Abstract: An isolation device for isolating leaked liquid coolant and an electronic equipment carrying same are disclosed. The isolation device includes a liquid cooling radiator, a fixing structure, and a detection device. The liquid cooling radiator includes a first housing and a second housing which are connected with each other and enclose a chamber allowing a liquid coolant to flow therethrough. The first housing defines a groove away from the chamber, a bottom wall of the groove including a first end and a second end lower than the first end. The fixing structure is disposed on the bottom wall and configured to fix a pipe. The groove is configured to receive liquid coolant leaked from a connection between the fixing structure and the pipe. The detection device is disposed on the second end and configured to detect presence of liquid.

Abstract: A light-emitting device includes a substrate including circuit pads and a resin portion. A frame disposed on the substrate to form a first space, first to third light sources, and first and second encapsulants. The frame includes an outer wall and a first partition in the first space to form the first space as independent second and third spaces. A first and second light sources are disposed at the second space and provide first and second light beams respectively. A third light source is disposed at the third space and provides a third light beam. A first encapsulant is filled at the second space to seal the first and second light sources. A second encapsulant is filled at the third space to seal the third light source. The second encapsulant includes a first wavelength conversion material converting the third light beam into a fourth light beam.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a semiconductor fin structure including first semiconductor layers and second semiconductor layers alternatingly stacked, laterally recessing the first semiconductor layers of the semiconductor fin structure to form first notches in the first semiconductor layers, forming first passivation layers on first sidewalls of the first semiconductor layers exposed from the first notches, and forming first inner spacer layers in the first notches.

Abstract: In a method of manufacturing a semiconductor device a fin structure is formed in which first semiconductor layers and second semiconductor layers are alternately stacked over a substrate. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure that is not covered by the sacrificial gate structure is etched to form a source/drain space. An isolation region is formed at a bottom portion of the source/drain space. A source/drain epitaxial layer is formed over the isolation region in the source/drain space, and a void region in the isolation region is produced between the source/drain epitaxial layer and the substrate to cause electrical isolation between the source/drain region and the substrate.

Abstract: A semiconductor chip includes an active device and a passive device formed over a substrate. A passivation layer covers the active device and the passive device. A barrier structure surrounds the active device. A ceiling layer is formed across the barrier structure over the active device. The ceiling layer has an opening exposing the barrier structure.

Abstract: A suspension system for an operator station of a work vehicle having a chassis includes a subframe structure, a plurality of mounting pads, a plurality of shock absorbers, a rear lateral rod, a front stabilizer, and a pitch control stabilizer. The plurality of mounting pads is positioned on a top surface of the subframe structure. The plurality of shock absorbers connects between the chassis and the subframe structure near each of the mounting pads. The rear lateral rod connects to the rear side of the subframe structure and to the chassis. The front stabilizer connects to the front side of the subframe structure and to the chassis. The pitch control stabilizer connects to the right side of the subframe structure and to the chassis.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a sacrificial gate structure over an active region. A first spacer layer is formed along sidewalls and a top surface of the sacrificial gate structure. A first protection layer is formed over the first spacer layer. A second spacer layer is formed over the first protection layer. A third spacer layer is formed over the second spacer layer. The sacrificial gate structure is replaced with a replacement gate structure. The second spacer layer is removed to form an air gap between the first protection layer and the third spacer layer.

Abstract: A mass transferring system and the method thereof are provided. The system includes two platforms and a plurality of picking and placing units. When the mass transferring process is performed for one of the substrates, the replacing process and the aligning process are simultaneously executed for another one of the substrates, such that the mass transferring process and the replacing process can be performed at the same time. Compared with the conventional mass transferring processes, the efficiency of the mass transferring system and the method thereof according to the present invention can be increased by 90%.

Abstract: A pressure sensor includes a first electrode, a plurality of cavities, and a second electrode. The second electrode is disposed opposite the first electrode through the plurality of cavities. The second electrode includes a flat structure spanning two adjacent cavities of the plurality of cavities.

Abstract: A suspension system for an operator station of a work vehicle having a chassis includes a subframe structure, a plurality of mounting pads, a plurality of shock absorbers, a rear lateral rod, a front stabilizer, and a pitch control stabilizer. The plurality of mounting pads is positioned on a top surface of the subframe structure. The plurality of shock absorbers connects between the chassis and the subframe structure near each of the mounting pads. The rear lateral rod connects to the rear side of the subframe structure and to the chassis. The front stabilizer connects to the front side of the subframe structure and to the chassis. The pitch control stabilizer connects to the right side of the subframe structure and to the chassis.

Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.

Abstract: Structures and methods for reducing process charging damages are disclosed. In one example, a silicon-on-insulator (SOI) structure is disclosed. The SOI structure includes: a substrate, a polysilicon region and an etch stop layer. The substrate includes: a handle layer, an insulation layer arranged over the handle layer, and a buried layer arranged over the insulation layer. The polysilicon region extends downward from an upper surface of the buried layer and terminates in the handle layer. The etch stop layer is located on the substrate. The etch stop layer is in contact with both the substrate and the polysilicon region.

Abstract: A teicoplanin derivative useful for treating an infectious disease, having the structure of formula (I): or the pharmaceutically acceptable salt, solvate, stereoisomer, derivative or prodrug thereof. In an exemplary compound of formula (I), R1 is R2 is H, R3 is —N(CH3)2, and R4 is H.

Abstract: A low-profile and small-size valve to a shut off a flow of fluid in a pipeline includes a frame, a tube, a moving part, a lever, an elastic part, a latch, and a trigger. The tube is movable with the moving part. The lever is rotatable around an axis. The elastic part can push the lever to rotate after the trigger pushes the buckle away from the lever to unlatch the lever and allow rotation. During the rotation of the lever, the lever pulls on the moving part, and the moving part pulls on the tube together to disconnect the tube from the pipe. The valve improves the convenience and efficiency of shutting off a flow of fluid. A pipeline and an immersion cooling system is also disclosed.

Abstract: A reciprocating glue dispenser dispensing switch includes a switching device main body, a needle holding base, a sliding wear-resistant plate, and a driving device. The switching device main body is equipped with a double liquid inlet, the needle holding base is equipped with a mixed glue outlet, the sliding wear-resistant plate is installed between the switching device main body and the needle holding base, and the sliding wear-resistant plate is equipped with a sliding wear-resistant plate opening. The driving device is utilized to move the sliding wear-resistant plate. A mixed double-liquid glue passes through the double liquid inlet, the sliding wear-resistant plate opening and the glue outlet to dispense a mixed double-liquid glue while the double liquid inlet, the sliding wear-resistant plate opening and the glue outlet are overlapped. In addition, a double liquid dispensing equipment is also disclosed herein.

Abstract: A semiconductor package assembly and an electronic device are provided. The semiconductor package assembly includes a base, a system-on-chip (SOC) package, a memory package and a silicon capacitor die. The base has a first surface and a second surface opposite the first surface. The SOC package is disposed on the first surface of the base and includes a SOC die having pads and a redistribution layer (RDL) structure. The RDL structure is electrically connected to the SOC die by the pads. The memory package is stacked on the SOC package and includes a memory package substrate and a memory die. The memory package substrate has a top surface and a bottom surface. The memory die is electrically connected to the memory package substrate. The silicon capacitor die is disposed on and electrically connected to the second surface of the base.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a sacrificial gate structure over an active region. A first spacer layer is formed along sidewalls and a top surface of the sacrificial gate structure. A first protection layer is formed over the first spacer layer. A second spacer layer is formed over the first protection layer. A third spacer layer is formed over the second spacer layer. The sacrificial gate structure is replaced with a replacement gate structure. The second spacer layer is removed to form an air gap between the first protection layer and the third spacer layer.

Abstract: The present application discloses a motor controller, a motor control method and a computer program product for vehicle assist control. An assist torque command for a motor device to perform vehicle assist control is generated according to an execution command of a vehicle assist determination unit and a rotor position signal and a rotor speed signal of a motor device. An original position signal of the motor device and the rotor position signal are calculated, and a position ratio calculation is performed to generate a front-order torque command. A torque damping command is generated according to the speed ratio calculation based on the rotor speed signal, and is calculated with the front-order torque command to generate an assist torque command. Thus, position information of the rotor of the motor device can be directly used in the calculation and speed information is at the same time used for an assist calculation, thereby preventing an error and solving the issue of sliding during parking.

Abstract: Direct memory access data path for RAID storage is disclosed, including: receiving, at a Redundant Array of Independent Disks (RAID) controller, a request to write data to be distributed among a plurality of storage devices; computing parity information based at least in part on the data associated with the request; causing the parity information to be stored on a first subset of the plurality of storage devices; and causing the data associated with the request to be stored on a second subset of the plurality of storage devices, wherein the plurality of storage devices is configured to obtain the data associated with the request directly from a memory that is remote to the RAID controller, and wherein the data associated with the request does not pass through the RAID controller.

Abstract: A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.