Patents by Inventor Toshifumi Wakano

Toshifumi Wakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9344662
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: May 17, 2016
    Assignee: Sony Corporation
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Publication number: 20160126266
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Application
    Filed: January 12, 2016
    Publication date: May 5, 2016
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 9324753
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: April 26, 2016
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Publication number: 20160079296
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Application
    Filed: November 19, 2015
    Publication date: March 17, 2016
    Inventor: Toshifumi Wakano
  • Publication number: 20160065875
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Application
    Filed: November 6, 2015
    Publication date: March 3, 2016
    Applicant: Sony Corporation
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Publication number: 20160020236
    Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.
    Type: Application
    Filed: March 3, 2014
    Publication date: January 21, 2016
    Applicant: SONY CORPORATION
    Inventors: Yosuke TANAKA, Toshifumi WAKANO, Keiji TATANI, Takashi NAGANO, Hayato IWAMOTO, Keiichi NAKAZAWA, Tomoyuki HIRANO, Shinpei YAMAGUCHI, Shunsuke MARUYAMA
  • Patent number: 9224778
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: December 29, 2015
    Assignee: SONY CORPORATION
    Inventor: Toshifumi Wakano
  • Publication number: 20150372043
    Abstract: A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region.
    Type: Application
    Filed: September 1, 2015
    Publication date: December 24, 2015
    Inventors: Takuya Sano, Toshifumi Wakano
  • Publication number: 20150326807
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Application
    Filed: April 17, 2015
    Publication date: November 12, 2015
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Publication number: 20150237279
    Abstract: A solid state image pickup device is provided that includes a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the plurality of pixels. The capacitor is operatively configured as a stacked capacitor or a trench capacitor.
    Type: Application
    Filed: May 1, 2015
    Publication date: August 20, 2015
    Inventors: Toshifumi Wakano, Keiji Mabuchi
  • Patent number: 9077922
    Abstract: A solid state image pickup device is provided that includes a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the plurality of pixels. The capacitor is operatively configured as a stacked capacitor or a trench capacitor.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: July 7, 2015
    Assignee: SONY CORPORATION
    Inventors: Toshifumi Wakano, Keiji Mabuchi
  • Publication number: 20150155317
    Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.
    Type: Application
    Filed: February 11, 2015
    Publication date: June 4, 2015
    Inventors: Keiji Mabuchi, Toshifumi Wakano, Ken Koseki
  • Patent number: 9049393
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: June 2, 2015
    Assignee: SONY CORPORATION
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Publication number: 20150129943
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 14, 2015
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 9029925
    Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: May 12, 2015
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Toshifumi Wakano, Ken Koseki
  • Publication number: 20150009384
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Application
    Filed: September 24, 2014
    Publication date: January 8, 2015
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Patent number: 8885083
    Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: November 11, 2014
    Assignee: Sony Corporation
    Inventors: Toshifumi Wakano, Fumihiko Koga
  • Publication number: 20140239433
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Application
    Filed: September 27, 2012
    Publication date: August 28, 2014
    Inventor: Toshifumi Wakano
  • Patent number: 8767109
    Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: July 1, 2014
    Assignee: Sony Corporation
    Inventors: Shunsuke Maruyama, Junichiro Fujimagari, Toshifumi Wakano, Torii Motonobu, Hoshi Hironori, Kikuchi Koji
  • Patent number: 8754966
    Abstract: Disclosed herein is an image processing apparatus including: a storage section configured to store a correction matrix correcting crosstalk generated by a light or electron leak from an adjacent pixel existing among a plurality of pixels for receiving light in an imaging device; and a processing section configured to carry out processing to apply the correction matrix stored in the storage section to an image signal generated by the imaging device for each of the pixels.
    Type: Grant
    Filed: August 8, 2013
    Date of Patent: June 17, 2014
    Assignee: Sony Corporation
    Inventors: Koji Kikuchi, Shigeyuki Baba, Toshifumi Wakano