Abstract: A nonvolatile memory cell using vertical nanowire (VNW) FETs includes a program element of which a gate is connected to a word line, and a switch element that is provided between the program element and a bit line and of which a gate is connected to the word line. The program element and the switch element are each constituted by one or a plurality of VNW FETs, and these VNW FETs are arranged in a line in a first direction.

Abstract: A friction drive belt (B) includes a belt body (10) that is wrapped around pulleys in contact therewith to transmit power. At least a pulley contact portion (15) of the belt main body (10) is made of a rubber composition containing 30-80 parts by mass of at least one layered silicate selected from a smectite group and a vermiculite group, per 100 parts by mass of raw rubber containing an ethylene-?-olefin elastomer.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: A multi-layer substrate with metal layers as a moisture diffusion barrier for reduced electrical performance degradation over time after moisture exposure and methods of design and manufacture. The method includes determining a diffusion rate of an insulator material provided between an upper metal layer and an underlying signal line. The method further includes calculating a diffusion distance between a plane opening of the upper metal layer and the underlying signal line using the diffusion rate of the insulator material.

Abstract: A multi-layer substrate with metal layers as a moisture diffusion barrier for reduced electrical performance degradation over time after moisture exposure and methods of design and manufacture. The method includes determining a diffusion rate of an insulator material provided between an upper metal layer and an underlying signal line. The method further includes calculating a diffusion distance between a plane opening of the upper metal layer and the underlying signal line using the diffusion rate of the insulator material.

Abstract: There is installed a configuration that includes a process container; a heater chamber exhaust duct configured to discharge an air that has cooled a space at which a heater is installed; a gas box exhaust duct configured to suck and discharge an atmosphere in a gas box; a scavenger exhaust duct configured to suck and discharge an atmosphere in a scavenger; a local exhaust duct configured to suck and discharge an atmosphere in a local exhaust port installed in a transfer chamber; an exhaust damper valve including an opening degree variable mechanism installed in at least one selected from the group of the heater chamber exhaust duct, the gas box exhaust duct, the scavenger exhaust duct, and the local exhaust duct; and a controller configured to remotely control an opening degree of the exhaust damper valve.

Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a processing gas supply part configured to supply a processing gas to the substrate; a heater configured to heat the substrate; a transfer robot configured to transfer the substrate; a first power supply connected to at least one part selected from the group of the processing gas supply part, the heater, and the transfer robot; a first controller installed between the at least one part and the first power supply; a second power supply including two or more power sources configured to drive the first controller; and a second controller installed between the first controller and the second power supply and configured to allow power to be supplied to the first controller while setting a power ratio of each of the two or more power sources of the second power supply to a predetermined value.

Abstract: A multi-layer substrate with metal layers as a moisture diffusion barrier for reduced electrical performance degradation over time after moisture exposure and methods of design and manufacture. The method includes determining a diffusion rate of an insulator material provided between an upper metal layer and an underlying signal line. The method further includes calculating a diffusion distance between a plane opening of the upper metal layer and the underlying signal line using the diffusion rate of the insulator material.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract: A database server stores encrypted vector data in which each of a plurality of elements is encrypted by encryption maintaining semi-homomorphism between calculation before encryption and calculation after encryption. The database server receives an obfuscated query (N-randomized query) from a terminal device, performs calculation for each of a plurality of segments of vectors of the obfuscated query with a segment of the encrypted vector data, and transmits the calculation to the terminal device in reply. The terminal device may acquire a result of decryption calculation transmitted in reply by a decryption device.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract: Provided is a method for producing a non-aqueous electrolyte secondary battery. A negative electrode core of a negative electrode plate has front and back surfaces each with a surface roughness different from the other Rz. In a wound electrode body, a wound negative electrode core-exposed portion is formed at one end portion in the winding axis direction. In the wound negative electrode core-exposed portion, the surface roughness of the negative electrode core-exposed portion on the outer surface side is lower than the surface roughness on the inner surface side. A negative electrode current collector is placed on the outer surface of the wound negative electrode core-exposed portion and the negative electrode current collector is resistance-welded to the wound negative electrode core-exposed portion.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract: A database server stores encrypted vector data in which each of a plurality of elements is encrypted by encryption maintaining semi-homomorphism between calculation before encryption and calculation after encryption. The database server receives an obfuscated query (N-randomized query) from a terminal device, performs calculation for each of a plurality of segments of vectors of the obfuscated query with a segment of the encrypted vector data, and transmits the calculation to the terminal device in reply. The terminal device may acquire a result of decryption calculation transmitted in reply by a decryption device.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

Abstract: A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.