting with the thickness direction of the substrate.

Abstract: A multilayer ceramic capacitor includes: a multilayer chip having a parallelepiped shape in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to two edge faces of the multilayer chip; and a pair of external electrodes that are formed from the two edge faces to at least one of side faces of the multilayer chip; wherein in the external electrodes, a first metal layer whose ceramic amount is 5 wt % or more contacts with the two edge faces, and a second metal layer whose ceramic amount is less than 5 wt % contacts with the at least one of the side faces.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2 ??(1) ?2<?1+?2?2?3<2 ??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: The present invention provides an electromagnetic wave shielding support base-attached encapsulant for collectively encapsulating a semiconductor device mounting surface of a substrate having semiconductor devices mounted thereon or a semiconductor device forming surface of a wafer having semiconductor devices formed thereon, the support base-attached encapsulant including a support base having an electromagnetic wave shielding property of 20 dB or more within a range of 100 MHz to 1,000 MHz, and an encapsulant composed of a thermosetting resin layer laminated on the support base.

Abstract: A stress-detecting element includes a support body, a support film, a first piezoelectric element, first and second elastic parts. The support body has an opening part with first and second rectilinear sections extending parallel to each other. The support film blocks off the opening part. The first piezoelectric element straddles the first rectilinear section from an interior area to an exterior area of the opening part as seen in plan view. The first elastic part straddles the first rectilinear section from the interior area to the exterior area of the opening part. The second elastic part straddles the second rectilinear section from the interior area to the exterior area of the opening part. The first and second elastic parts respectively have first and second elastic end sections disposed in the interior area of the opening part and spaced apart from each other.

Abstract: In an embodiment of a ceramic electronic component, an external electrode 12 of a capacitor 10 has one first planar part SEa of roughly rectangular profile positioned on a surface that specifies the length dimension of the ceramic chip 11, as well as four second planar parts SEb of roughly rectangular profile positioned on both surfaces that specify the height dimension, and both surfaces that specify the width dimension, of the ceramic chip 11 and also continuing to the first planar part SEa. The second planar part SEb is constituted by a baked metal film 12a formed on the exterior surface of the ceramic chip 11 and a plated metal film 12b formed on the exterior surface of the baked metal film 12a via an adhesive force mitigation film 12c.

Abstract: A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient ?1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient ?2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient ?3 of the base satisfy both of the following formula (1) and (2); ?1<?3<?2 ??(1) ?2<?1+?2?2?3<2 ??(2) wherein the unit of the linear expansion coefficient is ppm/K.

Abstract: An electronic component includes: a chip having first and second end surfaces oriented in a direction of a first axis, first and second main surfaces oriented in a direction of a second axis orthogonal to the first axis, first and second side surfaces oriented in a direction of a third axis orthogonal to the first and second axes, and first and second external electrodes respectively covering the first and second end surfaces and each extending to the first and second main surfaces and side surfaces; a covering portion covering the chip from the first main surface toward the second main surface; and exposed portions provided to the second main surface, including regions where the first and second external electrodes are exposed without being covered with the covering portion, and being pushed out toward the first main surface along ridges connecting the first and second end surfaces and side surfaces.

Abstract: Manufacturing a semiconductor apparatus includes preparing a support-base attached encapsulant including a thermosetting resin layer stacked as an encapsulant on a support base, coating a semiconductor-device mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor-device forming surface of a wafer on which semiconductor devices are formed with the thermosetting resin layer of the support-base attached encapsulant, heating and curing the thermosetting resin layer to collectively encapsulate the semiconductor-device mounting surface of the substrate or the semiconductor-device forming surface of the wafer, and cutting the encapsulated substrate or wafer by dicing.

Abstract: An ultrasonic device includes an ultrasonic transceiver having a flat ultrasonic wave transmitting/receiving surface and an acoustic lens provided on the ultrasonic wave transmitting/receiving surface. The acoustic lens has a first acoustic lens layer on the side facing away from the ultrasonic wave transmitting/receiving surface and a second acoustic lens layer on the side facing the ultrasonic wave transmitting/receiving surface. The first acoustic lens layer and the second acoustic lens layer have different attenuation coefficients. The interface between the first acoustic lens layer and the second acoustic lens layer is parallel to the ultrasonic wave transmitting/receiving surface.

