Abstract: An imaging device comprises a sensor substrate including a pixel array that includes at least a first pixel. The first pixel includes an avalanche photodiode including a light receiving region, a cathode, and an anode. The first pixel includes a wiring layer electrically connected to the cathode and arranged in the sensor substrate such that the wiring layer is in a path of incident light that exits the light receiving region.

Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device that are configured to suppress the occurrence of noise and white blemishes in an amplification transistor having an element separation region which is formed by ion implantation. An amplification transistor has an element separation region formed by ion implantation. A channel region insulating film which is at least a part of a gate insulating film above a channel region of the amplification transistor is thin compared to a gate insulating film of a selection transistor, and an element separation region insulating film which is at least a part of a gate insulating film above the element separation region of the amplification transistor is thick compared to the channel region insulating film. The present disclosure can be applied to, for example, a CMOS image sensor, etc.

Abstract: An imaging device includes a first chip (12). The first chip includes a first pixel (21) and a second pixel (21). The first pixel includes a first anode region (31) and a first cathode region (32), and the second pixel includes a second anode region (31) and a second cathode region (32). The first chip includes a first wiring layer (23). The first wiring layer includes a first anode electrode (37), a first anode via (38) coupled to the first anode electrode (37) and the first anode region (31), and a second anode via (38) coupled to the first anode electrode (37) and the second anode region (31).

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity. In a pixel array unit, pixels are formed with a combination of a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a fifth color component with a second photoelectric conversion unit; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and on light of a sixth color component with a second photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.

Abstract: Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device includes a silicon substrate, and at least a first photodiode formed in the silicon substrate. The device also includes an epitaxial layer with a first surface adjacent a surface of the silicon substrate, and a transfer transistor with a gate electrode that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Abstract: This technology relates to an imaging apparatus and an electronic device structured to perform pupil correction appropriately. There are provided a photoelectric conversion film configured to absorb light of a predetermined color component to generate signal charges, a first lower electrode configured to be formed under the photoelectric conversion film, a second lower electrode configured to be connected with the first lower electrode, a via configured to connect the first lower electrode with the second lower electrode, and a photodiode configured to be formed under the second lower electrode and to generate signal charges reflecting the amount of incident light. A first distance between the center of the photodiode and the center of the via at the center of the angle of view is different from a second distance therebetween at an edge of the angle of view. The present technology can be applied to imaging apparatuses.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.

Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.

Abstract: Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel transistor group excluding transfer transistors is shared by a plurality of photoelectric conversion portions; transfer wiring lines which are connected to the transfer gate electrodes of the transfer transistors of the pixel sharing unit and which are disposed to extend in a horizontal direction and to be in parallel in a vertical direction as seen from the top plane; and parallel wiring lines which are disposed to be adjacent to the necessary transfer wiring lines in the pixel sharing unit and which are disposed to be in parallel to the transfer wiring lines as seen from the top plane, wherein voltages which are used to suppress potential change of the transfer gate electrodes are supplied to the parallel wiring lines.