Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.

Abstract: The present disclosure provides a hydrogel composition including: a hydrogel having a structure represented by Formula (I) or Formula (II) shown as follows: A-B-BOX-B-A, Formula (I); B-A-B-(BOX-BAB)n-BOX-B-A-B, Formula (II), wherein, A is a hydrophilic polyethylene glycol polymer, B is a hydrophobic polyester polymer, BOX is a bifunctional group monomer of 2,2?-Bis(2-oxazoline) for coupling di-block of A-B or tri-block of B-A-B, and n is an integer greater than or equal to 0; and an anti-adhesion additive, wherein the anti-adhesion additive comprises a carbohydrate, a nitrogen-containing cyclic compound, a polymer or a combination thereof.

Abstract: A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.

Abstract: An electronic apparatus includes a base and an electronic device. The base includes a first main body and at least one first connection portion. The first connection portion includes a rotating component, and the rotating component is pivoted to the first main body and has a driven portion and a positioning portion. The electronic device includes a second main body and at least one second connection portion. The second connection portion includes an elastic component and a positioning trench. The elastic component is connected to the second main body, and the positioning trench is formed on the second main body. When the base supports the electronic device so that the first connection portion is aligned to the second connection portion, the elastic component pushes the driven portion such that the positioning portion is engaged into the positioning trench.

Abstract: A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate; a first nanowire disposed over the substrate; a second nanowire disposed over the substrate; a first pad formed at first ends of the first and second nanowires, a second pad formed at second ends of the first and second nanowires, wherein the pads comprise different materials than the nanowires; and a gate surrounding at least a portion of each of the first and second nanowires.

Abstract: A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.

Abstract: Systems and methods are disclosed for security monitoring using a mobile device by detecting an activation condition associated with an emergency; and capturing and sending emergency data stream including images or video, audio, and positioning coordinates to a cloud-based processor to store and forward to a predetermined circle of family and friends to allow them to view the stream of audio, images/video and positioning coordinates in real time.

Abstract: A method for forming germanium nanowires comprises forming a semiconductor fin structure including alternating fin and shallow trench structures, etching a top portion of the fin to form a fin recess and depositing a germanium-based semiconductor into the fin recess as a germanium-based plug. The method comprises etching the shallow trench structure to expose the germanium-based semiconductor side faces. The exposed germanium-based semiconductor undergoes annealing to form high carrier mobility nanowire structures. The nanowire structures can also be formed of different diameters by selective oxidation of some of the deposited germanium-based plugs. Alternately, forming fin structures of different widths results in deposited germanium plugs of different widths to be deposited to form different thicknesses of nanowires.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having gate structure thereon, wherein the gate structure comprises a high-k dielectric layer; increasing an ambient pressure around the gate structure to a predetermined pressure by injecting a first gas; reducing the ambient pressure to a base pressure; and forming a spacer around the gate structure.

Abstract: A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfCl4 pulse and applying H2O pulse over the substrate and a content ratio of HfCl4 to H2O is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract: A light emitting diode module includes a lead frame, a first light emitting diode chip, a second light emitting diode chip, an encapsulant, and a lens structure. The lead frame has a die-bonding surface and a side wall together defining an accommodating recess. The encapsulant is filled in the accommodating recess, and covers the first and the second light emitting diode chips. The lens structure disposed on the lead frame has a bottom surface, a reflective surface, a first, a second, a third, and a fourth light emitting curved surface. The light emitting curved surfaces are respectively disposed opposite to the bottom surface. An adjacent position among the light emitting curved surfaces is a lowest point nearest to the bottom surface. The first and the second light emitting diode chips are disposed at the projections of the first and the second light emitting curved surface on the die-bonding surface.

Abstract: A light emitting diode module includes a lead frame, a first light emitting diode chip, a second light emitting diode chip, an encapsulant, and a lens structure. The lead frame has a die-bonding surface and a side wall together defining an accommodating recess. The encapsulant is filled in the accommodating recess, and covers the first and the second light emitting diode chips. The lens structure disposed on the lead frame has a bottom surface, a reflective surface, a first, a second, a third, and a fourth light emitting curved surface. The light emitting curved surfaces are respectively disposed opposite to the bottom surface. An adjacent position among the light emitting curved surfaces is a lowest point nearest to the bottom surface. The first and the second light emitting diode chips are disposed at the projections of the first and the second light emitting curved surface on the die-bonding surface.

Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.