Abstract: A system and method of operating a twin-transistor, multi-time programmable memory (MTPM) memory cell that ensures accurate reproducibility of bit values read after each of write cycle. Each multi-time programmable memory cell includes a series connection of a first transistor and a second transistor. The method includes writing, using a write circuit at select memory cell locations, initial bit values to one or more select memory cells. Then, using the write circuit, a rebalancing of a state of a parameter associated with one or more the first transistor or second transistor, at each the select memory cell, is performed. Then, an erasing cycle is performed, at each the rebalanced select memory cell, the written initial bit value. In one embodiment, the erasing cycle may first be performed prior to rebalancing. The rebalancing and erasing are to be performed prior to each bit value write cycle.

Abstract: A system and method of operating a twin-transistor single bit multi-time programmable memory cell to provide a high gain, sensing scheme for small signals. The memory cell includes a pair of a first transistor and a second transistor providing a differential signal output. The first transistor of the memory cell couples a first circuit leg having a first current source load transistor and the second transistor couples a second circuit leg having a second current source load transistor. A programmed value is represented by a voltage threshold shift in one of the first or second transistors. A feedback circuit receives one of: a first signal or a second signal of the differential signals, and generates, in response, a feedback signal which is simultaneously applied to bias each current source load transistor in each the first and second circuit legs to amplify a voltage differential between the differential signal outputs.

Abstract: A local sorting module includes a set of storage elements storing binary vectors configured in a one-dimensional (1D) or two-dimensional (2D) array structure and separated by respective comparators configured to conditionally compare and sort the binary vectors. The comparators may perform a sort using a compare-and-flip or a compare-and-swap operation. Local sorting modules may be coupled with a global sorting module for enabling a tournament sort algorithm to output values stored in storage elements one at a time until all data is outputted in a predetermined sorting order.

Abstract: A local sorting module includes a set of storage elements storing binary vectors configured in a one-dimensional (1D) or two-dimensional (2D) array structure and separated by respective comparators configured to conditionally compare and sort the binary vectors. The comparators may perform a sort using a compare-and-flip or a compare-and-swap operation. Local sorting modules may be coupled with a global sorting module for enabling a tournament sort algorithm to output values stored in storage elements one at a time until all data is outputted in a predetermined sorting order.

Abstract: The present disclosure generally relates to a wiring structure for a fuse component and corresponding methods of fabrication. A wiring structure for a fuse component according to the present disclosure can include: a first electrical terminal embedded within a doped conductive layer, the doped conductive layer being positioned between two insulator layers of an integrated circuit (IC) structure; a dielectric liner positioned between the first electrical terminal and the doped conductive layer; a second electrical terminal embedded within the doped conductive layer; wherein each of the first electrical terminal and the second electrical terminal are further embedded in one of the two insulator layers, and the dielectric liner is configured to degrade upon becoming electrically charged.

Abstract: A bitline circuit for embedded Multi-Time-Read-Only-Memory including a plurality of NMOS memory cells coupled to a plurality of wordlines in each row, bitlines in each column, and a source-line. More specifically, the bitline circuit controls a charge trap behavior of the target NMOS memory array by mode-dependent bitline pull-down circuit, thereby discharging the bitline strongly to GND to trap the charge effectively in a Programming mode, and discharge the bitline weakly to GND to develop a bitline voltage to detect the charge trap state. The mode dependent circuit is realized by using at least two NMOS to switch the device strength, using a pulsed gate control in a Read mode, or using analog voltage to limit the bitline current. The proposed method further includes a protection device, allowing all bitline control circuit using thin oxide devices.

Abstract: A method of generating a default state in an embedded Multi-Time-Programmable-Read-Only-Memory for a high-performance logic technology consisting of a plurality of memory cells featuring a charge trap, each having a first and a second NMOS transistor. The first and second NMOS transistors use a different mask having different threshold voltages. The second NMOS threshold voltage is adjusted to a middle point of the threshold voltage of the first NMOS with or without trapping the charge. When the charge is not trapped by the first NMOS, the NMOS threshold is lowered to the second NMOS, thereby generating a default state. When the charge is trapped to the first NMOS, the NMOS threshold is higher than the second NMOS, generating a second state. Moreover, a reference voltage generation can use two arrays, each consisting of memory cells and reference memory cells such that a default state can be generated for a single transistor per memory cell.

Abstract: A local sorting module includes a set of storage elements storing binary vectors configured in a one-dimensional (1D) or two-dimensional (2D) array structure and separated by respective comparators configured to conditionally compare and sort the binary vectors. The comparators may perform a sort using a compare-and-flip or a compare-and-swap operation. Local sorting modules may be coupled with a global sorting module for enabling a tournament sort algorithm to output values stored in storage elements one at a time until all data is outputted in a predetermined sorting order.

Abstract: A local sorting module includes a set of storage elements storing binary vectors configured in a one-dimensional (1D) or two-dimensional (2D) array structure and separated by respective comparators configured to conditionally compare and sort the binary vectors. The comparators may perform a sort using a compare-and-flip or a compare-and-swap operation. Local sorting modules may be coupled with a global sorting module for enabling a tournament sort algorithm to output values stored in storage elements one at a time until all data is outputted in a predetermined sorting order.

Abstract: A first copy of an intrinsic ID of a first node may be stored on a second node. The first node may receive a challenge that causes it to generate a second copy of its intrinsic ID. The second copy and a random value may be used as inputs of a function to generate a first code. The first code is transmitted to the second node. The second node decodes the first code using its local copies of the random value and/or the intrinsic ID. The second node checks the decoded information against its local information and authenticates the first node if there is a match.

