Abstract: A method includes forming a first dummy gate and a second dummy gate over a fin that protrudes above a substrate; replacing the first dummy gate and the second dummy gate with a first metal gate and a second metal gate, respectively; forming a dielectric cut pattern between the first and the second metal gates, the dielectric cut pattern extending further from the substrate than the first and the second metal gates; forming a patterned mask layer over the first metal gate, the second metal gate, and the dielectric cut pattern, an opening in the patterned mask layer exposing a portion of the first metal gate, a portion of the second metal gate, and a portion of the dielectric cut pattern underlying the opening; filling the opening with a first electrically conductive material; and recessing the first electrically conductive material below an upper surface of the dielectric cut pattern.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack wrapping around a first upper portion of the fin. The semiconductor device structure includes a first stressor and a second stressor respectively over opposite first sides of the fin. The semiconductor device structure includes a spacer structure between the gate stack and the first stressor. The semiconductor device structure includes a first spacer layer covering a sidewall of the gate stack, the spacer structure, and the first stressor. The semiconductor device structure includes a dielectric layer over the first spacer layer. The semiconductor device structure includes an etch stop layer between the first spacer layer and the dielectric layer. The semiconductor device structure includes a seal structure between the second upper portion and the third upper portion.

Abstract: A method of forming a semiconductor device includes providing a device having a gate stack including a metal gate layer. The device further includes a spacer layer disposed on a sidewall of the gate stack and a source/drain feature adjacent to the gate stack. The method further includes performing a first etch-back process to the metal gate layer to form an etched-back metal gate layer. In some embodiments, the method includes depositing a metal layer over the etched-back metal gate layer. In some cases, a semiconductor layer is formed over both the metal layer and the spacer layer to provide a T-shaped helmet layer over the gate stack and the spacer layer.

Abstract: A method for repairing a white defect of a LCD panel includes providing a substrate, the substrate defining pixel areas which themselves comprise a base, a first metal layer, a first insulating layer, a semi-conductor layer, an ohmic contact layer, a source electrode, a drain electrode, and a second insulating layer; forming a through hole by laser in the second insulating layer, the through hole extending through the second insulating layer and separating the drain electrode into two spaced parts; forming a third insulating. layer to cover the first conductive layers, the second insulating layer and the though hole and forming a second conductive layer by laser on the third insulating layer to couple the first conductive layer to the second conductive layer.

Abstract: A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

Abstract: A light-emitting diode (LED) assembly comprises a plurality of LED cells and a driving circuit. Each of the LED cells includes an LED and a transistor. The LED includes first and second LED layers and an LED electrode. The first LED layer includes a III-V compound semiconductor. The second LED layer is over the first LED layer. The LED electrode is over the second LED layer. The first LED layer is free of an LED electrode. The transistor includes a drain region connected to the first LED layer. The driving circuit is configured to drive the LED cells.

Abstract: A pipe clamping apparatus of a pipe processing machine includes first and second slide rails on inner and outer end surfaces of the clamping apparatus, a turntable with slot openings, first and second rotating rings with a gear rack, plural linkage modules and plural clamping components. A rod of the pneumatic cylinder is fixed to the inner end surface; the pneumatic cylinder has a rack engaged with the gear rack and is fixed to a block having an oblique slot and a rail slot; and the clamping component has a claw, a slider passing through the slot opening and oblique slot, and a rail slot. Air drives the pneumatic cylinder to move, while the rack is driving the first or second rotating rings to move the opposite pneumatic cylinder in an opposite direction, and the slider slides in the oblique slot to drive the claw to clamp the pipe.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a gate stack wrapping around a first upper portion of the fin. The semiconductor device structure includes a first stressor and a second stressor respectively over opposite first sides of the fin. The semiconductor device structure includes a spacer structure between the gate stack and the first stressor. The semiconductor device structure includes a first spacer layer covering a sidewall of the gate stack, the spacer structure, and the first stressor. The semiconductor device structure includes a dielectric layer over the first spacer layer. The semiconductor device structure includes an etch stop layer between the first spacer layer and the dielectric layer. The semiconductor device structure includes a seal structure between the second upper portion and the third upper portion.

Abstract: A method for repairing a white defect of a LCD panel includes providing a substrate, the substrate defining pixel areas which themselves comprise a base, a first metal layer, a first insulating layer, a semi-conductor layer, an ohmic contact layer, a source electrode, a drain electrode, and a second insulating layer; forming a through hole by laser in the second insulating layer, the through hole extending through the second insulating layer and separating the drain electrode into two spaced parts; forming a third insulating layer to cover the first conductive layers, the second insulating layer and the though hole and forming a second conductive layer by laser on the third insulating layer to couple the first conductive layer to the second conductive layer.

