Abstract: A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.

Abstract: A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects.

Abstract: To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing ?-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography.

Abstract: An information processing apparatus includes a first processing unit, a second processing unit, and a common storage unit that is commonly accessed by the first processing unit and the second processing unit. The first processing unit writes a request in the common storage unit for requesting the second processing unit to perform a certain process, and notifies the second processing unit of the request. The second processing unit writes a notification in the common storage unit indicating the process is completed in response to the request.

Abstract: Provided are an organic EL device having improved conductivity of an anode compared with conventional organic EL devices, and a method for manufacturing such organic EL device. The organic EL device is provided with a layer-like optical element (40), which at least contains a liquid crystal material and a dye, has a refractive index distribution based on orientation of liquid crystal molecules constituting the liquid crystal material, and has the refractive index distribution fixed; a substrate (11) which can transmit visible light; a light emitting layer (60) composed of an organic EL material; a cathode (70); and an anode (50). Each of the cathode (70) and the anode (60) is formed layer-like. The organic EL device is further provided with an alignment film (12), and the alignment film (12) and the optical element (40) are in contact with each other.

Abstract: A semiconductor integrated circuit has a voltage supply terminal; a first input terminal fed with a first input signal; an output terminal that outputs an output signal; a second input terminal fed with a second input signal; a first MOS transistor having one end connected to the voltage supply terminal and a gate electrode connected to the first input terminal; a second MOS transistor having one end connected to a first potential, an other end connected to the output terminal, and a gate electrode connected to the second input terminal; and a program element acting as a MOS transistor having one end connected to the other end of the second MOS transistor and an other end connected to a second potential higher than the first potential.

Abstract: An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R2 is H or monovalent hydrocarbon, R3 and R4 are H or monovalent hydrocarbon, or R3 and R4, taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.

Abstract: A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.

Abstract: An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R1 is hydrogen or methyl, R2 is alkylene or fluoroalkylene, and R3 is fluoroalkyl. The additive polymer is highly transparent to radiation with wavelength of up to 200 nm. Water repellency, water slip, acid lability, hydrolysis and other properties of the polymer may be adjusted by a choice of polymer structure.

Abstract: Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance.

Abstract: Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition. Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79.

Abstract: A semiconductor integrated circuit device includes a first block, a second block, and a control section. The first block includes a first fuse, a first switching configured to write data to the first fuse, a first holding portion capable of holding a first instruction, and a first instruction portion configured to turn on the first switching when a second instruction is given thereto with the first instruction. The second block includes a second fuse, a second switching configured to write data to the second fuse, a second holding portion capable of holding the first instruction, and a second instruction portion configured to turn on the second switching when the second instruction is given thereto with the first instruction. The control section issues the second instruction at a point in time when the first instruction is held in the first and second holding portions.

Abstract: An AC generator is connected to an engine and generates AC power, which is then converted into DC power by an AC/DC converter. A DC/AC converter converts the DC power output from the AC/DC converter into AC power for driving an AC motor. When a cruising-speed determining unit determines that the speed of a movable body has reached a cruising speed, a control unit connects the AC generator to the AC motor through a bypass unit, changes over at least one of the number of poles of the AC generator and the number of poles of the AC motor, and sets frequencies of the AC generator and the AC motor to values corresponding to the cruising speed.

Abstract: A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure.

Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

Abstract: A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.

Abstract: A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C1-C20 alkyl group which may be substituted with halogen or separated by oxygen or carbonyl, and Z is a divalent organic group which forms a ring with alkylenoxy and contains a polymerizable unsaturated group. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water sliding property, lipophilicity, acid lability and hydrolyzability and is useful in formulating a protective coating composition and a resist composition.

Abstract: A semiconductor memory device includes a memory cell array provided with a main memory cell array including a plurality of memory cells, and a dummy column including a plurality of dummy memory cells, a dummy readout current control section configured to control a current value of a dummy readout current of the dummy memory cell in such a manner that the current value becomes between the current values of the readout currents in first and second states of the memory cell, and a sense section provided with a sense amplifier configured to receive a readout current in one of the first and second states, or dummy readout current as an input, comparing these currents with each other, and outputting the currents.

Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

Abstract: An electronic device is connected to a loop transmission line via a bypass circuit and detects being bypassed from the loop transmission line. Each electronic device connected to a looped transmission line via each bypass circuit receives a positioning map in which an own address is registered, and judges whether the own address is still registered. The electronic device can judge whether this electronic device is being bypassed from the loop transmission line by the bypass circuit using a conventional sequence.