Abstract: A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

Abstract: A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

Abstract: An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

Abstract: A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

Abstract: A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

Abstract: A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

Abstract: There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

Abstract: There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

Abstract: A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

Abstract: There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

Abstract: A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 300 or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.

Abstract: A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.

Abstract: A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

Abstract: A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

Abstract: A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

Abstract: There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

Abstract: A write wiring for writing information in an MTJ device is covered with a magnetic layer. The magnetic layer has a structure in which the growing direction of columnar grains is 30° or less from the normal-line direction of sidewalls, a structure in which grains are deposited like a layer, or a structure in which grains are amorphously deposited.