Patents by Inventor Toshifumi Wakano

Toshifumi Wakano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10075659
    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: September 11, 2018
    Assignee: SONY CORPORATION
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
  • Patent number: 10074678
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: September 11, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20180240847
    Abstract: The present technology relates to a back surface irradiation type imaging element having an organic photoelectric conversion film capable of preventing color mixing and securing dynamic range, a method of manufacturing the same, and an electronic apparatus. An imaging element according to an aspect of the present technology includes a photoelectric conversion film provided on one side of a semiconductor substrate, a pixel separation section formed in an inter-pixel region, and a through electrode that transmits a signal, corresponding to an electric charge obtained by photoelectric conversion in the photoelectric conversion film, to a wiring layer formed on the other side of the semiconductor substrate, the through electrode being formed in the inter-pixel region. The present technology is applicable to a back surface irradiation type CMOS image sensor.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 23, 2018
    Inventors: Kazunobu OTA, Mitsuru SATO, Toshifumi WAKANO
  • Publication number: 20180240834
    Abstract: The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.
    Type: Application
    Filed: March 17, 2016
    Publication date: August 23, 2018
    Inventors: YUSUKE TANAKA, TAKASHI NAGANO, TOSHIFUMI WAKANO, TAKESHI MATSUNUMA
  • Patent number: 10050070
    Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: August 14, 2018
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yusuke Otake, Toshifumi Wakano
  • Patent number: 10002897
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: June 19, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 9978799
    Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: May 22, 2018
    Assignee: Sony Corporation
    Inventor: Toshifumi Wakano
  • Patent number: 9947703
    Abstract: The present disclosure relates to a solid-state imaging device that can be made smaller in size, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a photoelectric conversion film that performs photoelectric conversion of light emitted from the back surface side of the semiconductor substrate. Also, in each pixel, a charge accumulation layer is formed to be in contact with the photoelectric conversion film on the back surface of the semiconductor substrate, a transfer path unit is formed to extend from the charge accumulation layer to a point near the front surface of the semiconductor substrate, and a memory unit is disposed near the back surface side of the semiconductor substrate, with a charge transfer gate being interposed between the memory unit and the transfer path unit.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: April 17, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenji Azami, Yusuke Otake, Yuko Ohgishi, Toshifumi Wakano, Atsushi Toda
  • Publication number: 20180097036
    Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
    Type: Application
    Filed: October 24, 2017
    Publication date: April 5, 2018
    Inventors: Yusuke OTAKE, Toshifumi WAKANO
  • Publication number: 20180098007
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic device for suppressing deterioration of pixel characteristics while guaranteeing the operating range of VSLs. A solid-state imaging device according to a first aspect of this disclosure has multiple pixel sharing units each including multiple photoelectric conversion sections each configured to correspond to a pixel, an accumulation section configured to be shared by the plurality of photoelectric conversion sections and to accumulate charges generated thereby, and multiple transistors configured to control reading of the charges accumulated in the accumulation section. The plurality of transistors in each pixel sharing unit are arranged symmetrically. The plurality of transistors include a transistor that functions as a switch to change conversion efficiency. The present disclosure may be applied to back-illuminated CMOS image sensors, for example.
    Type: Application
    Filed: March 24, 2016
    Publication date: April 5, 2018
    Inventors: Takuya SANO, Toshifumi WAKANO
  • Publication number: 20180090533
    Abstract: A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
    Type: Application
    Filed: April 13, 2016
    Publication date: March 29, 2018
    Inventors: Yusuke OTAKE, Toshifumi WAKANO
  • Publication number: 20180083062
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 22, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20180069045
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 8, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20180054581
    Abstract: To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other.
    Type: Application
    Filed: March 4, 2016
    Publication date: February 22, 2018
    Inventors: Takuya SANO, Toshifumi WAKANO
  • Publication number: 20180027171
    Abstract: The present disclosure relates to an image pickup device that inhibits color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section; an upper electrode section that is one of electrodes disposed facing each other, the upper electrode section being formed on a light incident side first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other, the lower electrode section being formed on an opposite side of the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.
    Type: Application
    Filed: January 29, 2016
    Publication date: January 25, 2018
    Inventors: Kyohei YOSHIMURA, Toshifumi WAKANO, Yusuke OTAKE
  • Patent number: 9865633
    Abstract: A solid-state imaging device in which the potential of a signal line, which is obtained before a pixel has an operating period, is fixed to an intermediate potential between a first power-supply potential and a second power-supply potential.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: January 9, 2018
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Toshifumi Wakano, Ken Koseki
  • Patent number: 9865643
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: January 9, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20170358614
    Abstract: The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus.
    Type: Application
    Filed: January 8, 2016
    Publication date: December 14, 2017
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: KENJI AZAMI, YUSUKE OTAKE, TOSHIFUMI WAKANO
  • Patent number: 9806120
    Abstract: A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: October 31, 2017
    Assignee: Sony Corporation
    Inventors: Takuya Sano, Toshifumi Wakano
  • Publication number: 20170302872
    Abstract: The present technology relates to a solid-state imaging device, a signal processing method, and an electronic device capable of appropriately adding signals of a plurality of pixels. —The solid-state imaging device is provided with a pixel array unit in which pixel units which output electric signals obtained by photoelectric conversion are arranged at least in a horizontal direction and a shared VSL being a vertical signal line (VSL) shared by a plurality of pixel units adjacent to each other in the horizontal direction, and the electric signals output from the plurality of pixel units which shares the shared VSL are added on the shared VSL. The present technology may be applied to an image sensors and the like which takes an image, for example.
    Type: Application
    Filed: September 17, 2015
    Publication date: October 19, 2017
    Inventors: Yusuke TANAKA, Toshifumi WAKANO