Abstract: An ultrasonic device includes an ultrasonic transducer that has a vibration film and transmits an ultrasonic wave from a first surface side of the vibration film, an acoustic matching layer that is provided on the first surface side of the vibration film, and an acoustic lens that is provided on the acoustic matching layer on an opposite side to the vibration film, in which the acoustic matching layer is formed of even-numbered layers including a first layer and a second layer having acoustic impedance lower than acoustic impedance of each of the first layer and the acoustic lens, and the first layer and the second layer are disposed in this order toward the acoustic lens from the vibration film, and in which each of the first layer and the second layer has a thickness corresponding to an odd-numbered multiple of ?/4 with a wavelength of the ultrasonic wave as ?.

Abstract: An ultrasonic probe unit is provided with an ultrasonic probe, and a fixation section adapted to fix the ultrasonic probe to a living body, the ultrasonic probe includes an ultrasonic device adapted to perform transmission and reception of an ultrasonic wave, a probe-side magnet, and a displacement mechanism adapted to adjust a relative positional relationship between the ultrasonic device and the probe-side magnet, and the fixation section includes a fixation surface to be fixed to the living body, and a fixation section-side magnet a relative position of which to the probe-side magnet is fixed to thereby fix the ultrasonic probe to the living body.

Abstract: An electronic component includes: a chip having first and second end surfaces oriented in a direction of a first axis, first and second main surfaces oriented in a direction of a second axis orthogonal to the first axis, first and second side surfaces oriented in a direction of a third axis orthogonal to the first and second axes, and first and second external electrodes respectively covering the first and second end surfaces and each extending to the first and second main surfaces and side surfaces; a covering portion covering the chip from the first main surface toward the second main surface; and exposed portions provided to the second main surface, including regions where the first and second external electrodes are exposed without being covered with the covering portion, and being pushed out toward the first main surface along ridges connecting the first and second end surfaces and side surfaces.

Abstract: An ultrasonic transducer element chip includes a substrate, a plurality of ultrasonic transducer elements and a plate-shaped member. The substrate includes a partition wall section defining a plurality of openings arranged in an array pattern. A wall thickness of the partition wall section is smaller than a wall height of partition wall section. Each of the ultrasonic transducer elements is provided in each of the openings. The plate-shaped member is fixed on a surface of the substrate opposite to a surface of the substrate on which the ultrasonic transducer elements are provided. The plate-shaped member covers at least one of the openings in a plan view seen along a thickness direction of the substrate.

Abstract: A receiving transducer includes: a flexible portion; a piezoelectric film provided on the flexible portion; a first electrode provided between a first surface of the flexible portion, on which the piezoelectric body is provided, and a second surface of the piezoelectric film that is a surface not facing the flexible portion; and a second electrode that is provided between the first and second surfaces and that faces the first electrode with a gap interposed therebetween in plan view as viewed from the thickness direction of the flexible portion.

Abstract: A method for manufacturing a semiconductor apparatus, including an encapsulating step of collectively encapsulating a device mounting surface of a substrate having semiconductor devices mounted thereon with a base-attached encapsulant having a base and a thermosetting resin layer formed on one surface of the base, the semiconductor devices being mounted by flip chip bonding, the encapsulating step including a unifying stage of unifying the substrate having the semiconductor devices mounted thereon and the base-attached encapsulant under a reduced pressure condition with a vacuum of 10 kPa or less, and a pressing stage of pressing the unified substrate with a pressure of 0.2 MPa or more.

Abstract: An ultrasonic transducer element chip includes a substrate defining an opening, an ultrasonic transducer element disposed at a position corresponding to the opening in a thickness direction of the substrate, and a reinforcing member connected to the substrate to cover the opening. The reinforcing member defines a ventilation passage from the opening to an outside of the substrate.

Abstract: A piezoelectric element which includes a vibrating film, a piezoelectric body disposed on one surface of the vibrating film, and a horizontal electrode structure in which electrodes are disposed at a predetermined gap therebetween on the piezoelectric body. The vibrating film includes a recess portion in a portion corresponding to the predetermined gap in plan view.