Abstract: Embodiments of the present invention relate generally to electronic components such as semiconductor wafers and more particularly, to a double-sided three-dimensional (3D) hierarchal architecture scheme for multiple semiconductor wafers using an arrangement of through silicon vias (TSVs) and backside wiring. In an embodiment a first word line architecture may be formed on a front side of an IC chip and connected to a second word line architecture formed on a back side of the IC chip through intra-wafer, TSVs, thereby relocating required wiring to the back side of the IC chip.

Abstract: A mechanism that provides a source of reliability concern is leveraged to establish a non-volatile memory element. A memory cell may be programmed to have a longer retention time or a shorter retention time. Such mechanisms include, but are not limited to, threshold voltage modulation by charge trapping in the gate dielectric of an access transistor of a dynamic random access memory (DRAM) cell. A memory cell is programmed with a voltage pulse into a long retention time mode or into a short retention time mode. The programmed mode of each memory cell may be read by storing electrical charges in the DRAM cells, and by measuring whether the electrical charges remain after a threshold retention time. Further, a dual mode memory cell may be operated as a conventional DRAM cell, or as a non-volatile memory storing retention time as data.

Abstract: Described are a hardware encryption engine, and secret key registration and authentication system recoverable binary bit using knowing an initial secret key stored in the master system. The secret key is overwritten in each authentication, updating it to the master and encryption engine independently. The secret key over write command can be preferably given to the chip as a CHG, and the non recoverable binary bit from the sense amplifier is used for response.

Abstract: A local sorting module includes a set of storage elements storing binary vectors configured in a one-dimensional (1D) or two-dimensional (2D) array structure and separated by respective comparators configured to conditionally compare and sort the binary vectors. The comparators may perform a sort using a compare-and-flip or a compare-and-swap operation. Local sorting modules may be coupled with a global sorting module for enabling a tournament sort algorithm to output values stored in storage elements one at a time until all data is outputted in a predetermined sorting order.

Abstract: Embodiments of the present invention provide a chip authentication system using multi-domain intrinsic identifiers. Multiple intrinsic identifiers taken from multiple domains (areas or sections of the chip) are compared against the intrinsic identifiers collected during the manufacture of the chip. If at least one intrinsic identifier matches those collected during manufacture, the chip may be designated as authentic.

Abstract: A method generating a default state in an embedded Multi-Time-Programmable-Read-Only-Memory for a high-performance logic technology consisting of a plurality of memory cells featuring a charge trap, each having a first and a second NMOS transistor. The first and second NMOS transistors use a different mask having different threshold voltages. The second NMOS threshold voltage is adjusted to a middle point of the threshold voltage of the first NMOS with or without trapping the charge. When the charge is not trapped by the first NMOS, the NMOS threshold is lowered to the second NMOS, thereby generating a default state. When the charge is trapped to the first NMOS, the NMOS threshold is higher than the second NMOS, generating a second state. Moreover, a reference voltage generation can use two arrays, each consisting of memory cells and reference memory cells such that a default state can be generated for a single transistor per memory cell.

Abstract: A mechanism that provides a source of reliability concern is leveraged to establish a non-volatile memory element. A memory cell may be programmed to have a longer retention time or a shorter retention time. Such mechanisms include, but are not limited to, threshold voltage modulation by charge trapping in the gate dielectric of an access transistor of a dynamic random access memory (DRAM) cell. A memory cell is programmed with a voltage pulse into a long retention time mode or into a short retention time mode. The programmed mode of each memory cell may be read by storing electrical charges in the DRAM cells, and by measuring whether the electrical charges remain after a threshold retention time. Further, a dual mode memory cell may be operated as a conventional DRAM cell, or as a non-volatile memory storing retention time as data.

Abstract: A method for identifying an unclonable chip uses hardware intrinsic keys and authentication responses employing intrinsic parameters of memory cells invariant and unique to the unclonable chip, wherein intrinsic parameters that characterize the chip can extend over its lifetime. The memory cells having a charge-trap behavior are arranged in an NOR type memory array, allowing to create a physically unclonable fuse (PUF) generation using non-programmed memory cells, while stringing non-volatile bits in programmed memory cells. The non-volatile memory cell bits are used for error-correction-code (ECC) for the generated PUF. The invention can further include a public identification using non-volatile bits, allowing hand shaking authentication using computer with dynamic challenge.

Abstract: The present disclosure generally relates to a wiring structure for a fuse component and corresponding methods of fabrication. A wiring structure for a fuse component according to the present disclosure can include: a first electrical terminal embedded within a doped conductive layer, the doped conductive layer being positioned between two insulator layers of an integrated circuit (IC) structure; a dielectric liner positioned between the first electrical terminal and the doped conductive layer; a second electrical terminal embedded within the doped conductive layer; wherein each of the first electrical terminal and the second electrical terminal are further embedded in one of the two insulator layers, and the dielectric liner is configured to degrade upon becoming electrically charged.

Abstract: Embodiments of the present invention provide an authenticating service of a chip having an intrinsic identifier (ID). In a typical embodiment, an authenticating device is provided that includes an identification (ID) engine, a self-test engine, and an intrinsic component. The intrinsic component is associated with a chip and includes an intrinsic feature. The self-test engine retrieves the intrinsic feature and communicates it to the identification engine. The identification engine receives the intrinsic feature, generates a first authentication value using the intrinsic feature, and stores the authentication value in memory. The self-test engine generates a second authentication value using an authentication challenge. The identification engine includes a compare circuitry that compares the first authentication value and the second authentication value and generates an authentication output value based on the results of the compare of the two values.