Abstract: Provided is a plasma processing apparatus that processes a substrate by converting a processing gas into plasma. A plurality of rotatable substrate stages are provided at a lower side within a processing container. An upper electrode is provided at an upper side within the processing container. The upper electrode is supplied with a high frequency wave from a high frequency power source to convert a processing gas supplied into the processing container into plasma. The upper electrode is rotatable about a vertical portion of an electrode support member by a driving mechanism and a rotary mechanism.

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract: A film forming apparatus includes: a mounting table configured to place a substrate thereon and to be rotatable around an axis; a unit provided in a first region such that its bottom surface faces the mounting table and having first and second buffer spaces therein; and a flow rate controller that independently controls flow rates of a precursor gas supplied to the first and second buffer spaces. In the bottom surface, the unit includes: an inside injection section including injection ports communicated with the first buffer space and configured to inject the precursor gas supplied to the first buffer space; and an intermediate injection section including injection ports communicated with the second buffer space and configured to inject the precursor gas supplied to the second buffer space. All the first injection ports are provided at a location closer to the axis, as compared to the second injection ports.

Abstract: Disclosed is a plasma processing apparatus that turns a processing gas into plasma so as to process a substrate. The plasma processing apparatus includes: a processing container configured to hermetically accommodate a substrate therein; a placement table installed on a bottom surface of the processing container, and configured to place the substrate thereon; a gas supply mechanism configured to supply at least one of a processing gas and a purge gas to an inside of the processing container through a gas supply pipe; a plasma generating mechanism configured to generate plasma of the processing gas within the processing container; an exhaust mechanism configured to exhaust the inside of the processing container through an exhaust pipe; and an ultrasonic vibration generating mechanism configured to apply ultrasonic vibration to a corner portion within the processing container.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. Such structural features define a surface shape, on a surface that faces the plasma. Such structural features can include a set of concentric rings having an approximately non-linear cross section, and protrude into the surface of the dielectric plate. Such structural features may include feature depth, width, and periodic patterns that may vary depth and width along the concentric rings.

Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.

Abstract: A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. The antenna includes a plurality of protrusions made of a dielectric material extending out into the processing space through the plurality of openings. The microwaves are introduced around the predetermined axis.

Abstract: Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. The processing gas diffusion mechanism includes a first diffusion chamber and a second diffusion chamber which are provided in multiple stages, and the first diffusion chamber is located above the second diffusion chamber, and the first diffusion chamber and the second diffusion chamber communicate with each other through a plurality of processing gas communication paths.

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract: Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Abstract: A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container.

Abstract: A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.