Abstract: The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.

Abstract: A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.

Abstract: There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask. The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.

Abstract: In a reference (n-th) machining pass, the wire travels along a machining route RTn and passes through a reentrant angular corner with wire position WMn, producing a workpiece edge Hn. In the following (n+1)-th machining pass, the wire travels along a machining route RTn+1, but the straight sections preceding and following the corner are replaced with a circular arc route so that the wire passes smoothly through a straight route, then a circular arc route, and then a straight route. The radius of curvature of the circular arc route is determined in the controller on the basis of the difference between the offset specified for the reference (n-th) machining pass and the offset specified for the (n+1)-th pass in which the circular arc route is inserted. Accordingly, the machining margin does not increase in the reentrant angular corner and the machining accuracy is thereby improved.

Abstract: A machining program generating device and a wire-cut electric discharge machine that can shorten a machining time to machine multiple punch shapes. A distance L from one punch shape machining end position Pe to a next punch shape machining start position Ps is obtained. When the distance L is shorter than a predetermined value, the electric discharge machining is performed between the machining end position Pe and the machining start position Ps. When the distance L is equal to or longer than that a predetermined value, the wire is cut at the machining end position Pe and connected at the machining start position Ps to restart the electric discharge machining. By continuing the electric discharge machining when the distance L is shorter than the predetermined value, it is not necessary to carry out the processes of cutting and connecting the wire, and therefore the machining time is shortened.

Abstract: A positive resist composition for immersion exposure that includes a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the resin component (A) includes a resin (A1) that has alkali-soluble groups (i) having a hydrogen atom, and in a portion of these alkali-soluble groups (i), the hydrogen atom is substituted with an acid-dissociable, dissolution-inhibiting group (I) represented by a general formula (I) shown below [wherein, Z represents an aliphatic cyclic group; n represents either 0 or an integer from 1 to 3; and R1 and R2 each represent, independently, a hydrogen atom or a lower alkyl group of 1 to 5 carbon atoms].

Abstract: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition.

Abstract: A processing program is constituted by a main program and sub-programs, and a plurality of processing programs are stored in a storage means. Only main programs are extracted from the storage means and displayed on a display device by a list. Extraction of only the main program is performed by determining whether a program to be detected has a specific code included in only the main program or whether the program to be detected has a specific code included in only a sub-program.

Abstract: A machining configuration drawing apparatus includes a drawing unit for drawing a machining configuration and a present machining position, a setting unit for setting a display area in an overall drawing area, a division unit for dividing the overall drawing area into a plurality of display areas based on the set display area, and a selection unit for selecting a drawing region drawn by the drawing unit from a plurality of drawing regions. The selection unit selects a drawing region in which the present machining position exists. Further, the drawing unit draws a machining configuration and a present machining position of the selected drawing region.

Abstract: A method of forming a nano-structure can form a fine pattern easily, and the nano-structure obtained by the method is provided. A method of forming a nano-structure comprising forming a thin film by a liquid phase adsorption on surface of a template formed on a substrate, and removing a portion of the thin film, and removing the template is used.

Abstract: The nonwoven fabric production process of the invention comprises a laminating step in which composite yarn, obtained by bundling a plurality of resin single filaments each having a core-sheath structure with a filamentous core resin surrounded by a sheath resin with a melting point of at least 20° C. lower than the core resin and fusing the sheath resin together, is laminated in at least the three directions of warp direction, slant direction and reverse slant direction, and a bonding step of heating the laminated filament bundles at a temperature lower than the melting point of the core resin and higher than the melting point of the sheath resin for bonding. According to the invention, it is possible to provide a nonwoven fabric production process and nonwoven fabrics with excellent plasticity and shape following property, as well as adjustable strength for adaptation to different purposes and required properties.

Abstract: Provided are a polymer compound having high transparency for use in a photoresist composition for microfabrication of the next generation, a resist composition using the polymer compound as a base polymer, and a dissolution inhibitor agent composed of the polymer compound. To ensure etching resistance, an alicyclic group is introduced into a side chain portion. Hydrogen atoms on the ring of the alicyclic group are highly fluorinated to ensure transparency to light of 157 nanometer wavelength, represented by an adsorption coefficient equal to or less than 3.0 ?m?1. As the alicyclic group, a polycyclic group is preferably used. Hydrogen atoms are highly fluorinated by preferably substituting all hydrogen atoms on the ring by fluorine atoms, that is, forming a perfluoroalicyclic group. The resist composition is formed by using the polymer compound as a base polymer and further, the dissolution inhibitor agent is formed of the polymer compound.

Abstract: A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n??(1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4).

Abstract: A resist composition for liquid immersion lithography process, which comprises: (A) a polymer comprising (a1) alkali-soluble constitutional units each comprising an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, wherein the polymer changes in alkali-solubility due to the action of acid; and (B) an acid generator which generates acid due to exposure to light, and a method for forming a resist pattern using the resist composition. By the resist composition or the method, an adverse effect of the immersion liquid can be avoided while achieving high resolution and high depth of focus.

Abstract: The photoresist composition is formed by including the fullerene derivative (A) having two or more malonic ester residues. Preferably, the malonic ester residue is, a group is preferably expressed by the general formula (1) below. In the formula (1), R1 and R2 independently represent an alkyl group, which may be identical or different from each other. The alkyl group is a normal or branched chain, or cyclic alkyl group having 1 to 10 carbons, and n is an integer from 2 to 10.

Abstract: The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R??(1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).

Abstract: A monitoring device capable of automatically plotting a machining path according to a machining program to be executed or being executed for a machining apparatus in which workpieces and machining programs are automatically changed and executed successively. When a machining program is selected from machining managing means, the selected machining program is stored to be renewed in machining program execution means. When machining program analysis means determines the renewal of the machining program in the machining program, the machining program analysis means analyzes the machining program stored in the machining program execution means, so that a machining path according to the machining program is plotted on a display device.

Abstract: When the system is powered on, a BOOT device detecting unit detects which data exchange device (memory card or the like) is to be booted first, and the detected data exchange device is booted first. A data exchange process program which is set as software starting at BOOT is started to detect a data exchange file. At this time, with reference to a type code of a numerical control apparatus to be used, data matched to the type code is selected. A data exchange file is transferred to an internal storing device to which the data exchange device is connected. Then, a data exchange file is transferred to an internal storing device to which the data exchange device is not connected.

Abstract: Standard machining conditions are registered in advance for each workpiece material and other factors in correspondence to machining speed and precision. The standard machining conditions are selected for execution of machining. The machining precision is measured to determine whether or not the measured machining precision and machining speed (machining time) fall within an allowable target range. If they are not within the range, the machining conditions are modified and machining is executed again. This procedure is repeated until the machining speed and precision fall within the allowable range, at which point the machining conditions are additionally registered and stored. The added machining conditions can be used in the next machining process.

Abstract: A speed region of a motor is divided into a region lower than a first switch speed VS1, a region higher than a second switch speed VS2 and a region between the first and second switch speeds. An abnormal load determination level to be compared with an estimated load obtained by an observer is set for each of the regions. An abnormal load determination level AL4 applied when an acceleration exceeds a threshold value is set. The abnormal load determination level AL4 is used for comparison with the estimated load until a predetermined period of time elapses after the acceleration to be commanded to the motor, which once exceeded the threshold level, drops. In other cases, the estimated load is compared with the abnormal load determination level having a value according to the speed. If the estimated load exceeds the compared abnormal load determination level, it is judged that a collision is detected.