Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: A wafer processing apparatus includes a controller connected to a first robot and a second robot. The controller controls the first robot so that the wafer is placed on a first load lock stage in such a way that the center of the wafer is shifted from the center of the first load lock stage by a first position shift amount and another wafer is placed on a second load lock stage in such a way that the center of the wafer is shifted from the center of the second load lock stage by a second position shift amount. The controller controls the second robot so that the second robot simultaneously conveys two wafers between the first and second load lock stages, and a first processing stage and a second processing stage.

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

Abstract: A wafer processing apparatus includes a controller connected to a first robot and a second robot. The controller controls the first robot so that the wafer is placed on a first load lock stage in such a way that the center of the wafer is shifted from the center of the first load lock stage by a first position shift amount and another wafer is placed on a second load lock stage in such a way that the center of the wafer is shifted from the center of the second load lock stage by a second position shift amount. The controller controls the second robot so that the second robot simultaneously conveys two wafers between the first and second load lock stages, and a first processing stage and a second processing stage.

Abstract: A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface and etching the film, wherein the deposition and the etching are separately controlled, and wherein the conditions for deposition can be controlled by controlling RF power.

Abstract: A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface and etching the film, wherein the deposition and the etching are separately controlled, and wherein the conditions for deposition can be controlled by controlling RF power.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately non-linear cross section, and protrude into the surface of the dielectric plate. Such structural features may include feature depth, width, and periodic patterns that may vary depth and width along the concentric rings.

Abstract: A method of forming layers of film on a patterned surface, including depositing a film on the patterned surface during a PEALD/PPECVD process in a processing apparatus and etching the film during the etching process in the processing apparatus.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract: A plasma processing apparatus includes a processing chamber that air-tightly accommodates a substrate; a microwave supply unit that radiates microwaves into the processing chamber; a processing gas supply unit that supplies a processing gas into the processing chamber; and a substrate holding mechanism that holds the substrate within the processing chamber. A support shaft vertically passes through the bottom surface of the processing chamber to support the bottom surface of the substrate holding mechanism, and a rotary driving mechanism is provided outside the processing chamber to rotate the support shaft. In addition, a magnetic fluid seal air-tightly closes a gap between the support shaft and the processing chamber, and a choke mechanism is provided above the magnetic fluid seal to suppress the magnetic fluid seal from being heated by leakage of microwaves from the gap between the support shaft and the processing chamber.

Abstract: Disclosed is a method of anisotropically etching a transition metal film using a substrate processing apparatus including at least one processing container configured to perform a processing on a workpiece including the transition metal film. The method includes an oxidation step of introducing a first gas containing an oxygen ion into the processing container and irradiating the transition metal film with the oxygen ion to oxidize a transition metal of the transition metal film, thereby forming a metal oxide layer; and a complexation/etching step of introducing a second gas for complexation of the metal oxide layer into the processing container and forming a metal complex in the metal oxide layer, thereby performing an etching.

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table provided in the processing container and configured to place a substrate thereon, a plasma generating mechanism attached to the processing container to face the placing table and configured to supply electronic energy for plasma generation into the processing container, a lattice-shaped member or a plurality of rod-shaped members provided at a position closer to the placing table than an intermediate position between the placing table and the plasma generating mechanism, and a moving mechanism configured to move the lattice-shaped member or the plurality of rod-shaped members and the placing table relative to each other.

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract: Disclosed is a plasma processing apparatus including: a processing container; and a partition plate made of an insulating material, having a plurality of openings, and configured to partition an inside of the processing container into a plasma generating chamber and a processing chamber. A first conductive member made of a conductive material is provided on a surface of the processing chamber side of the partition plate, and the first conductive member is applied with at least one of an AC voltage, and a DC voltage of a polarity that is opposite to a polarity of charged particles guided from the plasma generating chamber into the processing chamber through each of the openings.

Abstract: Disclosed is a plasma processing apparatus including a processing container configured to air-tightly accommodate a substrate; and a placing table provided in the processing container and configured to place the substrate thereon. A surface of a support member that is exposed to plasma in the processing container and configured to support a top plate portion of the processing container, and a surface of a member that is exposed to plasma in the processing container and continued from the support member, are coated with different materials.