Abstract: A pipe end clamping apparatus includes a first pneumatic cylinder, a second pneumatic cylinder and a clamping component. The first pneumatic cylinder includes a first piston in the first cylinder body, first and second air chambers corresponding to the first and second air inlets respectively, and a first plunger rod installed to the first piston. The second pneumatic cylinder includes a second piston in the second cylinder body, third and fourth air chambers corresponding to the third and fourth air inlets respectively, and, a second plunger rod installed to the second piston. The clamping component has a clamping seat and a clamping component in the housing and pumps air into different air inlets of the first or second pneumatic cylinder to control the first or second piston to displace in the first and second cylinder bodies, so as to control clamping the clamping component or loosening the pipe.

Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.

Abstract: A gate driving circuit which allows narrower framing of a display screen includes cascade-connected gate driving modules. Each gate driving module is electrically coupled to first and second scan lines and outputs scanning signals to the first and the second scan lines in a time-division manner in response to first and second clock signals. Each gate driving module includes an input transistor, and first and second output transistors. The input transistor receives a trigger signal for activating the gate driving module. The input transistor controls the first output transistor to output first scanning signal to first scan line in response to the first clock signal and controls the second output transistor to output second scanning signal to the second scan line in response to the second clock signal.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes a gate stack formed across the first fin structure and a first source/drain structure formed over the first fin structure adjacent to the gate stack. The semiconductor device structure further includes a contact structure formed over the first source/drain structure and a dielectric structure formed through the contact structure. In addition, a bottom surface of the contact structure is wider than a top surface of the contact structure.

Abstract: A lamp has a base, a transmission mechanism, and multiple light-emitting assemblies. The transmission mechanism is mounted on the base and is rotatable around a transmission axis. The light-emitting assemblies is mounted on the base and is connected to the transmission mechanism. Each light-emitting assembly is rotatable around a rotation axis which is nonparallel with the transmission axis. The light-emitting assemblies can be rotated through driving the transmission mechanism, so as to adjust lighting effects of the light-emitting assemblies and an appearance of the lamp. Not only the lighting effects can be adjusted according to a user's need, but also the appearance of the lamp can be changed to adapt the lamp to the environment where the lamp is disposed, such that the lamp of the present invention can be widely used.

Abstract: A semiconductor device structure includes a gate stack and an adjacent source/drain contact structure formed over a semiconductor substrate. The semiconductor device structure includes a first gate spacer structure extending from a sidewall of the gate stack to a sidewall of the source/drain contact structure, and a second gate spacer structure formed over the first gate spacer structure and between the gate stack and the source/drain contact structure. The second gate spacer structure includes first and second gate spacer layers adjacent to the sidewall of the gate stack and the sidewall of the source/drain contact structure, respectively, and a third gate spacer layer separating the first gate spacer layer from the second gate spacer layer, so that an air gap is sealed by the first, second, and the third gate spacer layers and the first gate spacer structure.

Abstract: A semiconductor structure includes a first epitaxial source/drain (S/D) feature disposed over a first semiconductor fin, a second epitaxial S/D feature disposed over a second semiconductor fin and adjacent to the first epitaxial S/D feature, an interlayer dielectric (ILD) layer disposed over the first and the second epitaxial S/D features, a dielectric feature disposed In the ILD layer and contacting the second epitaxial S/D feature, and a conductive feature disposed in the ILD layer and contacting the first epitaxial S/D feature, where a portion of the conductive feature extends to contact the dielectric feature.

Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.

Abstract: A semiconductor device structure includes a gate stack and an adjacent source/drain contact structure formed over a semiconductor substrate. The semiconductor device structure includes a first gate spacer structure extending from a sidewall of the gate stack to a sidewall of the source/drain contact structure, and a second gate spacer structure formed over the first gate spacer structure and between the gate stack and the source/drain contact structure. The second gate spacer structure includes first and second gate spacer layers adjacent to the sidewall of the gate stack and the sidewall of the source/drain contact structure, respectively, and a third gate spacer layer separating the first gate spacer layer from the second gate spacer layer, so that an air gap is sealed by the first, second, and the third gate spacer layers and the first gate spacer structure.

Abstract: A method includes forming a first dummy gate and a second dummy gate over a fin that protrudes above a substrate; replacing the first dummy gate and the second dummy gate with a first metal gate and a second metal gate, respectively; forming a dielectric cut pattern between the first and the second metal gates, the dielectric cut pattern extending further from the substrate than the first and the second metal gates; forming a patterned mask layer over the first metal gate, the second metal gate, and the dielectric cut pattern, an opening in the patterned mask layer exposing a portion of the first metal gate, a portion of the second metal gate, and a portion of the dielectric cut pattern underlying the opening; filling the opening with a first electrically conductive material; and recessing the first electrically conductive material below an upper surface of the dielectric cut pattern.