Abstract: A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power.

Abstract: A semiconductor laser element comprising a first stripe and a second stripe which are formed at a distance, and emits a first laser beams and a second laser beams from end surfaces of the first stripe and the second stripe; a first lens to separate the distance between the first laser beams and the second laser beams emitted from the semiconductor laser element; a half-wave plate which rotates the plane of polarization of the first laser beams by 90 degrees; a polarization beam combiner which multiplexes the first laser beams and the second laser beams which are entered, and emits both the laser beams; and an optical fiber which receives the laser beams emitted from the polarization beam combiner, and sends them to the outside are included.

Abstract: An optical semiconductor device module includes an optical semiconductor device package, an optical semiconductor device such as a laser diode accommodated in the package, and a cooling area on an inner face of a metal bottom plate of the package and operable to cool the optical semiconductor device. A groove permitting molten solder to flow therein is formed in at least part of the solder joint area on the inner face of the metal bottom plate.

Abstract: A semiconductor laser module is packaged on a mounting substrate through a thermal diffusion sheet member. The thermal diffusion sheet member is that having thermal conductivity where thermal conductivity in the surface direction is greater than that in the thickness direction. Specifically, the thermal diffusion sheet member is graphite, for example, and has a thermal conductivity of 300 W/m.K or greater in the surface direction.

Abstract: A semiconductor laser device including a semiconductor laser element, a temperature measuring element to measure a temperature, and a temperature regulating unit having the laser element and the temperature measuring element thermally connected thereto. The laser device includes a current detecting unit to detect a driving current applied to the laser element, and a control unit to control the temperature regulating unit using a control function to achieve a substantially constant wavelength output from the laser element. The control function defines a relationship between a predetermined driving current and a predetermined temperature. The control unit is configured to control the temperature regulating unit such that the detected temperature substantially equals the predetermined temperature corresponding to the detected driving current as defined by the control function.

Abstract: A semiconductor laser module according to the present invention has a semiconductor laser element for outputting a laser beam and a package hermitically containing and sealing the semiconductor laser element. The package has a vent for introducing and/or exhausting a low heat conduction type gas into or from the package. The vent is hermetically sealed by swaging and welding the external end thereof after the low heat conduction type gas has been introduced into or exhausted form the package.

Abstract: In a semiconductor laser module of the present invention, an FBG is disposed at the rear of a semiconductor laser device through a lensed fiber to define a cavity between the FBG and the semiconductor laser device. The reflectivity of an antireflection coating on a front end face of the semiconductor laser device is set to 1% or more, and the reflectivity of an antireflection coating on a rear end face of the semiconductor laser device is set to 0.5% or less. An isolator is disposed between a collimating lens and a condenser which are disposed in front of the semiconductor laser device. The FBG is formed in the lensed fiber. Two or more FBGs identical or different in the reflection center wavelength are disposed in the lensed fiber. The full width at half maximum of the FBG is set to 1 to 5 nm, and the reflectivity of the FBG is set to 50% or more. The semiconductor laser module is used in a Raman amplifier.

Abstract: At least one bevel is formed on the top of a heat sink on which a semiconductor laser diode is placed, the bevel being sloped from either side of first or second optical system downwardly toward the bottom of the heat sink. Thus, the heat radiation area of the heat sink can be increased without blocking of the laser beam emitted from the semiconductor laser diode and without engagement of the heat sink with the first and second optical systems. As a result, the optical output of a semiconductor laser module using such a semiconductor laser diode can be increased. The semiconductor laser module can be applied to even a pump light source used in Raman amplification and required to have a high-power.

Abstract: A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 &mgr;m, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 &mgr;m is determined to be selected.

Abstract: A laser beam synthesizing member of a semiconductor laser module used as an optical amplifier that has a prism configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member configured to synthesize the plurality of laser beams once passed from the prism, and a holder member configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part on which a first laser beam is incident, at least one other input part on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

Abstract: A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.

