Abstract: An adhesive composition of the present invention includes a polymer as a main component. The polymer is produced by copolymerization of a monomer composition which includes chain-structured alkyl (meth)acrylate and a monomer containing a maleimide group. This makes it possible to provide an adhesive composition used for forming an adhesive layer in which adhesive strength is kept in a high temperature environment. That is, it becomes possible to provide an adhesive composition that allows forming an adhesive layer which has high adhesive strength in a high temperature environment (particularly at 200° C. to 250° C.).

Abstract: In a reference (n-th) machining pass, the wire travels along a machining route RTn and passes through a reentrant angular corner with wire position WMn, producing a workpiece edge Hn. In the following (n+1)-th machining pass, the wire travels along a machining route RTn+1, but the straight sections preceding and following the corner are replaced with a circular arc route so that the wire passes smoothly through a straight route, then a circular arc route, and then a straight route. The radius of curvature of the circular arc route is determined in the controller on the basis of the difference between the offset specified for the reference (n-th) machining pass and the offset specified for the (n+1)-th pass in which the circular arc route is inserted. Accordingly, the machining margin does not increase in the reentrant angular corner and the machining accuracy is thereby improved.

Abstract: This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n? represents an integer of 1 to 3.

Abstract: The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.

Abstract: The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R??(1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-A?O—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: Mechanisms are provided for compensating for process and temperature variations in a circuit. The mechanisms may select at least one resistor in a plurality of resistors in the circuit to provide a resistance value for generating a calibration voltage input to the circuit to compensate for variations in process. A reference signal may be compared to a feedback signal generated by the circuit based on the calibration signal. A determination is made as to whether the feedback signal is within a tolerance of the reference signal and, if so, an identifier of the selected at least one resistor is stored in a memory device coupled to the circuit. The circuit may be operated using the selected at least one resistor based on the identifier stored in the memory device. An apparatus and integrated circuit device utilizing these mechanisms are also provided.

Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.

Abstract: The invention provides a steel pipe excellent in deformation characteristics, most notably a steel pipe for expandable-pipe oil well and a low-yield-ratio line pipe, and a method of producing the same without conducting water cooling requiring large-scale heat treatment equipment, namely a method of producing a steel pipe excellent in deformation characteristics whose microstructure is a two-phase structure including a martensite-austenite constituent at an area fraction of 2 to 10% and a soft phase, which method comprises: heating at Ac1+10° C. to Ac1+60° C. and thereafter cooling a precursor steel pipe which contains, in mass %, C: 0.04 to 0.10% and Mn: 1.00 to 2.50%, is limited to Si: 0.80% or less, P: 0.03% or less, S: 0.01% or less, Al: 0.10% or less and N: 0.01% or less, further contains one or more of Ni: 1.00% or less, Mo: 0.60% or less, Cr: 1.00% or less and Cu: 1.00% or less, where content of Mn and content of one or more of Cr, Ni, Mo and Cu satisfy Mn+Cr+Ni+2Mo+Cu?2.

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.

Abstract: A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a1) represented by general formula (I) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R1? represents a hydrogen atom or a lower alkyl group; n represents an integer of 0 to 3; R1 represents a lower alkyl group, a fluorine atom, or a fluorinated lower alkyl group; and p represents an integer of 0 to 2.

Abstract: An adhesive composition is disclosed which includes a polymer prepared by copolymerizing a monomer containing a polymerizable group, the polymer including a low-molecular-weight component having a molecular weight equivalent to 1% or less of the weight-average molecular weight of the polymer, the low-molecular-weight component is contained in a range of not less than 0 weight % to less than 0.3 weight % of the total weight of the polymer. This allows provision of an adhesive composition having great adhesive strength in a high-temperature environment, especially at temperatures from 140° C. to 200° C., as well as high heat resistance and favorable crack resistance.

Abstract: A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.

Abstract: A speed region of a motor is divided into a region lower than a first switch speed VS1, a region higher than a second switch speed VS2 and a region between the first and second switch speeds. An abnormal load determination level to be compared with an estimated load obtained by an observer is set for each of the regions. An abnormal load determination level AL4 applied when an acceleration exceeds a threshold value is set. The abnormal load determination level AL4 is used for comparison with the estimated load until a predetermined period of time elapses after the acceleration to be commanded to the motor, which once exceeded the threshold level, drops. In other cases, the estimated load is compared with the abnormal load determination level having a value according to the speed. If the estimated load exceeds the compared abnormal load determination level, it is judged that a collision is detected.

Abstract: Mechanisms are provided for compensating for process and temperature variations in a circuit. The mechanisms may select at least one resistor in a plurality of resistors in the circuit to provide a resistance value for generating a calibration voltage input to the circuit to compensate for variations in process. A reference signal may be compared to a feedback signal generated by the circuit based on the calibration signal. A determination is made as to whether the feedback signal is within a tolerance of the reference signal and, if so, an identifier of the selected at least one resistor is stored in a memory device coupled to the circuit. The circuit may be operated using the selected at least one resistor based on the identifier stored in the memory device. An apparatus and integrated circuit device utilizing these mechanisms are also provided.

Abstract: Disclosed is a composition for formation of a mold, which is used in a method for producing a nanostructure by removing a portion of a thin film formed on the surface of a mold, and removing the mold, the composition including an organic compound, which has a hydrophilic group and has a molecular weight of 500 or more.

Abstract: A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.

Abstract: An adhesive composition of the present invention includes a polymer as a main component. The polymer is produced by copolymerization of a monomer composition which includes chain-structured alkyl (meth)acrylate and a monomer containing a maleimide group. This makes it possible to provide an adhesive composition used for forming an adhesive layer in which adhesive strength is kept in a high temperature environment. That is, it becomes possible to provide an adhesive composition that allows forming an adhesive layer which has high adhesive strength in a high temperature environment (particularly at 200° C. to 250° C.).

Abstract: This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n? represents an integer of 1 to 3.