Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.

Abstract: An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.

Abstract: Disclosed is a bio sensing device including a medium layer, a light emitting element and an optical sensor. The light emitting element is configured to emit a light toward a user's skin layer, in which the light passes through the medium layer and has a maximum intensity in a first wavelength. The optical sensor is configured to receive a reflected part of the light from the user's skin layer, in which the reflected part of the light passes through the medium layer, and the medium layer has a first transmittance greater than 60% with respect to the first wavelength.

Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.

Abstract: An apparatus for managing buffers and a method thereof are provided. The method for managing buffers includes: receiving a plurality of pieces of data, where the plurality of pieces of data includes a first piece of data and a second piece of data; allocating at least one buffer to establish a cluster buffer according to a data amount of the first piece of data; and if at least one of a first condition and a second condition is satisfied, ending a storage operation of the cluster buffer, where the first condition is that a total remaining space of the at least one buffer that has stored the data in the cluster buffer is less than a remaining space threshold, and the second condition is that the quantity of the at least one buffer that has stored the data in the cluster buffer reaches a cluster threshold.

Abstract: A physical vapor deposition (PVD) system is disclosed. The PVD system includes a pedestal configured to hold a semiconductor wafer, a cover plate configured to hold a target, and a collimator between the pedestal and the cover plate. The collimator includes a plurality of passages configured to pass source material travelling from the cover plate toward the pedestal at an angle less than a threshold angle with respect to a line perpendicular to a surface of the pedestal facing the cover plate, where the collimator is configured to block source material travelling from the cover plate toward the pedestal at an angle greater than the threshold angle, where a first passage of the plurality of passages has a first passage length, where a second passage of the plurality of passages has a second passage length, and where the first passage length is less than the second passage length.

Abstract: An image quality improvement method and an image processing apparatus using the same are provided. Denoising filtering is performed to an original image by a filter to obtain a preliminary processing image. The preliminary processing image is input to a multi-stage convolutional network model to generate an optimization image through the multi-stage convolutional network model. The multi-stage convolutional network model includes multiple convolutional network sub-models, and these convolutional network sub-models respectively correspond to different network architectures.

Abstract: A wound capacitor package structure and a method of manufacturing the same are provided. The wound capacitor package structure includes a wound assembly, a conductive assembly, a package casing and a protruding sealing element. The conductive assembly includes a first conductive pin and a second conductive pin. The package casing is configured to receive the wound assembly. The protruding sealing element is arranged inside and cooperates with the package casing. The package casing is configured to receive the wound assembly. The protruding sealing element is disposed inside the package casing and cooperating with the package casing. The package casing has a surrounding concave position-limiting portion recessed inward, and a surrounding convex end portion protruding from the surrounding concave position-limiting portion.

Abstract: A glue dispenser dispensing switch includes a switching device main body, a needle holding base, a wear-resistant plate, and a rotating device. The switching device main body is equipped with a double liquid inlet, the needle holding base is equipped with a mixed glue outlet, the wear-resistant plate is installed between the switching device main body and the needle holding base, and the wear-resistant plate is equipped with a wear-resistant plate opening. The rotating device is utilized to rotate the needle holding base or the wear-resistant plate. A mixed double-liquid glue passes through the double liquid inlet, the wear-resistant plate opening and the glue outlet to dispense a mixed glue while the double liquid inlet, the wear-resistant plate opening and the glue outlet are overlapped. In addition, a double liquid dispensing equipment is also disclosed herein.

Abstract: A composition for preparing a foam, a foam, and a shoe employing the foam are provided. The composition for preparing a foam includes 3-30 parts by weight of a first polymer and at least one of a second polymer and a third polymer. The first polymer is cyclic olefin polymer (COP), cyclic olefin copolymer (COC), metallocene based cyclic olefin copolymer (mCOC), fully hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the second polymer and the third polymer is 70-97 parts by weight. The second polymer is polyolefin, olefin copolymer, or a combination thereof. The third polymer is conjugated diene-vinyl aromatic copolymer, partially hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the first polymer and at least one of the second polymer and the third polymer is 100 parts by weight.

Abstract: A glue dispensing device comprises a base, a pressure control unit, a quantitative glue supply unit and a glue dispensing needle. The base comprises a pressure control chamber and a glue tube body, the pressure control chamber is located inside the base, the glue tube body extends from one end of the base to the other end, and the glue tube body penetrates the pressure control chamber. The pressure control unit is coupled to the pressure control chamber. The quantitative glue supply unit is disposed at one end of the base body and is coupled to the glue tube body. The glue dispensing needle is disposed at the other end of the base and is coupled to the glue tube body. The glue dispensing device uses the pressure change of the pressure control chamber to deform the glue tube body, thereby achieving quantitative glue dispensing effect with accuracy and stability. In addition, a glue dispensing method is also disclosed.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: The present disclosure provides an inductance detection method includes steps of: (a) acquiring a stator resistance of the reluctance motor; (b) injecting a high-frequency sinusoidal signal in the d-axis or q-axis direction; (c) injecting an align signal command in the q-axis or d-axis direction; (d) receiving a dq-axes signal generated through injecting the high-frequency sinusoidal signal and the align signal command; (e) sampling a motor feedback signal generated through receiving the dq-axes signal; (f) in the direction of injecting the high-frequency sinusoidal signal, calculating an amplitude difference between the high-frequency sinusoidal signal and the motor feedback signal, and adjusting an amplitude of the high-frequency sinusoidal signal according to the amplitude difference for regulating a feedback amplitude of the motor feedback signal; and (g) when the feedback amplitude reaching an expected amplitude, calculating an apparent inductance of the reluctance motor based on the dq-axes signal, the

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: Provided are an actuator, method for manufacturing the actuator, and acoustic transmitter having the actuator. The actuator includes: an elastic metal member having a plurality of curved segments and a plurality of connection segments which constitute a ring structure with a long-axis direction and a short-axis direction; a multilayer piezoelectric member disposed within the ring structure and having a plurality of stacked piezoelectric units along the long-axis direction; and a plurality of coupling members disposed within the ring structure, wherein the multilayer piezoelectric member has two ends in the long-axis direction that are coupled to the connection segments of the elastic metal member in the long-axis direction. A preload stress is imparted to the elastic metal member. A plurality of coupling members having a size corresponding to the preload stress are disposed between the elastic metal member and the multilayer piezoelectric member.

Abstract: The present disclosure provides a chemical supply system, including a chamber, a tubing extending into the chamber, an interlock apparatus, including a fixture for fastening the tubing, and means for determining whether the tubing is fastened by the fixture.

Abstract: An electronic device and an electronic device operation method are disposed. The electronic device includes a flexible element and a controller. The flexible element includes a plurality of sensing electrodes. In a stacked state, a first portion of the flexible element overlaps a second portion of the flexible element. The controller is electrically connected to the plurality of the sensing electrodes of the flexible element. The controller receives a first signal from the plurality of sensing electrodes in the first portion and receives a second signal from the plurality of the sensing electrodes in the second portion.

Abstract: A semiconductor arrangement includes a first dielectric feature passing through a semiconductive layer and a first dielectric layer over a substrate. The semiconductor arrangement includes a conductive feature passing through the semiconductive layer and the first dielectric layer and electrically coupled to the substrate. The conductive feature is adjacent the first dielectric feature and electrically isolated from the semiconductive layer by the first dielectric feature.