Abstract: In a semiconductor pumping light source module according to the present invention, a fiber grating (FBG) is disposed, outside a ferrule, in an optical fiber that is inside a protective tube to define a cavity between the FBG and the semiconductor laser device. The FBG is disposed, outside the ferrule, in the optical fiber that is inside the protective tube inside a protective boot. The FBG is disposed on the optical fiber at a portion where no adhesive exists inside the protective tube. The semiconductor pumping light source module is used as a pumping light source of the optical amplifier. The semiconductor pumping light source is also used as the pumping light source of a Raman amplifier.

Abstract: A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.

Abstract: An optical fiber with holding member according to the present invention has an optical fiber including a diffraction grating formed therein for reflecting only a laser beam having a predetermined wavelength range, and a ferrule into which the optical fiber is inserted and supported. The portion of the optical fiber on which the diffraction grating is formed extends outwardly beyond the end of the ferrule.

Abstract: One viewpoint of the invention intends to improve the working efficiency of fabricating a semiconductor laser module. For example, each of conductive connectors is fixed to both ends of insulation coated conductors to form conductors equipped with the conductive connectors. Pins of an inner module (case) are inserted and fixed to the conductive connectors on one end side of the insulation coated conductors. Pins of a package are inserted and fixed to the conductive connectors on the other end side. A semiconductor laser device housed inside the inner module can be conducted and connected to outside the package through the pins, the insulation coated conductors and the pins. Simple work only to insert and fix the pins to the conductive connectors can conduct and connect the pins to the pins and the working efficiency of fabricating the semiconductor laser module can be enhanced.

Abstract: The invention provides a semiconductor laser module of high output in which the radiating property of heat generated from a semiconductor laser element is high, and power consumption is small. In this semiconductor laser module, a base is arranged on a Peltier module, and has a basic portion having a face fixed to the Peltier module and a stem supporting portion rising on the basic portion. The base is formed by a material having a preferable coefficient of thermal conductivity. An internal module has the semiconductor laser element attached to a stem, an optical fiber for receiving a laser beam, and a member such as a lens for coupling the laser beam to the optical fiber. When this internal module is fixed to the base, the stem comes in contact with a stem supporting face of the stem supporting portion, and is fixed to the stem supporting face. The heat generated from the semiconductor laser element is directly transmitted from the stem to the base without passing a cap attached to the stem.

Abstract: An optical semiconductor device module includes an optical semiconductor device package, an optical semiconductor device such as a laser diode accommodated in the package, and a cooling device such as a Peltier device solder-joined to a solder joint area on an inner face of a metal bottom plate of the package and operable to cool the optical semiconductor device. A groove permitting molten solder to flow therein is formed in at least part of the solder joint area on the inner face of the metal bottom plate.

Abstract: A semiconductor laser unit and a semiconductor laser module in one example of the invention improve the radiating property of heat generated from a semiconductor laser and restrain power consumption. A welding auxiliary member is fixedly attached by e.g., blazing to a stem for fixing the semiconductor laser in a position welded and joined to a cap. The cap is welded and joined to this welding auxiliary member. Thus, the stem and the cap are joined to each other through the welding auxiliary member. Since a constructional material of the stem can be selected without considering welding property, the stem can be constructed by a material having a good coefficient of thermal conductivity. Heat generated from the semiconductor laser is efficiently emitted to the exterior through the stem, and the radiating property of the generated heat of the semiconductor laser can be improved.

Abstract: A method, system and computer program product for assembling an optical module incorporates a far field pattern (FFP) optical measurement system and optionally a near field pattern (NFP) optical measurement system to obtain information about the axis and/or the divergent angle of light output from the optical elements to be assembled as part of the optical module. The optical elements include a light-emitting element, such as a laser diode, and at least one optical component, such as a collimating lens or a focusing lens. The system for assembling the optical module further includes a stage having the light-emitting element mounted thereon, a holding mechanism configured to hold and position the optical components to desired positions based on the measurements from the FFP and/or NFP optical measurement systems. A controller can control the stage, the holding mechanism and a fixing device configured to fix the positions of the optical elements once the optical elements are positioned in the desired positions.

Abstract: Cycloolefin resin pellets of the present invention comprises a cycloolefin resin pellet and a powdery coating material and/or a liquid coating material, the melting point or the glass transition point of the coating material being 200° C. or lower, and the coating material being adhered onto the surface of the cycloolefin resin pellets, so that the molded product thereof is excellent in transparency.